Anpec APM4416KCTR N-channel enhancement mode mosfet Datasheet

APM4416
N-Channel Enhancement Mode MOSFET
Features
Pin Description
SO-8
•
30V/8A , RDS(ON)=15mΩ(typ.) @ VGS=10V
RDS(ON)=22mΩ(typ.) @ VGS=4.5V
•
Super High Dense Cell Design for Extremely
Low RDS(ON)
•
•
Reliable and Rugged
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
SO-8 Package
Top View
Applications
•
D
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
G
Systems.
Ordering and Marking Information
APM 4416
Tem p. R ange
P ackage C ode
A P M 4416
XXXXX
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol
N-Channel MOSFET
P ackage C ode
K : S O -8
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 ° C
H a n d lin g C o d e
TU : Tube
TR : Tape & Reel
H a n d lin g C o d e
A P M 4416 K :
S
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
30
VGSS
Gate-Source Voltage
±20
ID*
Maximum Drain Current – Continuous
8
IDM
Maximum Drain Current – Pulsed
32
Unit
V
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
1
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APM4416
Absolute Maximum Ratings Cont.
Symbol
PD
Parameter
Maximum Power Dissipation
TJ
(TA = 25°C unless otherwise noted)
Rating
TA=25°C
2.5
TA=100°C
1.0
Storage Temperature Range
RθjA
Thermal Resistance – Junction to Ambient
Electrical Characteristics
Symbol
Parameter
W
150
°C
-55 to 150
°C
50
°C/W
Maximum Junction Temperature
TSTG
Unit
(TA = 25°C unless otherwise noted)
Test Condition
APM4416
Min.
Typ.
Max.
Unit
Static
BVDSS
Drain-Source Breakdown
Voltage
IDSS
Zero Gate Voltage Drain
Current
VGS(th)
Gate Threshold Voltage
IGSS
Gate Leakage Current
Drain-Source On-state
RDS(ON)a
Resistance
Diode Forward Voltage
VSDa
VGS=0V , IDS=250µA
30
V
VDS=24V , VGS=0V
1
VDS=24V, VGS=0V, Tj= 55°C
VDS=VGS , IDS=250µA
5
1
3
V
nA
VGS=±20V , VDS=0V
VGS=10V , IDS=4A
15
±100
18
VGS=4.5V , IDS=2A
22
30
ISD=2A , VGS=0V
0.6
µA
1.3
mΩ
V
b
Dynamic
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(ON)
Turn-on Delay Time
VDS=15V , IDS= 10A
15
VGS=5V
5.8
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
VGEN=10V , RG=6Ω
11
18
17
26
37
54
20
30
Tf
Turn-off Fall Time
Ciss
Input Capacitance
VGS=0V
1150
Coss
Output Capacitance
VDS=15V
230
Crss
Reverse Transfer Capacitance Frequency=1.0MHz
a
b
nC
3.8
VDD=15V , IDS=2A ,
Notes
20
ns
pF
100
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
: Guaranteed by design, not subject to production testing
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
2
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APM4416
Typical Characteristics
Output Characteristics
Transfer Characteristics
40
30
VGS=5,6,7,8,9,10V
20
IDS-Drain Current (A)
IDS-Drain Current (A)
25
V GS=4V
15
10
VGS=3.5V
30
20
TJ=25°C
TJ=125°C
10
TJ=-55°C
5
V GS=3V
0
1.0
0
0
2
4
6
8
10
VDS-Drain-to-Source Voltage (V)
2.0
2.5
3.0
3.5
4.0
VGS-Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
On-Resistance vs. Drain Current
1.2
0.040
IDS=250µA
0.035
RDS(ON)-On-Resistance (Ω)
VGS(th)-Threshold Voltage (V)
(Normalized)
1.5
1.0
0.030
VGS=4.5V
0.025
0.8
0.020
VGS=10V
0.015
0.6
0.010
0.005
0.4
-50
-25
0
25
50
75
100
125
0.000
150
0
Tj-Junction Temperature (°C)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
5
10
15
20
25
30
IDS-Drain Current (A)
3
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APM4416
Typical Characteristics Cont.
