APT10026L2FLL
1000V 38A 0.260Ω
POWER MOS 7
R
FREDFET
TO-264
Max
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Increased Power Dissipation
• Easier To Drive
• Lower Gate Charge, Qg
• Popular TO-264 MAX Package
MAXIMUM RATINGS
Symbol
VDSS
ID
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT10026L2FLL
UNIT
1000
Volts
Drain-Source Voltage
38
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
893
Watts
Linear Derating Factor
7.14
W/°C
PD
TJ,TSTG
152
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
1
-55 to 150
°C
300
Amps
38
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
50
4
mJ
3200
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
1000
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, 19A)
TYP
MAX
Volts
0.260
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
3
Ohms
µA
±100
nA
5
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
12-2003
Characteristic / Test Conditions
050-7112 Rev A
Symbol
APT10026L2FLL
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
Ciss
Input Capacitance
VGS = 0V
Coss
Output Capacitance
VDS = 25V
C rss
Total Gate Charge
Qgs
3
Qgd
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
ID = 38A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
Rise Time
td(off)
VDD = 500V
Turn-off Delay Time
tf
ID = 38A @ 25°C
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
ns
1196
VDD = 667V, VGS = 15V
Eon
nC
9
RG = 0.6Ω
Eon
UNIT
pF
224
267
34
173
17
8
39
VGS = 10V
td(on)
MAX
7114
1268
VDD = 500V
Gate-Source Charge
tr
TYP
f = 1 MHz
Reverse Transfer Capacitance
Qg
MIN
ID = 38A, RG = 3Ω
713
INDUCTIVE SWITCHING @ 125°C
2014
VDD = 667V VGS = 15V
ID = 38A, RG = 3Ω
µJ
971
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
Characteristic / Test Conditions
MIN
TYP
MAX
38
Continuous Source Current (Body Diode)
UNIT
Amps
Pulsed Source Current
1
(Body Diode)
152
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -38A)
1.3
Volts
dv/
Peak Diode Recovery
18
V/ns
dt
dv/
dt
5
Reverse Recovery Time
(IS = -38A, di/dt = 100A/µs)
Tj = 25°C
310
Tj = 125°C
625
Q rr
Reverse Recovery Charge
(IS = -38A, di/dt = 100A/µs)
Tj = 25°C
2.0
Tj = 125°C
6.0
IRRM
Peak Recovery Current
(IS = -38A, di/dt = 100A/µs)
Tj = 25°C
15
Tj = 125°C
2.6
t rr
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
MAX
0.14
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.14
0.9
0.12
0.7
0.5
Note:
0.06
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7112 Rev A
12-2003
0.16
0.08
0.3
0.04
t1
t2
0.02
Duty Factor D = t1/t2
0.1
0.05
0
10-5
SINGLE PULSE
10-4
°C/W
4 Starting Tj = +25°C, L = 4.43mH, RG = 25Ω, Peak IL = 38A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -30A di/dt ≤ 700A/µs VR ≤ 1000 TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.10
UNIT
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT10026L2FLL
90
15 &10V
RC MODEL
Junction
temp. (°C)
0.0509
0.0522F
Power
(watts)
0.0894
0.988F
ID, DRAIN CURRENT (AMPERES)
80
Case temperature. (°C)
70
6.5V
60
50
40
6V
30
20
5.5V
10
5V
TJ = -55°C
80
60
40
TJ = +25°C
20
TJ = +125°C
0
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
40
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
NORMALIZED TO
= 10V @ I = 19A
GS
D
1.3
1.2
VGS=10V
1.1
1.0
VGS=20V
0.9
0.8
0
10
20
30
40
50
60
70
80
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
30
25
20
15
10
5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I
D
1.00
0.95
0.90
0.85
-50
= 19A
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
1.05
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
V
1.10
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, RDS(ON) vs. TEMPERATURE
1.1
1.0
0.9
0.8
12-2003
ID, DRAIN CURRENT (AMPERES)
V
1.15
35
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.4
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7112 Rev A
ID, DRAIN CURRENT (AMPERES)
100
VDS> ID (ON) x RDS(ON) MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
120
7.5V
7V
APT10026L2FLL
30,000
OPERATION HERE
LIMITED BY RDS (ON)
100µS
50
10
1mS
100
= 38A
VDS = 200V
12
VDS = 500V
8
VDS = 800V
4
0
0
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
D
Coss
1,000
Crss
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I
Ciss
10mS
TC = +25°C
TJ = +150°C
SINGLE PULSE
1
10,000
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
152
50
100 150 200 250 300 350 400
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
100
TJ =+150°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
100
160
V
td(off)
140
G
J
DD
R
G
tf
= 667V
tr and tf (ns)
td(on) and td(off) (ns)
L = 100µH
V
= 3Ω
T = 125°C
J
L = 100µH
60
40
V
DD
R
G
5 10 15 20 25 30 35 40 45 50 55 60
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
10000
= 667V
V
= 3Ω
I
T = 125°C
050-7112 Rev A
L = 100µH
E ON includes
diode reverse recovery.
Eon
2000
1500
1000
Eoff
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
12-2003
J
2500
tr
0
5 10 15 20 25 30 35 40 45 50 55 60
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
3000
40
20
0
3500
60
td(on)
20
4000
= 3Ω
T = 125°C
80
80
= 667V
DD
R
120
100
TJ =+25°C
DD
D
= 667V
Eoff
= 38A
T = 125°C
J
8000
L = 100µH
EON includes
diode reverse recovery.
6000
4000
Eon
2000
500
0
5 10 15 20 25 30 35 40 45 50 55 60
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT10026L2FLL
10%
90%
T = 125°C
J
td(off)
td(on)
90%
tr
5%
90%
10%
tf
5%
10%
Switching Energy
Switching Energy
0
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF120
V DD
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-264 MAXTM(L2) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
25.48 (1.003)
26.49 (1.043)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
12-2003
2.29 (.090)
2.69 (.106)
050-7112 Rev A
Drain
5.79 (.228)
6.20 (.244)