APT10M07JVR
100V 225A 0.007Ω
POWER MOS V ®
S
S
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
27
2
T-
D
G
SO
"UL Recognized"
ISOTOP ®
• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• Popular SOT-227 Package
D
G
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT10M07JVR
UNIT
100
Volts
Drain-Source Voltage
225
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
700
Watts
Linear Derating Factor
5.6
W/°C
VGSM
PD
TJ,TSTG
900
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
225
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
50
4
mJ
3600
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
100
Volts
225
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
TYP
(VGS = 10V, 0.5 ID[Cont.])
MAX
0.007
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
UNIT
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 5.0mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
050-5584 Rev B
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT10M07JVR
Characteristic
Test Conditions
MIN
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
18000
21600
Coss
Output Capacitance
VDS = 25V
6800
9500
Reverse Transfer Capacitance
f = 1 MHz
2800
4200
Crss
Qg
Total Gate Charge
Qgs
3
VGS = 10V
700
1050
VDD = 0.5 VDSS
130
195
ID = 100A @ 25°C
300
435
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
VGS = 15V
25
50
VDD = 0.5 VDSS
60
120
ID = ID[Cont.] @ 25°C
80
120
RG = 0.6Ω
20
40
TYP
MAX
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
Characteristic / Test Conditions
MIN
225
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
900
Diode Forward Voltage
2
(VGS = 0V, IS = -ID[Cont.])
1.3
t rr
Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs)
Q rr
Reverse Recovery Charge (IS = -ID[Cont.], dl S /dt = 100A/µs)
UNIT
Amps
Volts
330
ns
3
µC
THERMAL / PACKAGE CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
VIsolation
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Torque
Maximum Torque for Device Mounting Screws and Electrical Terminations.
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
TYP
MAX
UNIT
0.18
40
°C/W
2500
Volts
13
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 142µH, R = 25Ω, Peak I = 225A
j
G
L
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.1
D=0.5
0.05
0.2
0.1
0.01
0.005
0.05
Note:
0.02
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5584 Rev B
0.2
0.01
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
0.0005
10-5
t1
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
lb•in
APT10M07JVR
360
VGS=7V, 8V, 9V, 10V & 15V
300
6.5V
240
6V
180
5.5V
120
5V
60
ID, DRAIN CURRENT (AMPERES)
VGS=15V
300
10V
9V
240
6V
5.5V
120
5V
60
4.5V
300
TJ = +125°C
240
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
180
120
TJ = +125°C
60
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
250
200
150
100
50
0
0
0.5
1.0
1.5
2.0
2.5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
TJ = +25°C
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
25
1.10
V
1.05
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
VGS=10V
1.00
0.95
0.90
0.85
0.80
VGS=20V
0
100
200
300
400
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.00
-50
1.2
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
1.75
1.50
1.25
1.00
0.75
0.50
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
6.5V
0
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
TJ = -55°C
7V
180
4.5V
0
360
8V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5584 Rev B
ID, DRAIN CURRENT (AMPERES)
360
APT10M07JVR
OPERATION HERE
LIMITED BY RDS (ON)
500
50,000
10µS
100µS
Ciss
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
1,000
1mS
100
50
10mS
100mS
10
DC
TC =+25°C
TJ =+150°C
SINGLE PULSE
5
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I = 100A
D
VDS=20V
VDS=50V
12
VDS=80V
8
4
0
Crss
5,000
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
5
10
50
100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
10,000
1,000
1
20
Coss
0
200 400 600 800 1000 1200 1400
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
500
TJ =+150°C
100
TJ =+25°C
50
10
5
1
0
0.4
0.8
1.2
1.6
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
1.95 (.077)
2.14 (.084)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
050-5584 Rev B
* Source
Gate
Dimensions in Millimeters and (Inches)
"UL Recognized" File No. E145592
ISOTOP® is a Registered Trademark of SGS Thomson.
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058