APM2322A N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/1.5A , D RDS(ON)=195mΩ(typ.) @ VGS=4.5V RDS(ON)=295mΩ(typ.) @ VGS=2.5V • • • G Super High Dense Cell Design S Reliable and Rugged Top View of SOT-23 Lead Free Available (RoHS Compliant) D Applications • Power Management in Notebook Computer, G Portable Equipment and Battery Powered Systems. S N-Channel MOSFET Ordering and Marking Information Package Code A : SO T-23 Operating Junction Tem p. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : O riginal Device APM 2322 Lead Free Code Handling Code Tem p. Range Package Code APM 2322 A : M22X XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1 www.anpec.com.tw APM2322A Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±8 ID* Continuous Drain Current IDM* 300µs Pulsed Drain Current IS* Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage Temperature Range PD* Maximum Power Dissipation RθJA* Unit V 1.5 VGS=4.5V A 6 A 1 150 °C -55 to 150 TA=25°C 0.83 TA=100°C 0.3 Thermal Resistance-Junction to Ambient W °C/W 150 Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) VSD a a Gate Leakage Current VGS=±8V, VDS=0V Gate Charge Characteristics Qg Total Gate Charge Typ. Max. 20 1 30 0.5 Unit V TJ=85°C VDS=VGS, IDS=250µA Diode Forward Voltage Min. VDS=16V, VGS=0V Gate Threshold Voltage Drain-Source On-state Resistance APM2322A 0.7 µA 1 V ±100 nA VGS=4.5V, IDS=1.5A 195 260 VGS=2.5V, IDS=0.8A 295 350 ISD=0.5A, VGS=0V 0.8 1.3 1.4 1.8 mΩ V b Qgs Gate-Source Charge Qgd Gate-Drain Charge Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 VDS=15V, VGS=10V, IDS=1.5A 0.2 nC 0.3 2 www.anpec.com.tw APM2322A Electrical Characteristics (Cont.) Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM2322A Min. Typ. Max. Unit b Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf Notes: VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=10V, RL=10Ω, IDS=1A, VGEN=4.5V, RG=6Ω Turn-off Fall Time Ω 6.4 150 pF 45 30 6 15 5 11 12 24 6 15 ns a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 3 www.anpec.com.tw APM2322A Typical Characteristics Drain Current Power Dissipation 1.0 1.8 0.9 1.5 ID - Drain Current (A) 0.8 Ptot - Power (W) 0.7 0.6 0.5 0.4 0.3 0.2 1.2 0.9 0.6 0.3 0.1 o TA=25 C,VG=4.5V o 0.0 TA=25 C 0 20 40 60 0.0 80 100 120 140 160 60 80 100 120 140 160 Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance it im )L on s( 300µs Rd ID - Drain Current (A) 40 Tj - Junction Temperature (°C) 10 1ms 10ms 100ms 0.1 1s DC o TA=25 C 0.01 0.01 20 Tj - Junction Temperature (°C) 20 1 0 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 2 Single Pulse 0.01 1E-4 100 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 2 1E-3 0.01 Mounted on 1in pad o RθJA : 150 C/W 0.1 1 10 30 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM2322A Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 6 400 VGS= 3,4,5,6,7,8,9,10V RDS(ON) - On - Resistance (mΩ) ID - Drain Current (A) 5 4 3 2 2V 1 0 0 1 2 3 4 350 250 VGS=4.5V 200 150 100 5 VGS=2.5V 300 0 1 2 3 4 5 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 6 6 1.6 IDS=250µA Normalized Threshold Voltage ID - Drain Current (A) 5 o Tj=-55 C 4 o 3 Tj=125 C 2 o Tj=25 C 1 0 0 1 2 3 1.2 1.0 0.8 0.6 0.4 -50 -25 4 VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1.4 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM2322A Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 6 1.75 VGS = 4.5V 1.50 o IS - Source Current (A) Normalized On Resistance IDS = 1.5A 1.25 1.00 0.75 Tj=150 C 1 o Tj=25 C 0.1 o RON@Tj=25 C: 195mΩ 0.50 -50 -25 0 25 50 75 0.01 0.0 100 125 150 1.2 1.6 VSD - Source - Drain Voltage (V) Capacitance Gate Charge 5 Frequency=1MHZ VDS=10V IDS= 1.5A VGS - Gate - source Voltage (V) 180 Ciss C - Capacitance (pF) 0.8 Tj - Junction Temperature (°C) 210 150 120 90 60 Coss Crss 30 0 0.4 0 4 8 12 16 3 2 1 0 0.0 20 0.3 0.6 0.9 1.2 1.5 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 4 6 www.anpec.com.tw APM2322A Packaging Information SOT-23 D B 3 E H 2 1 e A L A1 Dim A A1 B C D E e H L Millimeters Min. 1.00 0.00 0.35 0.10 2.70 1.40 Inches Max. 1.30 0.10 0.51 0.25 3.10 1.80 Min. Max. 0.039 0.051 0.000 0.004 0.014 0.020 0.004 0.010 0.106 0.122 0.055 0.071 0.075/0.083 BSC. 0.094 0.118 0.015 1.90/2.1 BSC. 2.40 0.37 Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 C 3.00 7 www.anpec.com.tw APM2322A Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP C ritical Zone T L to T P T e m p e ra tu re R am p-up TL tL T sm ax T sm in R am p-down ts Preheat 25 t 25 °C to Peak T im e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 8 www.anpec.com.tw APM2322A Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Tem peratures 3 3 Package Thickness Volum e m m Volum e m m <350 ≥350 <2.5 m m 240 +0/-5°C 225 +0/-5°C ≥2.5 m m 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Tem peratures 3 3 3 Package Thickness Volum e mm Volum e mm Volum e mm <350 350-2000 >2000 <1.6 m m 260 +0°C* 260 +0°C* 260 +0°C* 1.6 m m – 2.5 m m 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 m m 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0°C. For exam ple 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E P Po D P1 Bo F W Ao Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 D1 9 Ko www.anpec.com.tw APM2322A Carrier Tape & Reel Dimensions T2 J C A B T1 Application SOT-23 A B C J 178±1 60 ± 1.0 12.0 F D D1 Po 3.5 ± 0.05 1.5 +0.1 £p0.1MIN 4.0 T1 P E 1.4 W 8.0+ 0.3 - 0.3 4.0 1.75 P1 Ao Bo Ko t 2.0 ± 0.05 3.1 3.0 1.3 0.2±0.03 2.5 ± 0.15 9.0 ± 0.5 T2 (mm) Cover Tape Dimensions Application SOT- 23 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 10 www.anpec.com.tw