APT100GT120JU2 ISOTOP® Boost chopper Trench + Field Stop IGBT® Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch K C Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integration G E K E Benefits • Low conduction losses • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant C G VCES = 1200V IC = 100A @ Tc = 80°C ISOTOP Symbol VCES IC1 IC2 ICM VGE PD IFA V IFRMS Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) TC = 80°C Max ratings 1200 140 100 280 ±20 480 27 34 Unit V A V W A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. www microsemi.com 1–7 APT100GT120JU2 – Rev 1 June, 2006 Absolute maximum ratings APT100GT120JU2 All ratings @ Tj = 25°C unless otherwise specified Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 100A Tj = 125°C VGE = VCE, IC = 4mA VGE = ±20V, VCE = 0V Min Typ 1.4 1.7 2.0 Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Resistive Switching (25°C) VGE = 15V VBus = 600V IC = 100A R G = 3.9Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 100A R G = 3.9Ω www microsemi.com 5.0 Typ 7200 400 300 260 30 420 70 290 45 520 90 10 12 Max 5 2.1 Unit mA 6.5 400 V nA Max Unit V pF ns ns mJ 2–7 APT100GT120JU2 – Rev 1 June, 2006 Electrical Characteristics APT100GT120JU2 Chopper diode ratings and characteristics Symbol VF Characteristic Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Reverse Recovery Time trr Test Conditions IF = 30A IF = 60A IF = 30A VR = 1200V VR = 1200V VR = 200V IF=1A,VR=30V di/dt =100A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 31 IF = 30A VR = 800V di/dt =200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 370 500 5 12 660 3450 220 4650 37 Reverse Recovery Time IRRM Maximum Reverse Recovery Current Qrr Reverse Recovery Charge trr Qrr Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IRRM IF = 30A VR = 800V di/dt =1000A/µs Min Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) 250 500 Tj = 125°C Characteristic RthJC Max 2.5 32 Thermal and package characteristics Symbol Typ 2.0 2.3 1.8 Min Typ IGBT Diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 2500 -55 Unit V µA pF ns A nC ns nC A Max 0.26 1.1 20 Unit °C/W V 150 300 1.5 29.2 °C N.m g Oper ating Fre que ncy vs Collector Curr ent 40 V CE =600V D=50% RG=3.9 Ω TJ =125°C 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 IC (A) www microsemi.com 3–7 APT100GT120JU2 – Rev 1 June, 2006 Fmax, Operating Frequency (kHz) Typical IGBT Performance Curve APT100GT120JU2 Output Characteristics (VGE=15V) Output Characteristics 200 200 TJ = 125°C T J=25°C VGE=17V 150 TJ=125°C IC (A) IC (A) 150 100 50 VGE =15V 100 V GE=9V 50 0 0 0 1 2 3 4 0 1 2 VCE (A) V CE (V) 4 25 15 V CE = 600V VGE = 15V RG = 3.9 Ω TJ = 125°C 10 Eoff TJ=25°C 20 150 TJ=125°C E (mJ) IC (A) 3 Energy losses vs Collector Current Transfert Characteristics 200 100 50 Eon 5 0 0 5 6 7 8 9 10 11 0 12 25 50 Switching Energy Losses vs Gate Resistance 240 VCE = 600V VGE =15V IC = 100A T J = 125°C Eon 200 160 Eoff IC (A) 15 100 125 150 175 200 Reverse Safe Operating Area 25 20 75 IC (A) VGE (V) E (mJ) V GE=13V 10 120 80 5 VGE=15V TJ=125°C RG=3.9 Ω 40 0 0 0 5 10 15 20 Gate Resistance (ohms) 25 0 400 800 VCE (V) 1200 1600 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.05 0 0.00001 0.3 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www microsemi.com 4–7 APT100GT120JU2 – Rev 1 June, 2006 Thermal Impedance (°C/W) 0.3 APT100GT120JU2 www microsemi.com 5–7 APT100GT120JU2 – Rev 1 June, 2006 Typical Diode Performance Curve www microsemi.com 6–7 APT100GT120JU2 – Rev 1 June, 2006 APT100GT120JU2 APT100GT120JU2 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) Cathode 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) Collector * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate ISOTOP® is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www microsemi.com 7–7 APT100GT120JU2 – Rev 1 June, 2006 Dimensions in Millimeters and (Inches)