Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13005 series are high voltage, high speed, high efficiency switching transistor, and it is specially designed for off-line switch mode power supplies with low output power. · · · · The APT13005 series is available in TO-220-3, TO220-3(2), and TO-220F-3 packages. Applications · · TO-220F-3 APT13005 High Switching Speed High Collector-Emitter Voltage: 700V Low Cost High Efficency Battery Chargers for Mobile Phone Power Supply for DVD/STB TO-220-3 TO-220-3(2) Figure 1. Package Types of APT13005 Aug. 2010 Rev 1. 1 BCD Semiconductor Manufacturing Limited 1 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13005 Pin Configuration T Package (TO-220-3) (TO-220-3(2)) 3 Emitter 3 Emitter 2 Collector 2 Collector 1 Base 1 Base TF Package (TO-220F-3) 3 Emitter 2 Collector 1 Base Figure 2. Pin Configuration of APT13005(front view) Collector Base Emitter Figure 3. Internal Structure of APT13005 Aug. 2010 Rev 1. 1 BCD Semiconductor Manufacturing Limited 2 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13005 Ordering Information APT13005 - Circuit Type E1: Lead Free G1: Green Package T: TO-220-3/TO-220-3(2) TF: TO-220F-3 Part Number Package TO-220-3/ TO-220-3(2) TO-220F-3 Blank: Tube Marking ID Green Lead Free Green Lead Free Packing Type APT13005T-E1 APT13005T-G1 APT13005T-E1 APT13005T-G1 Tube APT13005TF-E1 APT13005TF-G1 APT13005TF-E1 APT13005TF-G1 Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with D packages. "G1" suffix are available in green Absolute Maximum Ratings (Note 1) ParameterDD DD Symbol Value Unit Collector-Emitter Voltage (VBE=0) VCES 700 V Collector-Emitter Voltage (IB=0) VCEO 450 V Emitter-Base Breakdown Voltage (IC=0) VEBO 9 V IC 4 A ICM 8 A IB 2 A IBM 4 A Collector Current Collector Peak Current Base Current Base Peak Current Power Dissipation, TC=25oC TO-220-3/ TO-220-3 (2) PTOT TO-220F-3 75 W 28 Operating Junction Temperature 150 Storage Temperature Range -65 to 150 o C oC Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Aug. 2010 Rev 1. 1 BCD Semiconductor Manufacturing Limited 3 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13005 Thermal Characteristics Parameter Symbol Maximum Thermal Resistance Condition θJC Junction to Case Value TO-220-3/ TO-220-3(2) 1.67 TO-220F-3 4.5 Unit o C/W Electrical Characteristics ( TC=25oC, unless otherwise specified.) Parameter Collector Cut-off Current (VBE=-1.5V) Collector-Emitter Sustaining Voltage (IB=0) (Note 2) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Symbol ICEV VCE=700V VCEO (sus) IC=100µA VCE(sat) VBE(sat) DC Current Gain (Note 2) hFE Turn -on Time with Resistive Load ton Storage Time with Resistive Load ts Fall Time with Resistive Load tf Output Capacitance Current Gain Bandwidth Product Conditions COB fT Min Typ Max Unit 10 µA 450 V IC=1.0A, IB=0.2A 0.3 IC=2.0A, IB=0.5A 0.6 IC=4.0A, IB=1.0A 0.9 IC=1.0A, IB=0.2A 1.1 IC=2.0A, IB=0.5A 1.3 V IC=1.0A, VCE=5.0V 15 35 IC=2.0A, VCE=5.0V 8 35 IC=2A, VCC=125V IBI=0.4A, IB2=-0.4V VCB=10V, f=0.1MHz VCE=10V, IC=0.5A V 45 4 0.8 µs 4.5 µs 0.9 µs pF MHz Note 2: Pulse test for Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Aug. 2010 Rev 1. 