Anpec APM2307AC-TR P-channel enhancement mode mosfet Datasheet

APM2307
P-Channel Enhancement Mode MOSFET
Features
Pin Description
D
• -30V/-3A , RDS(ON)=100mΩ(typ.) @ VGS=-10V
RDS(ON)=140mΩ(typ.) @ VGS=-4.5V
•
Super High Dense Cell Design for Extremely
Low RDS(ON)
•
•
Reliable and Rugged
SOT-23 Package
G
Top View of SOT-23
Applications
•
S
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
A P M 23 07
Package Code
A : S O T -23
O peration Junction T em p. R ange
C : -55 to 1 50° C
H andling C ode
T R : T ape & R eel
H andling C ode
T em p. R an ge
Package Code
A P M 2307 A :
X - D ate C ode
M 07X
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
-30
VGSS
Gate-Source Voltage
±20
ID*
Maximum Drain Current – Continuous
-3
IDM
Maximum Drain Current – Pulsed
-12
Unit
V
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003
1
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APM2307
Absolute Maximum Ratings Cont.
Symbol
PD
Parameter
Maximum Power Dissipation
TJ
(TA = 25°C unless otherwise noted)
Rating
TA=25°C
1.25
TA=100°C
0.5
Maximum Junction Temperature
TSTG
Storage Temperature Range
RθjA
Thermal Resistance – Junction to Ambient
Electrical Characteristics
Symbol
Parameter
Unit
W
150
°C
-55 to 150
°C
100
°C/W
(TA = 25°C unless otherwise noted)
Test Condition
APM2307
Typ.
Max.
Min.
Unit
Static
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
BVDSS
IDSS
VGS(th)
IGSS
RDS(ON)a
VSDa
VGS=0V , IDS=-250µA
-30
V
VDS=-24V , VGS=0V
VDS=VGS , IDS=-250µA
VGS=±20V , VDS=0V
-1
-1
µA
-3
±100
V
nA
Drain-Source On-state
VGS=-10V , IDS=-3A
100
120
Resistance
VGS=-4.5V , IDS=-2.5A
140
170
Diode Forward Voltage
ISD=-1.25A , VGS=0V
0.6
1.3
mΩ
V
b
Dynamic
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(ON)
Tr
Turn-on Delay Time
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
VDS=-15V , IDS=-3A
VGS=-10V
8
13
1.9
nC
1.1
VDD=-15V , IDS=-1A ,
VGEN=-10V , RG=6Ω
RL=15Ω
Tf
Turn-off Fall Time
Ciss
Input Capacitance
Coss
Crss
Output Capacitance
VDS=-25V
Reverse Transfer Capacitance Frequency=1.0MHz
VGS=0V
10
8
20
20
25
50
5
15
ns
550
120
75
pF
Notes
a
b
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
: Guaranteed by design, not subject to production testing
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003
2
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APM2307
Typical Characteristics
Output Characteristics
Transfer Characteristics
10
10
-VGS=5,6,7,8,9,10V
-ID-Drain Current (A)
-ID-Drain Current (A)
8
-V GS=4V
6
4
-V GS=3V
2
0
0
2
4
6
8
6
4
TJ=125°C
2
8
0
10
TJ=-55°C
TJ=25°C
0
1
-VDS - Drain-to-Source Voltage (V)
2
3
4
5
-VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
On-Resistance vs. Drain Current
0.30
1.50
1.25
RDS(ON)-On-Resistance (Ω)
-VGS(th)-Threshold Voltage (V)
(Normalized)
-IDS=250uA
1.00
0.75
0.50
0.25
0.00
-50
-25
0
25
50
75
0.20
-VGS=4.5V
0.15
-VGS=10V
0.10
0.05
0.00
100 125 150
Tj - Junction Temperature (°C)
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003
0.25
0
1
2
3
4
5
6
7
8
-ID - Drain Current (A)
3
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APM2307
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
2.00
-ID=3A
RDS(ON)-On-Resistance (Ω)
(Normalized)
RDS(ON)-On-Resistance (Ω)
0.5
On-Resistance vs. Junction Temperature
