APT10M09B2VFR
APT10M09LVFR
100V
POWER MOS V® FREDFET
100A
0.009Ω
B2VFR
T-MAX™
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
TO-264
LVFR
• T-MAX™ or TO-264 Package
• Avalanche Energy Rated
• Faster Switching
• FAST RECOVERY BODY DIODE
D
G
• Lower Leakage
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT10M09B2VFR_LVFR
UNIT
100
Volts
Drain-Source Voltage
Continuous Drain Current
6
100
@ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
625
Watts
Linear Derating Factor
5.00
W/°C
PD
TJ,TSTG
1
400
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
100
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
100
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 50A)
TYP
MAX
Volts
0.009
Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 80V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
2
Ohms
µA
±100
nA
4
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
5-2004
Characteristic / Test Conditions
050-5905 Rev A
Symbol
APT10M09B2VFR_LVFR
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
MIN
TYP
Ciss
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
3940
Reverse Transfer Capacitance
f = 1 MHz
1470
3
VGS = 10V
350
Gate-Source Charge
VDD = 50V
60
ID = 100A @ 25°C
180
VGS = 15V
18
Crss
Qg
Total Gate Charge
Qgs
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
MAX
UNIT
9875
VDD = 50V
36
ID = 100A @ 25°C
50
RG = 0.6Ω
9
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
Characteristic / Test Conditions
MIN
TYP
MAX
100
Continuous Source Current (Body Diode)
UNIT
Amps
Pulsed Source Current
1
(Body Diode)
400
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -100A)
1.3
Volts
dv/
Peak Diode Recovery
8
V/ns
dt
dv/
dt
5
t rr
Reverse Recovery Time
(IS = -100A, di/dt = 100A/µs)
Tj = 25°C
190
Tj = 125°C
370
Q rr
Reverse Recovery Charge
(IS = -100A, di/dt = 100A/µs)
Tj = 25°C
0.4
Tj = 125°C
1.7
IRRM
Peak Recovery Current
(IS = -100A, di/dt = 100A/µs)
Tj = 25°C
9
Tj = 125°C
15
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.20
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.7
0.5
0.10
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5905 Rev A
5-2004
0.25
0.15
0.3
0.1
0
t1
t2
0.05
10-5
Duty Factor D = t1/t2
SINGLE PULSE
0.05
10-4
10-3
°C/W
4 Starting T = +25°C, L = 0.60mH, R = 25Ω, Peak I = 100A
j
G
L
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID100A di/dt ≤ 200A/µs VR ≤100V TJ ≤ 150°C
6 The maximum current is limited by lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.20
UNIT
Peak TJ = PDM x ZθJC + TC
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
VGS =15V, 10V, & 9V
0.0302
Power
(watts)
0.0729
0.0955
0.00809F
0.0182F
0.264F
ID, DRAIN CURRENT (AMPERES)
RC MODEL
Junction
temp. (°C)
APT10M09B2VFR_LVFR
350
300
8V
250
200
7V
150
6V
100
50
5V
Case temperature. (°C)
0
120
1.40
80
60
TJ = -55°C
40
TJ = +25°C
20
0
1
2
3
4
5
6
7
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
80
60
40
20
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
1.10
1.00
VGS=10V
VGS=20V
0.90
0.80
0
40
80
120
160
200
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
2.00
I
V
D
= 50A
GS
= 10V
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
1.20
1.15
100
1.75
GS
1.30
1.50
1.25
1.00
0.75
0.50
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.1
1.0
0.9
0.8
5-2004
0
TJ = +125°C
NORMALIZED TO
= 10V @ 50A
V
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5905 Rev A
ID, DRAIN CURRENT (AMPERES)
100
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
0
APT10M09B2VFR_LVFR
30,000
400
50
1mS
10
10mS
5
Crss
1,000
100
1
10
100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
16
I
D
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Coss
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
= 100A
12
VDS = 20V
8
VDS = 50V
VDS = 80V
4
0
Ciss
10,000
100µS
100
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
0
100
200
300
400
500
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
T-MAXTM (B2) Package Outline (B2VFR)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-264 (L) Package Outline (LVFR)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
Drain
Drain
20.80 (.819)
21.46 (.845)
050-5905 Rev A
5-2004
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Gate
Drain
Source
Source
2.21 (.087)
2.59 (.102)
2.29 (.090)
2.69 (.106)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.