BCD APT13003D High voltage fast switching npn power transistor Datasheet

Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
General Description
Features
The APT13003D is a high voltage, high speed, high
efficiency switching transistor, and it is specially
designed for off-line switch mode power supplies with
low output power.
·
·
·
·
The APT13003D is available in TO-92 (bulk or ammo
packing), TO-126 and TO-251 packages.
Applications
·
·
APT13003D
High Switching Speed
High Collector-Emitter Voltage: 700V
Low Cost
High Efficiency
Battery Chargers for Mobile Phone of BCD Solution
Power Supply for DVD/STB of BCD Solution
TO-92(Ammo Packing)
TO-92(Bulk Packing)
TO-126
TO-251
Figure 1. Package Types of APT13003D
Jul. 2012 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003D
Pin Configuration
U Package
I Package
(TO-126)
(TO-251)
3
Emitter
Collector
2
Collector
Base
1
3
Emitter
2
1
Base
(Front View)
(Front View)
Z Package
(TO-92 (Bulk Packing))
(TO-92 (Ammo Packing))
3
Base
3
Base
2
Collector
2
Collector
1
Emitter
1
Emitter
(Top View)
(Top View)
Figure 2. Pin Configuration of APT13003D
Internal Structure
Collector
Base
Emitter
Figure 3. Internal Structure of APT13003D
Jul. 2012 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
2
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003D
Ordering Information
APT13003D
-
Circuit Type
G1: Green
Package
U: TO-126
Z: TO-92
I: TO-251
Package
TO-126
TO-92
TO-251
Blank: Tube or Bulk
TR: Ammo
Part Number
Marking ID
Packing Type
APT13003DU-G1
GU13003D
Bulk
APT13003DZ-G1
13003DZ-G1
Bulk
APT13003DZTR-G1
13003DZ-G1
Ammo
APT13003DI-G1
APT13003DI-G1
Tube
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and green.
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
VCES
700
V
VCEO(sus)
450
V
VEBO
9
V
IC
1.5
A
ICM
3.0
A
IB
0.75
A
IBM
1.5
A
Collector-Emitter Voltage (VBE=0)
Collector-Emitter Voltage (IB=0)
Emitter-Base Breakdown Voltage (IC=0)
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Power Dissipation (TA=25oC)
Power Dissipation (TC=25oC)
For TO-92
1.1
PTOT
For TO-251
For TO-126
24
W
20
Operating Junction Temperature
Storage Temperature Range
TJ
150
oC
TSTG
-55 to 150
oC
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Jul. 2012 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
3
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003D
Thermal Characteristics
Parameter
Symbol
Value
For TO-126
Maximum Thermal Resistance
(Junction to Case)
6.25
θJC
For TO-251
Maximum Thermal Resistance
(Junction to Ambient)
Unit
For TO-92
83.3
For TO-126
96
θJA
For TO-251
oC/W
5.0
oC/W
110
For TO-92
113.6
Electrical Characteristics
( TC=25oC, unless otherwise specified.)
Parameter
Collector Cut-off Current (VBE=-1.5V)
Symbol
Condition
ICEV
VCE=700V
Collector-Emitter Sustaining (IB=0)
VCEO (sus)
IC=100µA
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
DC Current Gain (Note 2)
hFE
Turn-on Time with Resistive Load
ton
Storage Time with Resistive Load
ts
Fall Time with Resistive Load
tf
Output Capacitance
Current Gain Bandwidth Product
COB
fT
Min
Typ
Max
Unit
10
µA
450
V
IC= 0.5A, IB=0.1A
0.3
IC=1.0A, IB=0.25A
0.4
IC=0.5A, IB=0.1A
1.0
IC=1.0A, IB=0.25A
1.2
IC=0.5A, VCE=2.0V
16
30
IC=1.0A, VCE=2.0V
5.0
25
IC=1.0A, VCC=125V
IB1=0.2A, IB2=-0.2A
VCB=10V, f=0.1MHz
VCE=10V, IC=0.1A
18
4
V
V
0.7
µs
3.0
µs
0.35
µs
pF
MH
Note 2: Pulse test for Pulse Width≤ 300µs, Duty Cycle ≤ 2%.
