APT1101RBFLL
APT1101RSFLL
1100V 13A 1.000Ω
POWER MOS 7
R
FREDFET
D3PAK
TO-247
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
VDSS
ID
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT1101RBFLL_SFLL
UNIT
1100
Volts
Drain-Source Voltage
13
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
403
Watts
Linear Derating Factor
3.23
W/°C
PD
TJ,TSTG
52
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
13
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
30
4
mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
1100
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, 6.5A)
TYP
MAX
Volts
1.00
Zero Gate Voltage Drain Current (VDS = 1100V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 880V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
3
Ohms
µA
±100
nA
5
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
11-2003
Characteristic / Test Conditions
050-7187 Rev A
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT1101RBFLL_SFLL
Test Conditions
Characteristic
Ciss
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
C rss
Reverse Transfer Capacitance
f = 1 MHz
Qg
Total Gate Charge
Qgs
Gate-Source Charge
3
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
RESISTIVE SWITCHING
VGS = 15V
VDD = 550V
Turn-off Delay Time
tf
ID = 13A @ 25°C
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ns
364
VDD = 733V, VGS = 15V
105
ID = 13A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
6
nC
14
RG = 1.6Ω
INDUCTIVE SWITCHING @ 25°C
6
UNIT
pF
65
90
12
61
12
7
32
ID = 13A @ 25°C
Rise Time
MAX
2345
388
VDD = 550V
td(on)
td(off)
TYP
VGS = 10V
Qgd
tr
MIN
µJ
748
VDD = 733V, VGS = 15V
ID = 13A, RG = 5Ω
139
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
(Body Diode)
52
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -13A)
1.3
Volts
18
V/ns
dv/
Peak Diode Recovery
dt
dv/
dt
13
5
Reverse Recovery Time
(IS = -13A, di/dt = 100A/µs)
Tj = 25°C
210
Tj = 125°C
710
Q rr
Reverse Recovery Charge
(IS = -13A, di/dt = 100A/µs)
Tj = 25°C
1.0
Tj = 125°C
3.6
IRRM
Peak Recovery Current
(IS = -13A, di/dt = 100A/µs)
Tj = 25°C
10
Tj = 125°C
14
t rr
Amps
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.31
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.25
0.7
0.20
0.5
Note:
0.10
0.3
0.05
0.1
0.05
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7187 Rev A
11-2003
0.35
0.15
t1
t2
0
10-5
SINGLE PULSE
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
°C/W
4 Starting Tj = +25°C, L = 15.38mH, RG = 25Ω, Peak IL = 13A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -13A di/dt ≤ 700A/µs VR ≤ 1100 TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.30
UNIT
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT1101RBFLL_SFLL
25
VGS =15 & 10V
0.0258
Power
(watts)
0.107
0.177
0.00295F
0.0114F
0.174F
ID, DRAIN CURRENT (AMPERES)
RC MODEL
Junction
temp. (°C)
7V
20
6.5V
15
6V
10
5.5V
5
5V
Case temperature. (°C)
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
20
15
TJ = -55°C
10
TJ = +25°C
5
TJ = +125°C
0
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
12
10
8
6
4
2
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
GS
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
2
4 6
8 10 12 14 16 18 20
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
3
I
V
D
= 6.5A
GS
= 10V
2.5
2.0
1.5
1.0
0.5
0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
NORMALIZED TO
V
= 10V @ 6.5A
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
14
1.40
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
11-2003
25
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
050-7187 Rev A
ID, DRAIN CURRENT (AMPERES)
30
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
APT1101RBFLL_SFLL
52
10,000
Ciss
10
100µS
5
1mS
1
10mS
.5
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
Coss
100
Crss
TC =+25°C
TJ =+150°C
SINGLE PULSE
.1
1
10
100
1100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I
= 6.5A
D
VDS= 220V
12
VDS= 550V
8
VDS= 880V
4
0
0
20
40
60
80
100 120 140
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
100
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1,000
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
40
60
td(off)
50
tf
40
V
DD
R
G
= 733V
tr and tf (ns)
td(on) and td(off) (ns)
30
= 5Ω
T = 125°C
J
30
L = 100µH
V
DD
R
G
20
= 733V
= 5Ω
T = 125°C
J
L = 100µH
20
10
0
0
6
1200
8
12
14
16
18
20
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
R
G
10
6
12
14
16
18
20
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1400
= 733V
J
Eon
L = 100µH
EON includes
800
I
1200
T = 125°C
diode reverse recovery.
600
400
Eoff
200
0
8
V
= 5Ω
DD
D
10
= 733V
= 13A
T = 125°C
Eon
J
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
11-2003
1000
050-7187 Rev A
tr
td(on)
10
L = 100µH
EON includes
1000
diode reverse recovery.
800
600
400
Eoff
200
0
6
8
10
12
14
16
18
20
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT1101RBFLL_SFLL
Gate Voltage
10 %
90%
TJ = 125 C
Gate Voltage
t
td(on)
T = 125 C
J
d(off)
Drain Voltage
tr
Drain Current
90%
90%
t
f
5%
5%
10 %
10%
Drain Voltage
Switching Energy
Drain Current
0
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT15DF100
IC
V DD
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
3
TO-247 Package Outline
15.49 (.610)
16.26 (.640)
Drain
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
050-7187 Rev A
0.46 (.018)
0.56 (.022) {3 Plcs}
11-2003
3.50 (.138)
3.81 (.150)