APT10035JLL
1000V
R
POWER MOS 7
0.350Ω
25A
MOSFET
S
S
27
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
2
T-
D
G
SO
"UL Recognized"
ISOTOP ®
D
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
G
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT10035JLL
UNIT
1000
Volts
Drain-Source Voltage
25
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
520
Watts
Linear Derating Factor
4.16
W/°C
VGSM
PD
TJ,TSTG
100
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
25
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
1000
Volts
25
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 14A)
TYP
MAX
0.350
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
3-2003
BVDSS
Characteristic / Test Conditions
050-7016 Rev C
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT10035JLL
Test Conditions
Characteristic
MIN
TYP
C iss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
881
Reverse Transfer Capacitance
f = 1 MHz
160
VGS = 10V
186
VDD = 500V
24
Crss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
ID = 28A @ 25°C
td(off)
tf
10
VDD = 500V
ID = 28A @ 25°C
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
9
INDUCTIVE SWITCHING @ 25°C
6
900
VDD = 670V, VGS = 15V
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ID = 28A, RG = 5Ω
623
INDUCTIVE SWITCHING @ 125°C
6
ns
36
RG = 1.6Ω
Fall Time
nC
12
VGS = 15V
Turn-off Delay Time
pF
122
RESISTIVE SWITCHING
Rise Time
UNIT
5185
VGS = 0V
3
MAX
µJ
1423
VDD = 670V VGS = 15V
ID = 28A, RG = 5Ω
779
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
MIN
Characteristic / Test Conditions
TYP
25
Continuous Source Current (Body Diode)
100
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -ID25A, dl S/dt = 100A/µs)
1170
Q rr
Reverse Recovery Charge (IS = -ID25A, dl S /dt = 100A/µs)
16.28
dv/
dt
Peak Diode Recovery
dv/
(Body Diode)
1.3
(VGS = 0V, IS = -ID25A)
dt
MAX
5
UNIT
Amps
Volts
ns
µC
10
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
MIN
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.24
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 9.60mH, RG = 25Ω, Peak IL = 25A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID25A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.20
0.7
0.15
0.5
Note:
0.10
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7016 Rev C
3-2003
0.25
0.3
t1
t2
0.05
0.1
0
SINGLE PULSE
0.05
10-5
10-4
°C/W
40
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT10035JLL
60
RC MODEL
0.0528
Power
(Watts)
0.0651
0.123
0.0203F
0.173F
0.490F
Case temperature
ID, DRAIN CURRENT (AMPERES)
VGS =15,10 & 8V
Junction
temp. ( ”C)
50
7V
40
6.5V
30
6V
20
5.5V
10
5V
0
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
60
50
40
30
TJ = +125°C
TJ = -55°C
20
10
0
TJ = +25°C
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
25
20
15
10
5
0
25
I
V
D
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50
1.2
= 14A
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
GS
1.30
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
NORMALIZED TO
V
= 10V @ 14A
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
3-2003
70
050-7016 Rev C
ID, DRAIN CURRENT (AMPERES)
80
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
APT10035JLL
Typical Performance Curves
20,000
OPERATION HERE
LIMITED BY RDS (ON)
50
10,000
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
10mS
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I
D
= 28A
12
VDS=200V
VDS=500V
VDS=800V
8
4
0
0
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
C, CAPACITANCE (pF)
Ciss
100µS
1,000
Coss
Crss
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
100
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
180
80
V
160
G
V
DD
R
G
100
= 5Ω
T = 125°C
J
L = 100µH
80
L = 100µH
= 670V
tr and tf (ns)
td(on) and td(off) (ns)
120
40
tr
60
20
td(on)
20
0
0
0
10
20
30
40
50
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
0
30
40
50
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2500
10
20
5000
V
DD
R
G
= 670V
Eon
= 5Ω
T = 125°C
2000
J
L = 100µH
E ON includes
diode reverse recovery.
1500
1000
500
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
tf
J
60
40
3-2003
= 670V
= 5Ω
T = 125°C
140
050-7016 Rev C
DD
R
td(off)
Eoff
4000
3000
Eon
2000
V
I
DD
D
= 670V
= 28A
T = 125°C
J
1000
L = 100µH
E ON includes
Eoff
diode reverse recovery.
0
0
10
20
30
40
50
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT10035JLL
Gate Voltage
10 %
90%
T = 125 C
J
td(on)
Gate Voltage
T = 125 C
J
t
d(off)
tr
Drain Current
90%
5%
10 %
Drain Voltage
5%
90%
Drain Voltage
10%
tf
Switching Energy
Drain Current
0
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT15DF120B
V DD
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3-2003
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7016 Rev C
7.8 (.307)
8.2 (.322)