APT1101R2BFLL
APT1101R2SFLL
1100V 10A 1.200Ω
POWER MOS 7
R
FREDFET
D3PAK
TO-247
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
VDSS
ID
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT1101R2BFLL_SFLL
UNIT
1100
Volts
Drain-Source Voltage
10
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
298
Watts
Linear Derating Factor
2.38
W/°C
PD
TJ,TSTG
40
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
10
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
30
4
mJ
1210
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
1100
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, 5A)
TYP
MAX
UNIT
Volts
1.20
Ohms
Zero Gate Voltage Drain Current (VDS = 1100V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 880V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
2-2004
Characteristic / Test Conditions
050-7185 Rev A
Symbol
APT1101R2BFLL_SFLL
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
Ciss
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
C rss
Reverse Transfer Capacitance
f = 1 MHz
Qg
Total Gate Charge
Qgs
Gate-Source Charge
3
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
RESISTIVE SWITCHING
VGS = 15V
VDD = 550V
Turn-off Delay Time
tf
ID = 10A @ 25°C
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ns
285
VDD = 733V, VGS = 15V
56
ID = 10A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
6
nC
14
RG = 1.6Ω
INDUCTIVE SWITCHING @ 25°C
6
UNIT
pF
50
90
12
60
12
7
32
ID = 10A @ 25°C
Rise Time
MAX
1900
305
VDD = 550V
td(on)
td(off)
TYP
VGS = 10V
Qgd
tr
MIN
µJ
525
VDD = 733V, VGS = 15V
ID = 10A, RG = 5Ω
70
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
(Body Diode)
40
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -10A)
1.3
Volts
18
V/ns
dv/
Peak Diode Recovery
dt
dv/
dt
10
5
Reverse Recovery Time
(IS = -10A, di/dt = 100A/µs)
Tj = 25°C
210
Tj = 125°C
710
Q rr
Reverse Recovery Charge
(IS = -10A, di/dt = 100A/µs)
Tj = 25°C
.07
Tj = 125°C
2.0
IRRM
Peak Recovery Current
(IS = -10A, di/dt = 100A/µs)
Tj = 25°C
10
Tj = 125°C
15
t rr
Amps
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.42
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.35
0.7
0.25
0.5
Note:
0.20
0.15
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7185 Rev A
2-2004
0.45
0.30
0.3
0.1
0.05
SINGLE PULSE
10-5
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.05
0
t1
t2
0.10
10-4
°C/W
4 Starting Tj = +25°C, L = 24.20mH, RG = 25Ω, Peak IL = 10A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ ID-10A di/dt ≤ 700A/µs VR ≤ 1100 TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.40
UNIT
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT1101R2BFLL_SFLL
25
RC MODEL
Junction
temp. (°C)
0.164
0.00592F
Power
(watts)
0.257
0.125F
ID, DRAIN CURRENT (AMPERES)
VGS =15 & 10V
7.5V
20
7V
15
6.5V
10
6V
5
5.5V
Case temperature. (°C)
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
20
15
TJ = -55°C
10
TJ = +25°C
5
TJ = +125°C
0
0
1
2
3
4
5
6
7
8
9
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
10
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
NORMALIZED TO
= 10V @ 5A
V
GS
1.30
VGS=10V
1.20
1.10
1.00
VGS=20V
0.90
0.80
0
2
4 6
8 10 12 14 16 18 20
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
9
8
7
6
5
4
3
2
1
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
3
I
V
D
GS
= 5A
= 10V
2.5
2.0
1.5
1.0
0.5
0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
1.40
1.1
1.0
0.9
0.8
0.7
2-2004
25
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
0.6
0.5
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7185 Rev A
ID, DRAIN CURRENT (AMPERES)
30
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
APT1101R2BFLL_SFLL
40
10,000
Ciss
10
100µS
5
1
1mS
.5
10mS
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
Coss
100
Crss
TC =+25°C
TJ =+150°C
SINGLE PULSE
.1
1
10
100
1100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I
D
= 10A
VDS= 220V
12
VDS= 550V
8
VDS= 880V
4
0
0
20
40
60
80
100 120 140
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
100
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1,000
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
50
50
td(off)
40
V
30
DD
R
G
= 733V
tr and tf (ns)
td(on) and td(off) (ns)
40
= 5Ω
T = 125°C
J
L = 100µH
20
10
V
30
DD
R
G
tf
= 733V
= 5Ω
T = 125°C
J
L = 100µH
20
tr
10
td(on)
0
0
4
1000
6
10
12
14
16
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
R
G
10
12
14
16
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
6
1000
= 733V
Eon
J
L = 100µH
Eon
EON includes
diode reverse recovery.
600
400
200
800
600
400
V
Eoff
200
0
8
10
12
14
16
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
DD
D
= 733V
= 10A
J
L = 100µH
E ON includes
diode reverse recovery.
0
6
I
T = 125°C
Eoff
4
8
= 5Ω
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
2-2004
4
T = 125°C
800
050-7185 Rev A
8
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT1101R2BFLL_SFLL
Gate Voltage
10%
90%
Gate Voltage
TJ = 125°C
td(off)
TJ = 125°C
td(on)
DrainVoltage
tr
Drain Current
90%
90%
5%
tf
5%
10%
10%
Drain Current
DrainVoltage
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
0
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF100
IC
V DD
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
3
TO-247 Package Outline
15.49 (.610)
16.26 (.640)
Drain
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
050-7185 Rev A
0.46 (.018)
0.56 (.022) {3 Plcs}
2-2004
3.50 (.138)
3.81 (.150)