APM2700C Dual Enhancement Mode MOSFET (N and P-Channel) Pin Description Features • N-Channel 20V/1.8A, RDS(ON)=170mΩ(typ.) @ VGS=4.5V RDS(ON)=270mΩ(typ.) @ VGS=2.5V • P-Channel Top View of SOT-26 -20V/-1.2A, RDS(ON)=360mΩ(typ.) @ VGS=-4.5V RDS(ON)=530mΩ(typ.) @ VGS=-2.5V • • • (2) S2 (6) D1 Super High Dense Cell Design Reliable and Rugged (1) G1 Lead Free Available (RoHS Compliant) (3) G2 Applications • S1 (5) Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems N-Channel MOSFET D2 (4) P-Channel MOSFET Ordering and Marking Information Package Code C : SO T-26 O perating Junction Tem p. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : O riginal Device APM2700C Lead Free Code Handling Code Tem p. Range Package Code APM2700C C : M70X XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1 www.anpec.com.tw APM2700C Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter N Channel P Channel VDSS Drain-Source Voltage 20 -20 VGSS Gate-Source Voltage ±8 ±8 1.8 -1.2 6 -5 1 -1 ID* Continuous Drain Current IDM* 300µs Pulsed Drain Current IS* Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage Temperature Range PD* Power Dissipation RθJA* VGS=±4.5V Unit V A A 150 °C -55 to 150 TA=25°C 0.83 TA=100°C 0.3 Thermal Resistance-Junction to Ambient W °C/W 150 Note: *Surface Mounted on 1in2 pad area, t ≤ 10sec. Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) APM2700C Test Condition Min. Typ. Max. Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=250µA N-Ch 20 VGS=0V, IDS=-250µA P-Ch -20 VDS=16V, VGS=0V Zero Gate Voltage Drain Current IDSS TJ=85°C VDS=-16V, VGS=0V TJ=85°C VGS(th) Gate Threshold Voltage IGSS RDS(ON) Gate Leakage Current a Drain-Source On-State Resistance Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 V 1 N-Ch 30 -1 P-Ch µA -30 VDS=VGS, IDS=250µA N-Ch 0.45 0.6 1.2 VDS=VGS, IDS=-250µA P-Ch -0.45 -0.6 -1.2 VGS=±8V, VDS=0V N-Ch ±2 µA VGS=±8V, VDS=0V P-Ch ±100 nA VGS=4.5V, IDS=1.8A N-Ch 170 220 VGS=-4.5V, IDS=-1.2A P-Ch 360 470 VGS=2.5V, IDS=0.9A N-Ch 270 350 VGS=-2.5V, IDS=-0.7A P-Ch 530 690 2 V mΩ www.anpec.com.tw APM2700C Electrical Characteristics (Cont.) Symbol Parameter (TA = 25°C unless otherwise noted) APM2700C Test Condition Min. Typ. Max. Unit Static Characteristics (Cont.) VSD a Diode Forward Voltage Dynamic Characteristics Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time Tf Turn-off Delay Time Turn-off Fall Time Gate Charge Characteristics 0.8 1.3 ISD=-0.5A, VGS=0V P-Ch -0.8 -1.3 N-Channel VGS=0V, VDS=20V, Frequency=1.0MHz N-Ch 130 P-Ch 140 N-Ch 25 P-Channel VGS=0V, VDS=-20V, Frequency=1.0MHz P-Ch 40 N-Ch 15 P-Ch 30 N-Ch 2 4 P-Ch 3 6 N-Ch 17 32 P-Ch 18 33 N-Ch 4 8 P-Ch 10 19 N-Ch 18 33 P-Ch 20 37 N-Ch 4.2 5.5 P-Ch 7 9 N-Ch 0.6 P-Ch 1.1 N-Ch 0.6 P-Ch 1.1 V N-Channel VDD=10V, RL=10Ω, IDS=1A, VGEN=4.5V, RG=6Ω P-Channel VDD=-10V, RL=10Ω, IDS=-1A, VGEN=-4.5V, RG=6Ω pF ns b Qg Total Gate Charge Q gs Gate-Source Charge Q gd N-Ch b Ciss td(OFF) ISD=0.5A, VGS=0V Gate-Drain Charge N-Channel VDS=10V, VGS=4.5V, IDS=1.8A P-Channel VDS=-10V, VGS=-4.5V, IDS=-1.2A nC Notes: