Anpec APM4953 Dual p-channel enhancement mode mosfet Datasheet

APM4953
Dual P-Channel Enhancement Mode MOSFET
Features
•
•
•
•
Pin Description
-30V/-4.9A, RDS(ON) = 53mΩ(typ.) @ VGS = -10V
5
RDS(ON) = 80mΩ(typ.) @ VGS = -4.5V
&
,
%
,
Super High Density Cell Design
/
Reliable and Rugged
5
!
$
,
SO-8 Package
/
"
#
,
SO − 8
Applications
•
5
5
Power Management in Notebook Computer,
/
/
Portable Equipment and Battery Powered
Systems
,
Ordering and Marking Information
APM 4953
Tem p. R ange
P ackage C ode
A P M 4953
XXXXX
P-Channel MOSFET
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol
,
P ackage C ode
K : S O -8
O p e ra tio n J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 °C
H a n d lin g C o d e
TU : Tube
TR : Tape & Reel
H a n d lin g C o d e
A P M 4953 K :
,
,
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
-30
VGSS
Gate-Source Voltage
±25
ID*
Maximum Drain Current – Continuous
IDM
Maximum Drain Current – Pulsed
TA = 25°C
-4.9
-30
Unit
V
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
1
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APM4953
Absolute Maximum Ratings (Cont.)
Symbol
PD
Parameter
Rating
Maximum Power Dissipation
TJ
(TA = 25°C unless otherwise noted)
TA = 25°C
2.5
TA = 100°C
1.0
Maximum Junction Temperature
TSTG
*
Electrical Characteristics
Parameter
°C
-55 to 150
Thermal Resistance - Junction to Ambient
Symbol
W
150
Storage Temperature Range
RθJA
Unit
50
°C/W
(TA=25°C unless otherwise noted)
Test Condition
Min.
APM4953
=
Typ . Max.
Unit
Static
BV DSS
IDSS
VGS(th)
IGSS
R DS(ON)
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
VDS=VGS , IDS=-250µA
VDS=-24V , VGS=0V
-1
-1.5
-1
µA
-2
V
±100
nA
Gate Leakage Current
VGS=±25V , VDS=0V
VGS=-10V , IDS=-4.9A
>
53
60
VGS=-4.5V , IDS=-3.6A
80
95
ISD=-1.7A , VGS=0V
-0.7
-1.3
29
Diode Forward Voltage
Dynamic
V
-30
Drain-Source On-state
Resistance
V SD
VGS=0V , IDS=-250µA
>
=
Qg
Total Gate Charge
VDS=-15V , IGS=-10V
22.3
lD=-4.6A
4.65
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
2
td(ON)
Tr
Turn-on Delay Time
Turn-on Rise Time
10
18
15
20
td(OFF)
Turn-off Delay Time
22
38
15
1260
25
Tf
Turn-off Fall Time
C iss
Input Capacitance
C oss
Output Capacitance
C rss
Notes
a
b
VDD=-15V , ID=-2A ,
VGEN=-10V , R G=6Ω
R L=7.5Ω
VGS=0V
VDS=-25V
Reverse Transfer Capacitance Frequency=1.0MHz
340
mΩ
V
nC
ns
pF
220
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
: Guaranteed by design, not subject to production testing
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
2
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APM4953
Typical Characteristics
Output Characteristics
-V/5= 5,6,7,8,9,10V
20
25
-ID-Drain Current (A)
25
-V/5=4V
15
10
-V/5=3V
5
0
30
1
2
3
4
5
6
7
15
TJ=125°C
TJ=-55°C
10
TJ=25°C
5
-V/5=2V
0
20
0
8
0
1
Threshold Voltage vs. Junction Temperature
RDS(on)-On-Resistance
(Ω)
1.00
-VGS(th)-Threshold Voltage (V)
(Normalized)
-IDS=250µA
0.50
0.25
-25
0
25
50
75
5
0.12
0.10
V/5=-4.5V
0.08
V/5=-10V
0.06
0.04
0.02
0.00
100 125 150
Tj - Junction Temperature (°C)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
4
0.14
1.25
0.00
-50
3
On-Resistance vs. Drain Current
0.75
2
-VGS - Gate-to-Source Voltage (V)
-VDS - Drain-to-Source Voltage (V)
1.50
30
-ID-Drain Current (A)
Transfer Characteristics
0
3
6
9
12
15
-ID - Drain Current (A)
3
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APM4953
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