1 BCD Semiconductor Manufacturing Limited 4 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13005 Typical Performance Characteristics 10 DC 1 Collector Current IC(A) Collector Current IC(A) 10 0.1 DC 1 0.1 o o TC=25 C TC=25 C 0.01 1 10 100 D Collector-Emitter clamp Voltage V 0.01 1 1000 10 100 1000 Collector-Emitter clamp Voltage VCE(V) (V) CE Figure DD 4. Safe Operating Areas DD(TO-220-3/TO-220-3(2) Package) Figure 5. Safe Operating Areas (TO-220F-3 Package) 4.5 125 IB=500mA 4.0 IB=450mA IB=400mA IB=350mA Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α 75 50 25 3.0 Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α IB=200mA Α Α Α Α Α Α Α Α 2.5 Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α IB=250mA Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Collector Current IC(A) Power Derating Factor(%) Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α IB=300mA Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α 3.5 Α Α Α Α Α Α Α 100 Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α 2.0 IB=150mA Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α 1.5 Α Α IB=100mA Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α ΑΑ Α Α Α Α Α Α ΑΑ Α 1.0 Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α ΑΑ ΑΑ Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α IB=50mA Α Α Α Α Α Α Α Α Α Α ΑΑ Α Α 0.5 Α Α ΑΑ Α Α ΑΑ Α Α Α ΑΑΑ ΑΑ Α Α ΑΑ 0 0 25 50 75 100 125 150 175 0.0 0 200 1 2 3 4 5 6 7 8 Collector-Emitter Voltage VCE(V) o Case Temperature( C) Figure 6. Power Derating Curve Figure 7. Static Characterstics Aug. 2010 Rev 1. 1 BCD Semiconductor Manufacturing Limited 5 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13005 Typical Performance Characteristics (Continued) 40 1 o 35 TJ=125 C HFE=4 Collector-Emitter Voltage VCE(V) VCE=5V DC Current Gain 30 25 o TJ=25 C 20 15 10 5 0 0.01 0.1 1 o TJ=125 C o TJ=25 C 0.1 0.01 0.1 10 1 10 Collector Current IC(A) Collector Current IC(A) Figure 9. Collector-Emitter Saturation Region Figure 8. DC Current Gain 1.2 HFE=4 Base-Emitter Voltage VBE(V) 1.1 1.0 o TJ=25 C 0.9 0.8 o TJ=125 C 0.7 0.6 0.5 0.1 1 10 Collector Current IC(A) Figure 10. Base-Emitter Saturation Voltage Aug. 2010 Rev 1. 1 BCD Semiconductor Manufacturing Limited 6 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13005 Mechanical Dimensions TO-220-3 2.580(0.102) 3.380(0.133) 0.550(0.022) 1.350(0.053) D DD D 1.160(0.046) 1.760(0.069) 14.230(0.560) 16.510(0.650) φ1.500(0.059) 27.880(1.098) 30.280(1.192) D 8.520(0.335) 9.520(0.375) 1.850(0.073) 9.660(0.380) 10.660(0.420) φ3.560(0.140) 4.060(0.160) Unit: mm(inch) 3° 0.200(0.008) 7° 3.560(0.140) 4.820(0.190) 2.080(0.082) 2.880(0.113) 7° 0.381(0.015) 60° 0.813(0.032) 8.763(0.345) 60° 0.381(0.015) 2.540(0.100) 2.540(0.100) Aug. 2010 Rev 1. 1 0.356(0.014) 0.406(0.016) BCD Semiconductor Manufacturing Limited 7 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13005 Mechanical Dimensions (Continued) TO-220-3 (2) Unit: mm(inch) 9.800(0.386) 10.200(0.402) ∅ 3.560(0.140) 3.640(0.143) 0.600(0.024) 1.300(0.051) 1.300(0.051) 11.100(0.437) 6.300(0.248) 6.700(0.264) 1.700(0.067) 9.000(0.354) 9.400(0.370) 3° 4.500(0.177) 2.400(0.094) 3° 3° 0.700(0.028) 0.900(0.035) 2.540(0.100) 12.600(0.496) 13.600(0.535) 9.600(0.378) 10.600(0.417) 1.270(0.050) 0.400(0.016) 0.600(0.024) 2.540(0.100) Aug. 2010 Rev 1. 1 BCD Semiconductor Manufacturing Limited 8 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13005 Mechanical Dimensions (Continued) TO-220F-3 9.700(0.382) 10.300(0.406) 3.000(0.119) 3.400(0.134) 6.900(0.272) 7.100(0.280) ∅ ٛ 3.000(0.119) 3.550(0.140) Unit: mm(inch) 2.350(0.093) 2.900(0.114) 3.370(0.133) 3.900(0.154) D 14.700(0.579) 16.000(0.630) 2.790(0.110) 4.500(0.177) D DD D 4.300(0.169) 4.900(0.075) 1.000(0.039) 1.400(0.055) 1.100(0.043) 1.500(0.059) 12.500(0.492) 13.500(0.531) 0.550(0.022) 0.900(0.035) 2.540(0.100) 2.540(0.100) Aug. 2010 Rev 1. 1 0.450(0.018) 0.600(0.024) BCD Semiconductor Manufacturing Limited 9 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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