APM2318A N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/3A , D RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=40mΩ(typ.) @ VGS=4.5V RDS(ON)=60mΩ(typ.) @ VGS=2.5V • • • G S Super High Dense Cell Design Top View of SOT-23 Reliable and Rugged Lead Free Available (RoHS Compliant) D Applications • G Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. S N-Channel MOSFET Ordering and Marking Information Package Code A : SOT-23 Operating Junction Tem p. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM2318 Lead Free Code Handling Code Tem p. Range Package Code APM2318 A : M18X XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1 www.anpec.com.tw APM2318A Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±12 ID* Continuous Drain Current IDM* 300µs Pulsed Drain Current IS* Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage Temperature Range PD* Maximum Power Dissipation RθJA* Unit V 3 VGS=10V A 12 A 1 150 °C -55 to 150 TA=25°C 0.83 TA=100°C 0.3 Thermal Resistance-Junction to Ambient W °C/W 150 Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) VSD a a APM2318A Min. Typ. 30 1 TJ=85°C VDS=VGS, IDS=250µA Gate Leakage Current VGS=±12V, VDS=0V 30 0.5 0.7 V ±100 nA 35 50 Drain-Source On-state Resistance VGS=4.5V, IDS=2A 40 55 VGS=2.5V, IDS=1.5A 60 80 ISD=0.5A, VGS=0V 0.7 1.3 12 16 Gate Charge Characteristics Qg Total Gate Charge µA 1 VGS=10V, IDS=3A Diode Forward Voltage Unit V VDS=24V, VGS=0V Gate Threshold Voltage Max. mΩ V b Qgs Gate-Source Charge Qgd Gate-Drain Charge Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 VDS=15V, VGS=10V, IDS=3A 0.8 nC 0.8 2 www.anpec.com.tw APM2318A Electrical Characteristics (Cont.) Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM2318A Min. Typ. Max. Unit b Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf Notes: VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω Turn-off Fall Time Ω 1.5 320 pF 25 15 11 22 17 32 37 68 20 38 ns a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 3 www.anpec.com.tw APM2318A Typical Characteristics Drain Current Power Dissipation 1.0 3.5 0.9 3.0 ID - Drain Current (A) 0.8 Ptot - Power (W) 0.7 0.6 0.5 0.4 0.3 2.5 2.0 1.5 1.0 0.2 0.5 0.1 o TA=25 C,VG=10V o 0.0 TA=25 C 0 20 40 60 0.0 80 100 120 140 160 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance on )L im it 10 s( 300µs Rd ID - Drain Current (A) 20 Tj - Junction Temperature (°C) 50 1ms 1 10ms 100ms 0.1 1s DC o TA=25 C 0.01 0.01 0 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 2 Mounted on 1in pad o RθJA : 150 C/W Single Pulse 0.01 1E-4 1E-3 0.01 100 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 2 0.1 10 100 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM2318A Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 12 100 VGS= 3,4,5,6,7,8,9,10V RDS(ON) - On - Resistance (mΩ) ID - Drain Current (A) 90 2V 10 8 6 4 1.5V 2 80 70 VGS=2.5V 60 50 VGS=4.5V 40 VGS=10V 30 20 10 0 0 0 1 2 3 4 5 0 2 4 6 8 10 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 1.8 12 12 IDS =250µA 1.6 Normalized Threshold Voltage ID - Drain Current (A) 10 8 6 o Tj=125 C 4 o Tj=25 C 2 o Tj=-55 C 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 -50 -25 3.0 VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM2318A Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 1.8 10 VGS = 10V IDS = 3A o 1.4 Tj=150 C IS - Source Current (A) Normalized On Resistance 1.6 1.2 1.0 0.8 0.6 0.4 o Tj=25 C 1 0.2 o 0.0 -50 -25 RON@Tj=25 C: 35mΩ 0 25 50 75 0.1 0.0 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance Gate Charge 10 500 VDS=15V Frequency=1MHz VGS - Gate - source Voltage (V) IDS = 3A C - Capacitance (pF) 400 Ciss 300 200 100 Crss 0 Coss 8 6 4 2 0 0 5 10 15 20 25 30 2 4 6 8 10 12 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 0 6 www.anpec.com.tw APM2318A Packaging Information SOT-23 D B 3 E H 2 1 e A L A1 Dim A A1 B C D E e H L Millimeters Min. 1.00 0.00 0.35 0.10 2.70 1.40 Inches Max. 1.30 0.10 0.51 0.25 3.10 1.80 Min. Max. 0.039 0.051 0.000 0.004 0.014 0.020 0.004 0.010 0.106 0.122 0.055 0.071 0.075/0.083 BSC. 0.094 0.118 0.015 1.90/2.1 BSC. 2.40 0.37 Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 C 3.00 7 www.anpec.com.tw APM2318A Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP C ritical Zone T L to T P T e m p e ra tu re R am p-up TL tL T sm ax T sm in R am p-down ts Preheat 25 t 25 °C to Peak T im e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 8 www.anpec.com.tw APM2318A Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Tem peratures 3 3 Package Thickness Volum e m m Volum e m m <350 ≥350 <2.5 m m 240 +0/-5°C 225 +0/-5°C ≥2.5 m m 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Tem peratures 3 3 3 Package Thickness Volum e mm Volum e mm Volum e mm <350 350-2000 >2000 <1.6 m m 260 +0°C* 260 +0°C* 260 +0°C* 1.6 m m – 2.5 m m 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 m m 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0°C. For exam ple 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E P Po D P1 Bo F W Ao Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 D1 9 Ko www.anpec.com.tw APM2318A Carrier Tape & Reel Dimensions T2 J C A B T1 Application SOT-23 A B C J 178±1 60 ± 1.0 12.0 F D D1 Po 3.5 ± 0.05 1.5 +0.1 £p0.1MIN 4.0 T1 P E 1.4 W 8.0+ 0.3 - 0.3 4.0 1.75 P1 Ao Bo Ko t 2.0 ± 0.05 3.1 3.0 1.3 0.2±0.03 2.5 ± 0.15 9.0 ± 0.5 T2 (mm) Cover Tape Dimensions Application SOT- 23 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 10 www.anpec.com.tw