-I,= 4.9A
0.225
-VGS=10V
-ID=4.9A
1.75
0.200
1.50
0.175
1.25
0.125
1.00
0.150
0.75
0.100
0.50
0.075
0.050
0.025
2.00
RDS(on)-On-Resistance (Ω)
(Normalized)
0.250
RDS(on)-On-Resistance
(Ω)
On-Resistance vs. Junction Temperature
0.25
1
2
3
4
5
6
7
8
9
0.00
-50
10
-25
0
6
4
2
2000
1600
Ciss
Capacitance (pF)
-VGS-Gate-Source Voltage (V)
Frequency=1MHz
2400
8
1200
800
Coss
400
5
100 125 150
2800
-VD=10V
-ID=4.9A
0
75
Capacitance
Gate Charge
0
50
(°C)
TJ - Junction Temperature
-VGS - Gate-to-Source Voltage (V)
10
25
10
15
20
0
25
QG - Gate Charge (nC)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
Crss
0
5
10
15
20
25
30
-VDS - Drain-to-Source Voltage (V)
4
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APM4953
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
Single Pulse Power
30
50
TJ=25°C
30
TJ=150°C
1
Power (W)
40
-IS-Source Current (Α)
10
20
10
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
0.01
0.1
1
10
100
Time (sec)
-VSD-Source-to-Drain Voltage (V )
Normalized Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle = 0.5
D= 0.2
D= 0.1
0.1
Normalized Effective Transient
Thermal Impedance
2
D= 0.05
D= 0.02
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.T JM -T A=P DMZ thJA
4.Surface Mounted
SINGLE PULSE
0.01
1E-4
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
5
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APM4953
Packaging Information
E
e1
0.015X45
SOP-8 pin ( Reference JEDEC Registration MS-012)
H
e2
D
A1
A
1
L
0.004max.
Dim
Mi ll im et er s
Inche s
A
Min.
1. 35
Max .
1. 75
Min.
0. 053
Max .
0. 069
A1
D
E
0. 10
4. 80
3. 80
0. 25
5. 00
4. 00
0. 004
0. 189
0. 150
0. 010
0. 197
0. 157
H
L
e1
e2
5. 80
0. 40
0. 33
6. 20
1. 27
0. 51
0. 228
0. 016
0. 013
0. 244
0. 050
0. 020
φ 1
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
1. 27BSC
0. 50BSC
8°
8°
6
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APM4953
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
(IR/Convection or VPR Reflow)
temperature
Reflow Condition
Peak temperature
183°C
Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak)
3°C/second max.
120 seconds max
Preheat temperature 125 ± 25°C)
60 – 150 seconds
Temperature maintained above 183°C
Time within 5°C of actual peak temperature 10 –20 seconds
Peak temperature range
220 +5/-0°C or 235 +5/-0°C
Ramp-down rate
6 °C /second max.
6 minutes max.
Time 25°C to peak temperature
VPR
10 °C /second max.
60 seconds
215-219°C or 235 +5/-0°C
10 °C /second max.
Package Reflow Conditions
pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
7
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C
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APM4953
Reliability test program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
D
P
Po
E
t
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
B
T1
Application
SOP- 8
A
B
330 ± 1
F
5.5± 1
J
T1
T2
W
P
E
62 +1.5
C
12.75+
0.15
2 ± 0.5
12.4 ± 0.2
2 ± 0.2
12± 0. 3
8± 0.1
1.75±0.1
D
D1
Po
P1
Ao
Bo
Ko
t
1.55 +0.1 1.55+ 0.25 4.0 ± 0.1
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
2.0 ± 0.1 6.4 ± 0.1
8
5.2± 0. 1
2.1± 0.1 0.3±0.013
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APM4953
Cover Tape Dimensions
Application
SOP- 8
Carrier Width
12
Cover Tape Width
9.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
9
www.anpec.com.tw
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