On-Resistaence vs. Junction Temperature
RDS(ON)-On Resistance (Ω) (Normalized)
On-Resistance vs. Gate-to-Source Voltage
0.045
RDS (ON)-On-Resistance (Ω)
IDS=4A
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
3
4
5
6
7
8
9
10
1.6
VGS=10V
IDS=4A
1.4
1.2
1.0
0.8
0.6
-50
Gate Voltage (V)
0
25
50
75
100
125
150
Tj-Junction Temperature (°C)
Capacitance Characteristics
Gate Charge
2000
10
VDS=15V
IDS=10A
Ciss
1000
8
C-Capacitance (pF)
VGS-Gate-to-Source Voltage (V)
-25
6
4
500
Coss
Crss
100
2
Frequency=1MHz
0
0
5
10
15
20
25
0.1
30
QG-Total Gate Charge (nC)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
1
10
30
VDS-Drain-to-Source Voltage (V)
4
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APM4416
Typical Characteristics Cont.
Source-Drain Diode Forward Voltage
Single Pulse Power
100
60
10
1
40
TJ=125°C
Power (W)
ISD-Source Current (A)
50
TJ=-55°C
20
10
TJ=25°C
0.1
0.0
30
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-2
-1
10
10
VSD-Source to Drain Voltage
0
1
10
10
2
10
Time (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Transient Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
1. Duty Cycle , D=t1/t2
2. Per Unit Base=RthJA=50°C/W
3. TJM-TA=PDMZthJA
4. Surface Mounted
D=0.02
SINGLE PULSE
0.01
-4
10
-3
10
-2
-1
10
10
0
10
1
10
2
10
Square Wave Pulse Duration (sec)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
5
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APM4416
Packaging Information
E
e1
0.015X45
SOP-8 pin ( Reference JEDEC Registration MS-012)
H
e2
D
A1
1
L
0.004max.
Dim
A
Mi ll im et er s
Inche s
A
Min .
1. 35
Max .
1. 75
Min.
0. 053
Max .
0. 069
A1
D
E
0. 10
4. 80
3. 80
0. 25
5. 00
4. 00
0. 004
0. 189
0. 150
0. 010
0. 197
0. 157
H
L
e1
e2
5. 80
0. 40
0. 33
6. 20
1. 27
0. 51
0. 228
0. 016
0. 013
0. 244
0. 050
0. 020
φ 1
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
1. 27B S C
0. 50B S C
8°
8°
6
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APM4416
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
temperature
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
183°C
Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak)
3°C/second max.
120 seconds max
Preheat temperature 125 ± 25°C)
60 – 150 seconds
Temperature maintained above 183°C
Time within 5°C of actual peak temperature 10 –20 seconds
Peak temperature range
220 +5/-0°C or 235 +5/-0°C
Ramp-down rate
6 °C /second max.
6 minutes max.
Time 25°C to peak temperature
VPR
10 °C /second max.
60 seconds
215-219°C or 235 +5/-0°C
10 °C /second max.
Package Reflow Conditions
pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
7
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C
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APM4416
Reliability test program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
D
P
Po
E
P1
Bo
F
W
Ko
Ao
D1
T2
J
C
A
B
T1
Application
SOP- 8
A
B
330 ± 1
F
5.5± 1
J
T1
T2
W
P
E
62 +1.5
C
12.75+
0.15
2 ± 0.5
12.4 ± 0.2
2 ± 0.2
12± 0. 3
8± 0.1
1.75±0.1
D
D1
Po
P1
Ao
Bo
Ko
t
2.0 ± 0.1
6.4 ± 0.1
5.2± 0. 1
1.55 +0.1 1.55+ 0.25 4.0 ± 0.1
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
8
2.1± 0.1 0.3±0.013
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APM4416
Cover Tape Dimensions
Application
SOP- 8
Carrier Width
12
Cover Tape Width
9.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
9
www.anpec.com.tw
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