0.4
0.3
0.2
0.1
1.75
-V GS=10V
-ID=3A
1.50
1.25
1.00
0.75
0.50
0.25
0.0
0
2
4
6
8
0.00
-50
10
-VGS - Gate-to-Source Voltage (V)
-25
50
75
100 125 150
Capacitance
800
10
-V DS=10V
9 -ID=3A
700
8
7
Capacitance (pF)
-VGS-Gate-Source Voltage (V)
25
TJ - Junction Temperature (°C)
Gate Charge
6
5
4
3
2
600
Ciss
500
400
300
200
Coss
Crss
100
1
0
0
0
1
2
3
4
5
6
7
0
8
QG - Gate Charge (nC)
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003
0
5
10
15
20
25
30
-VDS - Drain-to-Source Voltage (V)
4
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APM2307
Typical Characteristics
Source-Drain Diode Forward Voltage
Single Pulse Power
12
10
Power (W)
-IS-Source Current (A)
10
1
TJ=150°C
TJ=25°C
8
6
4
2
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.01
1.4
0.1
-VSD -Source-to-Drain Voltage (V)
1
10
100
500
Time (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
D=0.02
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=100°C/W
3.TJM-TA=PDMZthJA
SINGLE PULSE
0.01
1E-4
1E-3
0.01
0.1
1
10
100
500
Square Wave Pulse Duration (sec)
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003
5
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APM2307
Packaging Information
SOT-23
D
B
3
E
H
2
1
S
e
A
L
A1
Dim
C
M illim et er s
Inc he s
A
M in.
1. 0 0
M ax.
1. 3 0
M in.
0. 0 39
M ax.
0. 0 51
A1
0. 0 0
0. 1 0
0. 0 00
0. 0 04
B
0. 3 5
0. 5 1
0. 0 14
0. 0 20
C
0. 1 0
0. 2 5
0. 0 04
0. 0 10
D
2. 7 0
3. 1 0
0. 1 06
0. 1 22
E
1. 4 0
1. 8 0
0. 0 55
0. 0 71
3. 0 0
0. 0 94
e
1. 9 0 B SC
H
2. 4 0
L
0. 3 7
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003
0. 0 75 B SC
0. 11 8
0. 0 01 5
6
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APM2307
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
temperature
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
183°C
Pre-heat temperature
Time
Classification Reflow Profiles
Average ramp-up rate(183°C to Peak)
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak
temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature
Convection or IR/ Convection
VPR
3°C/second max.
120 seconds max.
60 ~ 150 seconds
10 ~ 20 seconds
10 °C /second max.
220 +5/-0°C or 235 +5/-0°C
6 °C /second max.
6 minutes max.
215~ 219°C or 235 +5/-0°C
10 °C /second max.
60 seconds
Package Reflow Conditions
pkg. thickness ≥ 2.5mm
and all bags
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003
7
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C
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APM2307
Reliability test program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
D
P
Po
E
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
B
T1
Application
SOT-23
A
B
178±1
72 ± 1.0
F
D
D1
Po
3.5 ± 0.05
1.5 +0.1
1.5 +0.1
4.0 ± 0.1
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003
C
J
13.0 + 0.2 2.5 ± 0.15
8
T1
T2
P
E
1.5± 0.3
W
8.0+ 0.3
- 0.3
8.4 ± 2
4 ± 0.1
1.75± 0.1
P1
Ao
Bo
Ko
t
3.2± 0.1
1.4± 0.1
0.2±0.03
2.0 ± 0.1 3.15 ± 0.1
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APM2307
Cover Tape Dimensions
Application
SOT- 23
Carrier Width
8
Cover Tape Width
5.3
Devices Per Reel
3000
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003
9
www.anpec.com.tw
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