APT10M19BVFR
APT10M19SVFR
100V 75A
POWER MOS V® FREDFET
0.019Ω
BVFR
D3PAK
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
TO-247
SVFR
• Faster Switching
• Avalanche Energy Rated
• Lower Leakage
• FAST RECOVERY BODY DIODE
D
G
• TO-247 or Surface Mount D3PAK Package
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT10M19BVFR_SVFR
UNIT
100
Volts
Drain-Source Voltage
75
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
370
Watts
Linear Derating Factor
2.96
W/°C
PD
TJ,TSTG
1
300
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
75
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
30
4
mJ
1500
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
100
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 37.5A)
TYP
MAX
UNIT
Volts
0.019
Ohms
Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 80V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
6-2004
Characteristic / Test Conditions
050-5606 Rev B
Symbol
APT10M19BVFR_SVFR
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
MIN
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
5100
6120
Coss
Output Capacitance
VDS = 25V
1900
2660
Reverse Transfer Capacitance
f = 1 MHz
800
1200
3
VGS = 10V
200
300
Gate-Source Charge
VDD = 50V
40
60
ID = 75A @ 25°C
92
140
VGS = 15V
16
32
VDD = 50V
40
80
ID = 75A @ 25°C
50
75
20
40
TYP
MAX
Crss
Qg
Total Gate Charge
Qgs
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
RG = 1.6Ω
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Symbol
IS
ISM
MIN
75
Continuous Source Current (Body Diode)
UNIT
Amps
Pulsed Source Current
1
(Body Diode)
300
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -75A)
1.3
Volts
dv/
Peak Diode Recovery
5
V/ns
dt
dv/
dt
5
t rr
Reverse Recovery Time
(IS = -75A, di/dt = 100A/µs)
Tj = 25°C
200
Tj = 125°C
350
Q rr
Reverse Recovery Charge
(IS = -75A, di/dt = 100A/µs)
Tj = 25°C
0.5
Tj = 125°C
1.0
IRRM
Peak Recovery Current
(IS = -75A, di/dt = 100A/µs)
Tj = 25°C
8
Tj = 125°C
12
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
TYP
MAX
0.34
40
D=0.5
0.2
0.1
0.05
0.01
0.005
Note:
0.02
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5606 Rev B
6-2004
0.4
0.05
0.01
0.001
10-5
t1
t2
SINGLE PULSE
10-4
°C/W
4 Starting Tj = +25°C, L = 0.53mH, RG = 25Ω, Peak IL = 75A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID75A di/dt ≤ 700A/µs VR ≤100V TJ ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.1
UNIT
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
APT10M19BVFR_SVFR
200
VGS=9V, 10V & 15V
160
8V
120
7V
6.5V
80
6V
5.5V
40
5V
ID, DRAIN CURRENT (AMPERES)
VGS=15V
160
120
7V
6.5V
80
6V
5.5V
40
5V
4.5V
0
0
100
TJ = +125°C
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
75
50
TJ = +125°C
25
TJ = +25°C
0
TJ = -55°C
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
60
40
20
0
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
1.80
1.60
1.40
VGS=10V
1.20
1.00
0.80
VGS=20V
0
50
100
150
200
250
300
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
25
2.00
I
D
= 0.5 I
D
V
GS
1.00
0.95
-50
1.2
[Cont.]
= 10V
1.50
1.25
1.00
0.75
0.50
-50
1.05
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
1.75
1.10
0.90
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
V
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
80
2.00
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.1
1.0
0.9
0.8
6-2004
ID, DRAIN CURRENT (AMPERES)
TJ = +25°C
0
1
2
3
4
5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
TJ = -55°C
9V
8V
4.5V
125
10V
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5606 Rev B
ID, DRAIN CURRENT (AMPERES)
200
APT10M19BVFR_SVFR
100µS
OPERATION HERE
LIMITED BY RDS (ON)
15,000
10,000
100
1mS
50
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
300
10mS
10
100mS
5
TC =+25°C
TJ =+150°C
SINGLE PULSE
DC
= 0.5 I
D
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
D
[Cont.]
VDS=20V
16
VDS=50V
12
VDS=80V
8
4
0
Crss
500
1
5
10
50
100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
0
50
100 150 200 250 300 350
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
200
100
10
5
1
0
0.4
0.8
1.2
1.6
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
3
Drain
6-2004
050-5606 Rev B
Drain
(Heat Sink)
5.38 (.212)
6.20 (.244)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
20.80 (.819)
21.46 (.845)
0.40 (.016)
0.79 (.031) 19.81 (.780)
20.32 (.800)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
15.95 (.628)
16.05 (.632)
1.04 (.041)
1.15 (.045)
13.41 (.528)
13.51 (.532)
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99 (.551)
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
TJ =+25°C
D PAK Package Outline (SVFR)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
TJ =+150°C
50
TO-247 Package Outline (BVFR)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
Coss
1,000
1
20
Ciss
5,000
0.46 (.018)
0.56 (.022)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.40 (.094)
2.70 (.106)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated