Microsemi APT100DL60HJ Isotop fast diode full bridge power module Datasheet

APT100DL60HJ
ISOTOP®Fast Diode
Full Bridge Power Module
VRRM = 600V
IF = 100A @ Tc = 80°C
Application
•
•
•
•
Switch mode power supplies rectifier
Induction heating
Welding equipment
High speed rectifiers
Features
•
•
•
•
•
•
•
•
+
~
~
Ultra fast recovery times
Soft recovery characteristics
High blocking voltage
High current
Low leakage current
Very low stray inductance
High level of integration
ISOTOP® Package (SOT-227)
Benefits
•
•
•
•
•
•
-
Outstanding performance at high frequency operation
Low losses
Low noise switching
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
Absolute maximum ratings
IF(AV)
Maximum Average Forward
Current
IFRM
Maximum repetitive forward current limited
by TJmax
Duty cycle = 50%
TC = 80°C
Max ratings
Unit
600
V
100
November, 2009
Parameter
Maximum DC reverse Voltage
Maximum Peak Repetitive Reverse Voltage
A
8.3ms
TJ = 45°C
200
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-3
APT100DL60HJ – Rev 0
Symbol
VR
VRRM
APT100DL60HJ
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
VF
Diode Forward Voltage
IF = 100A
IRM
Maximum Reverse Leakage Current
VR = 600V
Min
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Typ
1.6
1.5
Max
2
Unit
V
250
500
µA
Max
Unit
Dynamic Characteristics
Symbol Characteristic
Test Conditions
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 100A
VR = 300V
di/dt = 2000A/µs
Err
Reverse Recovery Energy
Min
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Typ
125
180
4.7
9.9
1.1
2.4
ns
µC
mJ
Thermal and package characteristics
Symbol
RthJC
RthJA
VISOL
TJ,TSTG
TL
Torque
Wt
Characteristic
Junction to Case Thermal resistance
Junction to Ambient
Min
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
-55
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
Typ
Max
0.77
20
Unit
°C/W
V
175
300
1.5
29.2
°C
N.m
g
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
25.2 (0.992)
25.4 (1.000)
3.30 (.130) 12.6 (.496)
4.57 (.180) 12.8 (.504)
November, 2009
7.8 (.307)
8.2 (.322)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
Dimensions in Millimeters and (Inches)
38.0 (1.496)
38.2 (1.504)
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2-3
APT100DL60HJ – Rev 0
31.5 (1.240)
31.7 (1.248)
APT100DL60HJ
Typical Performance Curve
Forward Characteristic of diode
Energy losses vs Collector Current
200
4
VCE = 300V
VGE=-15V
TJ = 150°C
175
3
150
Err (mJ)
IF (A)
125
100
75
TJ=150°C
50
1
25
TJ=25°C
0
0
0
0.4
2
0.8
1.2
1.6
VF (V)
2
0
2.4
25
50
75
100 125 150 175 200
IF (A)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.8
0.7
0.6
0.9
0.7
0.5
0.4
0.3
0.2
0.1
0.5
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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3-3
APT100DL60HJ – Rev 0
ISOTOP® is a registered trademark of ST Microelectronics NV
November, 2009
Rectangular Pulse Duration in Seconds
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