APT10090BFLL
APT10090SFLL
1000V 12A 0.900Ω
R
POWER MOS 7
FREDFET
BFLL
D3PAK
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
SFLL
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
TO-247
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
APT10090
UNIT
1000
Volts
12
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
298
Watts
Linear Derating Factor
2.4
W/°C
VGSM
PD
TJ,TSTG
48
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
-55 to 150
Operating and Storage Junction Temperature Range
TL
1
12
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
Amps
30
4
mJ
1210
STATIC ELECTRICAL CHARACTERISTICS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
TYP
MAX
UNIT
1000
Volts
12
Amps
(VGS = 10V, 6A)
0.90
Ohms
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
7-2003
BVDSS
Characteristic / Test Conditions
050-7041 Rev C
Symbol
APT10090BFLL - SFLL
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
C iss
Coss
Crss
Input Capacitance
VGS = 0V
Output Capacitance
VDS = 25V
Total Gate Charge
Qgs
Gate-Source Charge
3
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
ID = 12A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
Rise Time
VDD = 500V
Turn-off Delay Time
tf
ID = 12A @ 25°C
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ns
334
VDD = 670V, VGS = 15V
77
ID = 12A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
6
nC
4
RG = 0.6Ω
Eon
UNIT
pF
55
71
12
47
9
5
23
VDD = 500V
td(on)
MAX
1969
332
VGS = 10V
Qgd
td(off)
TYP
f = 1 MHz
Reverse Transfer Capacitance
Qg
tr
MIN
Test Conditions
µJ
672
VDD = 670V VGS = 15V
100
ID = 12A, RG = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
(Body Diode)
48
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -ID 12A)
1.3
Volts
18
V/ns
dv/
Peak Diode Recovery
dt
dv/
dt
12
5
Reverse Recovery Time
(IS = -ID 12A, di/dt = 100A/µs)
Tj = 25°C
200
Tj = 125°C
350
Q rr
Reverse Recovery Charge
(IS = -ID 12A, di/dt = 100A/µs)
Tj = 25°C
0.7
Tj = 125°C
2.0
IRRM
Peak Recovery Current
(IS = -ID 12A, di/dt = 100A/µs)
Tj = 25°C
10
Tj = 125°C
15
t rr
Amps
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.42
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.7
0.25
0.5
Note:
0.20
0.15
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
7-2003
050-7041 Rev C
0.9
0.35
0.30
0.3
0.1
0.05
SINGLE PULSE
0.05
0
t1
t2
0.10
10-5
10-4
°C/W
4 Starting Tj = +25°C, L = 16.8mH, RG = 25Ω, Peak IL = 12A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID12A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery measured in accordance wtih
JEDEC standard JESD24-1. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.45
0.40
UNIT
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT10090BFLL - SFLL
RC MODEL
Junction
temp. ( ”C)
0.164
0.00592F
Power
(Watts)
0.257
0.125F
Case temperature
ID, DRAIN CURRENT (AMPERES)
30
25
VGS =15,10V& 7.5V
20
7V
6.5
15
6V
10
5.5V
5
5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
30
25
20
TJ = +125°C
15
TJ = +25°C
10
0
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
NORMALIZED TO
= 10V @ I = 6A
GS
D
1.30
1.20
1.10
VGS=10V
1.00
VGS=20V
0.90
0.80
0
5
10
15
20
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
12
10
8
6
4
2
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I
D
V
GS
1.05
1.00
0.95
0.90
0.85
-50
1.2
= 6A
= 10V
2.0
1.5
1.0
0.5
0.0
-50
1.10
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, RDS(ON) vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
7-2003
5
VDS> ID (ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
050-7041 Rev C
ID, DRAIN CURRENT (AMPERES)
TJ = -55°C
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
APT10090BFLL - SFLL
10,000
OPERATION HERE
LIMITED BY RDS (ON)
Ciss
10
100µS
1mS
1
10mS
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
48
Coss
100
Crss
TC =+25°C
TJ =+150°C
SINGLE PULSE
.1
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I
= 12A
D
12
VDS=200V
VDS=500V
VDS=800V
8
4
0
0
10
20 30 40 50 60 70 80 90 100
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1,000
60
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
40
td(off)
tf
50
V
DD
R
G
= 670V
tr and tf (ns)
td(on) and td(off) (ns)
30
40
= 5Ω
T = 125°C
J
30
L = 100µH
20
V
G
L = 100µH
td(on)
0
5
0
10
15
20
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
10
15
20
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1200
0
5
1200
V
DD
R
G
1000
= 670V
Eon
= 5Ω
1000
T = 125°C
J
L = 100µH
E ON includes
800
diode reverse recovery.
600
400
Eoff
200
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
tr
J
10
7-2003
= 670V
= 5Ω
T = 125°C
20
10
050-7041 Rev C
DD
R
800
Eon
600
V
400
I
DD
D
= 670V
= 12A
T = 125°C
Eoff
200
J
L = 100µH
E ON includes
diode reverse recovery.
0
0
5
10
15
20
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT10090BFLL - SFLL
Gate Voltage
90%
10 %
Gate Voltage
T = 125 C
J
td(on)
tr
T = 125 C
J
td(off)
Drain Current
Drain Voltage
90%
90%
5%
5%
10 %
10%
Drain Voltage
tf
Switching Energy
Drain Current
0
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF120B
IC
V DD
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
3
TO-247 Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
Drain
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
D PAK Package Outline
5.38 (.212)
6.20 (.244)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters (Inches)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents:
1.98 (.078)
2.08 (.082)
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
7-2003
4.50 (.177) Max.
050-7041 Rev C
0.46 (.018)
0.56 (.022) {3 Plcs}
2.87 (.113)
3.12 (.123)