a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 3 www.anpec.com.tw APM2700C Typical Characteristics N-Channel Drain Current 1.0 2.0 0.8 1.6 ID - Drain Current (A) Ptot - Power (W) Power Dissipation 0.6 0.4 0.2 0.0 0.8 0.4 0 20 40 60 0.0 80 100 120 140 160 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance 10 it im )L n o s( Rd 300µs 1 1ms 10ms 0.1 100ms 1s DC o TA=25 C 0.02 0.1 0 Tj - Junction Temperature (°C) 20 ID - Drain Current (A) 1.2 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 1E-3 0.01 50 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 2 Mounted on 1in pad o RθJA : 150 C/W 0.1 1 10 100 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM2700C Typical Characteristics (Cont.) N-Channel Output Characteristics Drain-Source On Resistance 350 4.5 VGS= 4,5,6,7,8,9,10V 4.0 RDS(ON) - On - Resistance (mΩ) 3V ID - Drain Current (A) 3.5 3.0 2.5V 2.5 2.0 1.5 2V 1.0 0.5 VGS=2.5V 300 250 200 VGS=4.5V 150 1.5V 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 100 0 1 2 3 4 5 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 6 6 1.4 IDS=250µA Normalized Threshold Voltage ID - Drain Current (A) 5 o Tj=-55 C 4 o 3 Tj=125 C 2 o 1 Tj=25 C 0 0.0 0.8 1.6 2.4 3.2 1.0 0.8 0.6 0.4 -50 -25 4.0 VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1.2 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM2700C Typical Characteristics (Cont.) N-Channel Drain-Source On Resistance Source-Drain Diode Forward 1.75 6 VGS = 4.5V 1.50 o IS - Source Current (A) Normalized On Resistance IDS = 1.8A 1.25 1.00 0.75 Tj=150 C 1 o Tj=25 C 0.1 o RON@Tj=25 C: 170mΩ 0.50 -50 -25 0 25 50 75 0.01 0.0 100 125 150 0.6 0.8 1.0 1.2 1.4 VSD - Source - Drain Voltage (V) Capacitance Gate Charge 1.6 5 Frequency=1MHz VGS - Gate - source Voltage (V) VDS=10V 160 C - Capacitance (pF) 0.4 Tj - Junction Temperature (°C) 200 Ciss 120 80 40 Coss Crss 0 0.2 0 4 8 12 16 4 3 2 1 0 20 0 1 2 3 4 5 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 IDS =1.8A 6 www.anpec.com.tw APM2700C Typical Characteristics P-Channel Drain Current 1.0 1.5 0.8 1.2 -ID - Drain Current (A) Ptot - Power (W) Power Dissipation 0.6 0.4 0.2 0 20 40 60 80 0.0 100 120 140 160 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 10 Rd )L on s( im it 300µs 1 1ms 10ms 0.1 100ms 1s DC o TA=25 C 0.01 0.1 0 Tj - Junction Temperature (°C) 20 -ID - Drain Current (A) 0.6 0.3 Normalized Transient Thermal Resistance 0.0 0.9 1 10 Duty = 0.5 1 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 1E-3 50 -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 2 Mounted on 1in pad o RθJA : 150 C/W 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) 7 www.anpec.com.tw APM2700C Typical Characteristics (Cont.) P-Channel Output Characteristics Drain-Source On Resistance 10 800 -ID - Drain Current (A) 8 RDS(ON) - On - Resistance (mΩ) VGS= -5,-6,-7,-8,-9,-10V -4V 6 -3V -2V 4 2 0 0 1 2 3 600 500 VGS= -4.5V 400 300 200 100 4 VGS= -2.5V 700 0 1 2 3 4 5 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 6 1.4 6 IDS=-250µA Normalized Threshold Voltage -ID - Drain Current (A) 5 o