Jul. 2012 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003D
Typical Performance Characteristics
10
10
DC
1
Collector Current IC(A)
Collector Current IC(A)
DC
1
0.1
0.1
0.01
o
TC=25 C
0.01
1
10
100
o
TC=25 C
1E-3
1000
1
10
Collector-Emitter Clamp Voltage VCE(V)
1000
Collector-Emitter Clamp Voltage VCE(V)
Figure 4. Safe Operating Areas
(TO-126 Package)
Figure 5. Safe Operating Areas
(TO-92 Package)
10
125
100
Power Derating Factor (%)
DC
Collector Current IC(A)
100
1
0.1
75
50
25
o
TC=25 C
0.01
1
10
100
0
1000
Collector-Emitter Clamp Voltage VCE(V)
0
25
50
75
100
125
150
175
200
o
Case Temperature ( C)
Figure 6. Safe Operating Areas
(TO-251 Package)
Figure 7. Power Derating Curve
Jul. 2012 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
5
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003D
Typical Performance Characteristics (Continued)
1.6
35
IB=200mA
IB=180mA
IB=160mA
IB=140mA
1.2
30
o
TJ=125 C
IB=120mA
DC Current Gain
Colltector Current IC (A)
1.4
IB=100mA
1.0
IB=80mA
IB=60mA
0.8
IB=40mA
0.6
o
TJ=25 C
15
5
0.2
0.0
0.0
20
10
IB=20mA
0.4
VCE=2V
25
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
0.01
4.0
Collector-Emitter Voltage VCE(V)
0.1
1
10
Collector Current IC(A)
Figure 8. Static Characterstics
Figure 9. DC Current Gain
10
Base-Emitter Voltage VBE(V)
Collector-Emitter Voltage VCE(V)
1.20
HFE=5
1
o
TJ=125 C
o
TJ=25 C
0.1
HFE=5
1.05
o
TJ=25 C
0.90
o
TJ=125 C
0.75
0.60
0.01
0.1
1
0.1
10
1
10
Collector Current IC(A)
Collector Current IC(A)
Figure 10. Collector-Emitter Saturation Region
Figure 11. Base-Emitter Saturation Voltage
Jul. 2012 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
6
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003D
Mechanical Dimensions
0.000(0.000)
0.300(0.012)
2.400(0.094)
2.900(0.114)
1.060(0.042)
1.500(0.059)
3.900(0.154)
7.400(0.291)
8.200(0.323)
10.600(0.417)
11.200(0.440)
Unit: mm(inch)
3.600(0.142)
TO-126
Φ 3.100(0.122)
3.550(0.140)
1.170(0.046)
1.470(0.058)
2.100(0.083)
1.700(0.067)
14.500(0.570)
15.900(0.626)
0.660(0.026)
4.560(0.180)
TYP.
0.860(0.034)
2.280(0.090)
TYP
Jul. 2012 Rev. 1. 2
0.400(0.016)
0.600(0.024)
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003D
Mechanical Dimensions (Continued)
TO-92 (Bulk Packing)
Unit: mm(inch)
1.000(0. 039)
3.430(0.135)
MIN
3.700(0.146)
3.300(0.130)
1.400(0.055)
0.320(0. 013)
0.510(0. 020)
0. 000(0. 000)
0. 380(0. 015)
Φ1. 600(0. 063)
MAX
4.700(0.185)
1.270(0. 050)
TYP
15.500(0.610)
0.360(0. 014)
0.760(0. 030)
12.500(0.492)
4.300(0.169)
4.400(0.173)
4.800(0.189)
2.420(0. 095)
2.660(0.105)
Jul. 2012 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
8
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003D
Mechanical Dimensions (Continued)
TO-92 (Ammo Packing)
Unit: mm(inch)
1. 100(0. 043)
3. 430(0.135)
MIN
1.270(0.050)
Typ
2.500(0.098)
4.000 (0.157 )
0. 000(0.000)
0. 380(0.015)
Φ1. 600(0. 063)
MAX
14.500(0.571)
12.500(0.492)
0.320(0. 013)
0. 510(0. 020)
3.800(0.150)
3.300(0.130)
1. 400(0.055)
4.700(0.185)
4.300(0.169)
4.400(0.173)
4.800 (0.189 )
13.000(0. 512)
15.000 (0.591 )
0.380(0.015)
0.550(0.022 )
2.540(0.100)
Typ
Jul. 2012 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
9
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003D
Mechanical Dimensions (Continued)
Unit: mm(inch)
6.450(0.254)
6.750(0.266)
2. 200(0. 087)
2. 400(0. 094)
5. 200(0. 205)
5. 400( 0. 213)
0. 450(0. 018)
0. 550( 0. 022)
9.000(0.354)
9.400(0.370)
5.950 (0.234)
6.250 (0.246)
0.950(0.037)
1.250(0.049)
TO-251
0. 640 (0.025 )
0. 740 (0.029 )
4.430 (0. 174)
4.730 ( 0. 186 )
0. 450(0. 018)
0. 550(0. 022)
2. 240(0. 088 )
2. 340(0.092)
0.950(0.037)
1.150(0.045)
Jul. 2012 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
10
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