APM4800 N-Channel Enhancement Mode MOSFET Features Pin Description SO-8 • 30V/8A , RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged S 1 8 D S 2 7 D S 3 6 D G 4 5 D SO-8 Package Top View Applications • D Power Management in Notebook Computer , Portable Equipment and Battery Powered G Systems. Ordering and Marking Information S N-Channel MOSFET APM 4800 P ackage C ode K : S O -8 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel H a n d lin g C o d e Tem p. R ange P ackage C ode APM 4800 K : APM 4800 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 ID* Maximum Drain Current – Continuous 8 IDM Maximum Drain Current – Pulsed 32 Unit V A * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 1 www.anpec.com.tw APM4800 Absolute Maximum Ratings Cont. Symbol PD Parameter Maximum Power Dissipation TJ (TA = 25°C unless otherwise noted) Rating TA=25°C 2.5 TA=100°C 1.0 Storage Temperature Range RθjA Thermal Resistance – Junction to Ambient Electrical Characteristics Symbol Parameter W 150 °C -55 to 150 °C 50 °C/W Maximum Junction Temperature TSTG Unit (TA = 25°C unless otherwise noted) Test Condition APM4800 Min. Typ. Max. Unit Static BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current Drain-Source On-state RDS(ON)a Resistance Diode Forward Voltage VSDa VGS=0V , IDS=250µA 30 V VDS=24V , VGS=0V 1 VDS=24V, VGS=0V, Tj= 55°C VDS=VGS , IDS=250µA 5 1 3 V nA VGS=±20V , VDS=0V VGS=10V , IDS=4A 15 ±100 18 VGS=4.5V , IDS=2A 22 30 ISD=2A , VGS=0V 0.6 µA 1.3 mΩ V b Dynamic Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(ON) Turn-on Delay Time VDS=15V , IDS= 2A 15 VGS=4.5V , 5.8 Tr Turn-on Rise Time td(OFF) Turn-off Delay Time VGEN=10V , RG=0.2Ω 11 18 17 26 37 54 20 30 Tf Turn-off Fall Time Ciss Input Capacitance VGS=0V 1200 Coss Output Capacitance VDS=15V 220 Crss Reverse Transfer Capacitance Frequency=1.0MHz a b nC 3.8 VDD=15V , IDS=1A , Notes 20 ns pF 100 : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 2 www.anpec.com.tw APM4800 Typical Characteristics Output Characteristics Transfer Characteristics 40 30 VGS=5,6,7,8,9,10V 20 IDS-Drain Current (A) IDS-Drain Current (A) 25 V GS=4V 15 10 VGS=3.5V 30 20 TJ=25°C TJ=125°C 10 TJ=-55°C 5 V GS=3V 0 1.0 0 0 2 4 6 8 10 VDS-Drain-to-Source Voltage (V) 2.0 2.5 3.0 3.5 4.0 VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current 1.2 0.040 IDS=250µA 0.035 RDS(ON)-On-Resistance (Ω) VGS(th)-Threshold Voltage (V) (Normalized) 1.5 1.0 0.030 VGS=4.5V 0.025 0.8 0.020 VGS=10V 0.015 0.6 0.010 0.005 0.4 -50 -25 0 25 50 75 100 125 0.000 150 0 Tj-Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 5 10 15 20 25 30 IDS-Drain Current (A) 3 www.anpec.com.tw APM4800 Typical Characteristics Cont. On-Resistaence vs. Junction Temperature RDS(ON)-On Resistance (Ω) (Normalized) On-Resistance vs. Gate-to-Source Voltage 0.045 RDS (ON)-On-Resistance (Ω) IDS=4A 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0.000 3 4 5 6 7 8 9 10 1.6 VGS=10V IDS=4A 1.4 1.2 1.0 0.8 0.6 -50 Gate Voltage (V) 0 25 50 75 100 125 150 Tj-Junction Temperature (°C) Capacitance Characteristics Gate Charge 2000 10 VDS=15V IDS=10A Ciss 1000 8 C-Capacitance (pF) VGS-Gate-to-Source Voltage (V) -25 6 4 500 Coss Crss 100 2 Frequency=1MHz 0 0 5 10 15 20 25 0.1 30 QG-Total Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 1 10 30 VDS-Drain-to-Source Voltage (V) 4 www.anpec.com.tw APM4800 Typical Characteristics Cont. Source-Drain Diode Forward Voltage Single Pulse Power 100 60 10 1 40 TJ=125°C Power (W) ISD-Source Current (A) 50 TJ=-55°C 20 10 TJ=25°C 0.1 0.0 30 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -2 -1 10 10 VSD-Source to Drain Voltage 0 1 10 10 2 10 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Transient Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=50°C/W 3. TJM-TA=PDMZthJA 4. Surface Mounted D=0.02 SINGLE PULSE 0.01 -4 10 -3 10 -2 -1 10 10 0 10 1 10 2 10 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 5 www.anpec.com.tw APM4800 Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 1 L 0.004max. Dim A Mi ll im et er s Inche s A Min . 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 1. 27B S C 0. 50B S C 8° 8° 6 www.anpec.com.tw APM4800 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM4800 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t D P Po E P1 Bo F W Ko Ao D1 T2 J C A B T1 Application SOP- 8 A B 330 ± 1 F 5.5± 1 J T1 T2 W P E 62 +1.5 C 12.75+ 0.15 2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1 D D1 Po P1 Ao Bo Ko t 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 8 2.1± 0.1 0.3±0.013 www.anpec.com.tw 8 APM4800 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 9 www.anpec.com.tw