Tj=-55 C 4 o 3 Tj=125 C 2 o Tj=25 C 1 0 0 1 2 3 1.0 0.8 0.6 0.4 -50 -25 4 -VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1.2 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 8 www.anpec.com.tw APM2700C Typical Characteristics (Cont.) P-Channel Drain-Source On Resistance Source-Drain Diode Forward 6 1.8 IDS = -1.2A 1.6 o Tj=150 C -IS - Source Current (A) Normalized On Resistance V GS = -4.5V 1.4 1.2 1.0 0.8 o Tj=25 C 1 0.6 o R ON@T j=25 C: 360m Ω 0.4 -50 -25 0 25 50 75 0.3 0.0 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 -VSD - Source - Drain Voltage (V) Capacitance Gate Charge 5 V DS= -10V -VGS - Gate - source Voltage (V) Frequency=1MHz 200 C - Capacitance (nC) 0.4 Tj - Junction Temperature (°C) 250 Ciss 150 100 Coss 50 Crss 0 0.2 0 4 8 12 16 3 2 1 0 20 0 1 2 3 4 5 6 7 8 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 IDS= -1.2A 4 9 www.anpec.com.tw APM2700C Packaging Information SOT-23-6 D 6 4 5 E 1 2 H 3 S1 e D A α A2 A1 D im A A1 A2 b D E e H L L1 L2 α S1 L2 M i ll im et er s Min. 1.00 0.00 0.70 0.35 2.70 1.40 Max. 1.45 0.15 1.25 0.55 3.10 1.80 1 . 9 0 B SC 2.60 0.30 0.08 3.00 0.25 0.60 REF 0° 0.85 Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 10° 1.05 10 L1 L In c h e s Min. Max. 0.0394 0.0571 0.0000 0.0591 0.0276 0.0492 0.0138 0.0217 0.1063 0.1220 0.50551 0.0709 0.07480 BSC 0.1024 0 . 11 8 1 0 0 0 11 8 0.0031 0.0098 0.024 REF 0° 10° 0.0335 0.0413 www.anpec.com.tw APM2700C Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP C ritical Zone T L to T P T e m p e ra tu re R am p-up TL tL T sm ax T sm in R am p-down ts Preheat 25 t 25 °C to Peak T im e Classificatin Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 11 www.anpec.com.tw APM2700C Classificatin Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Tem peratures 3 3 Package Thickness Volum e m m Volum e m m <350 ≥350 <2.5 m m 240 +0/-5°C 225 +0/-5°C ≥2.5 m m 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Tem peratures 3 3 3 Package Thickness Volum e mm Volum e mm Volum e mm <350 350-2000 >2000 <1.6 m m 260 +0°C* 260 +0°C* 260 +0°C* 1.6 m m – 2.5 m m 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 m m 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0°C. For exam ple 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E P Po D P1 Bo F W Ao Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 D1 12 Ko www.anpec.com.tw APM2700C Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 178±1 SOT-23-6 F B C J 72 ± 1.0 13.0 + 0.2 2.5 ± 0.15 D 3.5 ± 0.05 1.5 +0.1 D1 Po 1.5 +0.1 4.0 ± 0.1 T1 T2 P E 1.5± 0.3 W 8.0+ 0.3 - 0.3 8.4 ± 2 4 ± 0.1 1.75± 0.1 P1 Ao Bo Ko t 1.4± 0.1 0.2±0.03 2.0 ± 0.1 3.15 ± 0.1 3.2± 0.1 (mm) Cover Tape Dimensions Application SOT-23-6 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 13 www.anpec.com.tw WWW.ALLDATASHEET.COM Copyright © Each Manufacturing Company. All Datasheets cannot be modified without permission. This datasheet has been download from : www.AllDataSheet.com 100% Free DataSheet Search Site. Free Download. No Register. Fast Search System. www.AllDataSheet.com