BCD APD260VGTR-E1 Schottky barrier rectifier Datasheet

Preliminary Datasheet
SCHOTTKY BARRIER RECTIFIERS
APD260
Features
·
·
·
·
Applications
Low Forward Voltage Drop
Very Small Conduction Losses
High Surge Capability
Surge Overload Rating up to 50A Peak Value
·
·
·
·
Low Voltage High Frequency Inverters
DC-DC Converters
Free Wheeling
Polarity Protection
DO-41
DO-15
Figure 1. Package Types of APD260
Pin Configuration
VD/VG Package
(DO-41/DO-15)
Cathod
Anode
Figure 2. Pin Configuration of APD260
Jun. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
1
Preliminary Datasheet
SCHOTTKY BARRIER RECTIFIERS
APD260
Ordering Information
APD260
-
Circuit Type
E1: Lead Free
Package
TR: Ammo
Blank: Bulk
VD: DO-41
VG: DO-15
Package
DO-41
DO-15
Part Number
Marking ID
Packing Type
APD260VD-E1
D260VD
Bulk
APD260VDTR-E1
D260VD
Ammo
APD260VG-E1
D260VG
Bulk
APD260VGTR-E1
D260VG
Ammo
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Absolute Maximum Ratings (TA=25oC, unless otherwise noted) (Note 1)
Parameter
Symbol
Value
Unit
VRRM
60
V
Maximum DC Blocking Voltage
VDC
60
V
Maximum RMS Voltage
VRMS
42
V
Average Rectified Forward Current
0.375 " (9.5mm) Lead Length (See Figure 3)
IF(AV)
2.0
A
Non-Repetitive Peak Forward Surge Current
8.3 ms Single Half Sine-Wave on Rated Load
IFSM
50
A
TJ
-65 to 125
oC
TSTG
-65 to 150
oC
Maximum Repetitive Peak Reverse Voltage
Operating Junction Temperature Range
Storage Temperature Range
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Jun. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
2
Preliminary Datasheet
SCHOTTKY BARRIER RECTIFIERS
APD260
Thermal Characteristics (TA=25oC, unless otherwise noted)
Parameter
Typical Thermal Resistance (Note 2)
Symbol
Values
RθJA
52
RθJL
14
Unit
oC/W
Note 2: Thermal resistance from junction to lead, PCB mounted, 0.375" (9.5mm) lead length.
Electrical Characteristics (TA=25oC, unless otherwise noted)
Parameter
Forward Voltage @ IF=2.0A
Reverse Current @ Rated VR (Note 3)
Symbol
Values
Unit
VF
0.68
V
TA=25oC
0.5
IR
TA=100oC
mA
10
Note 3: Pulse Test: 300 µS pulse width, 1.0% duty cycle.
Typical Performance Characteristics (TA=25oC, unless otherwise noted)
Instantaneous Forward Current (A)
Average Forward Current (A)
2.5
2.0
1.5
1.0
Resistive or Inductive Load
0.375''(9.5mm) Lead length
0.5
0.0
10
1
o
0.01
0.0
0
25
50
75
100
125
T J=25 C
0.1
o
T J=125 C
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
150
o
Lead Temperature ( C)
Instantaneous Forward Voltage (V)
Figure 3. Forward Current Derating Curve
Figure 4. Typical Instantaneous Forward Characteristics
Jun. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Preliminary Datasheet
SCHOTTKY BARRIER RECTIFIERS
APD260
Typical Performance Characteristics (Continued)
5
10
50
Instantanous Reverse Current (µA)
Peak Forward Surge Current (A)
45
40
35
30
25
20
TJ=TJ(max)
Single Half Sine-Wave
15
10
4
10
3
10
o
TJ=25 C
2
10
o
TJ=125 C
1
10
0
10
10
100
Number of Cycles at 60Hz
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Maximum Non-Repetitive
Figure 6. Typical Reverse Characteristics
Peak Forward Surge Current
Junction Capacitance (pF)
o
TJ=25 C
f=1.0MHz
VSIG=50mVp-p
100
10
0.1
1
10
100
Reverse Voltage (V)
Figure 7. Typical Junction Capacitance
Jun. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
4
Preliminary Datasheet
SCHOTTKY BARRIER RECTIFIERS
APD260
Mechanical Dimensions
DO-41
Unit: mm(inch)
0.700(0.028)
0.900(0.035)
25.400(1.000) MIN
DIA.
4.200(0.165)
5.200(0.205)
2.000(0.080)
2.700(0.107)
DIA.
25.400(1.000) MIN
Jun. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Preliminary Datasheet
SCHOTTKY BARRIER RECTIFIERS
APD260
Mechanical Dimensions (Continued)
DO-15
Unit: mm(inch)
0.700(0.028)
0.900(0.034)
25.400(1.000) MIN
DIA.
5.800(0.230)
7.600(0.300)
2.600(0.104)
3.600(0.140)
DIA.
25.400(1.000) MIN
Jun. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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