APT14F100B
APT14F100S
1000V, 14A, 1.00Ω Max, trr ≤240ns
N-Channel FREDFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
TO
-2
47
D3PAK
APT14F100B
APT14F100S
D
Single die FREDFET
G
S
TYPICAL APPLICATIONS
FEATURES
• Fast switching with low EMI
• ZVS phase shifted and other full bridge
• Low trr for high reliability
• Half bridge
• Ultra low Crss for improved noise immunity
• PFC and other boost converter
• Low gate charge
• Buck converter
• Avalanche energy rated
• Single and two switch forward
• RoHS compliant
• Flyback
Absolute Maximum Ratings
Symbol
ID
Parameter
Unit
Ratings
Continuous Drain Current @ TC = 25°C
14
Continuous Drain Current @ TC = 100°C
9
A
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy 2
875
mJ
IAR
Avalanche Current, Repetitive or Non-Repetitive
7
A
1
55
Thermal and Mechanical Characteristics
Min
Characteristic
Typ
Max
Unit
W
PD
Total Power Dissipation @ TC = 25°C
500
RθJC
Junction to Case Thermal Resistance
0.25
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
150
°C
Soldering Temperature for 10 Seconds (1.6mm from case)
WT
Package Weight
300
0.22
oz
6.2
g
10
in·lbf
1.1
N·m
Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Microsemi Website - http://www.microsemi.com
9-2007
TL
Torque
-55
Rev A
TJ,TSTG
°C/W
0.11
050-8160
Symbol
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol
Parameter
VBR(DSS)
Drain-Source Breakdown Voltage
ΔVBR(DSS)/ΔTJ
Breakdown Voltage Temperature Coefficient
RDS(on)
Drain-Source On Resistance
VGS(th)
Gate-Source Threshold Voltage
ΔVGS(th)/ΔTJ
VGS = 10V, ID = 7A
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
Dynamic Characteristics
VDS = 1000V
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Typ
Max
1.15
0.84
4
-10
1.00
5
TJ = 25°C
VGS = 0V
250
1000
±100
TJ = 125°C
VGS = ±30V
Unit
V
V/°C
Ω
V
mV/°C
µA
nA
TJ = 25°C unless otherwise specified
Parameter
Forward Transconductance
3
VGS = VDS, ID = 1mA
Threshold Voltage Temperature Coefficient
gfs
Min
1000
3
IDSS
Symbol
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 250µA
APT14F100B_S
Min
Test Conditions
VDS = 50V, ID = 7A
4
Effective Output Capacitance, Charge Related
Co(er)
5
Effective Output Capacitance, Energy Related
Max
16
3965
55
335
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr)
Typ
Unit
S
pF
135
VGS = 0V, VDS = 0V to 667V
70
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
Resistive Switching
Current Rise Time
VDD = 667V, ID = 7A
tr
td(off)
tf
Turn-Off Delay Time
120
21
60
28
29
95
26
VGS = 0 to 10V, ID = 7A,
VDS = 500V
RG = 4.7Ω 6 , VGG = 15V
Current Fall Time
nC
ns
Source-Drain Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irrm
Reverse Recovery Current
dv/dt
Peak Recovery dv/dt
Test Conditions
Min
Typ
D
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
A
56
S
TJ = 25°C
TJ = 125°C
TJ = 25°C
diSD/dt = 100A/µs
TJ = 125°C
VDD = 100V
TJ = 25°C
Unit
14
G
ISD = 7A, TJ = 25°C, VGS = 0V
ISD = 7A 3
Max
TJ = 125°C
ISD ≤ 7A, di/dt ≤1000A/µs, VDD = 400V,
TJ = 125°C
205
355
0.90
2.20
8.90
12.90
1.0
240
430
V
ns
µC
A
25
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 35.71mH, RG = 25Ω, IAS = 7A.
050-8160
Rev A
9-2007
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -1.15E-7/VDS^2 + 2.03E-8/VDS + 3.93E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT14F100B_S
40
14
V
GS
= 10V
T = 125°C
J
35
12
ID, DRIAN CURRENT (A)
ID, DRAIN CURRENT (A)
V
30
TJ = -55°C
25
20
TJ = 25°C
15
10
TJ = 125°C
5
0
10
8
6
5V
4
2
TJ = 150°C
0
0
5
10
15
20
25
30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
4.5V
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
60
NORMALIZED TO
VDS> ID(ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS = 10V @ 7A
50
2.5
ID, DRAIN CURRENT (A)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
Figure 1, Output Characteristics
3.0
= 6, 7, 8 & 9V
GS
2.0
1.5
1.0
40
TJ = -55°C
30
TJ = 25°C
20
TJ = 125°C
10
0.5
0
0
-55 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
6,000
20
Ciss
16
TJ = -55°C
C, CAPACITANCE (pF)
gfs, TRANSCONDUCTANCE
18
14
TJ = 25°C
12
TJ = 125°C
10
8
6
1000
100
Coss
4
2
Crss
10
0
0
2
4
6
8
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
10
0
200
400
600
800
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
16
60
VDS = 500V
8
6
VDS = 800V
4
2
0
40
TJ = 25°C
30
TJ = 150°C
20
9-2007
VDS = 200V
10
50
10
0
0
20
40 60 80 100 120 140 160 180
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
Rev A
12
050-8160
14
ISD, REVERSE DRAIN CURRENT (A)
VGS, GATE-TO-SOURCE VOLTAGE (V)
ID = 7A
APT14F100B_S
100
IDM
10
13µs
100µs
1ms
1
10ms
Rds(on)
10
100µs
Rds(on)
Scaling for Different Case & Junction
Temperatures:
ID = ID(T = 25°C)*(TJ - TC)/125
1
DC line
0.1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
C
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
TJ (°C)
1
TC (°C)
0.0974
0.153
Dissipated Power
(Watts)
0.0022
ZEXT
0.1
1ms
10ms
100ms
DC line
TJ = 150°C
TC = 25°C
1
100ms
TJ = 125°C
TC = 75°C
13µs
IDM
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
100
0.209
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Figure 11, Transient Thermal Impedance Model
0.25
D = 0.9
0.20
0.7
0.15
Note:
0.5
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
0.30
0.10
t1
t2
0.3
t1 = Pulse Duration
SINGLE PULSE
0.05
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.1
0
0.05
10-5
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (seconds)
Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
1.0
D3PAK Package Outline
TO-247 (B) Package Outline
15.49 (.610)
16.26 (.640)
Drain
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
e3 100% Sn Plated
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
13.79 (.543)
13.99(.551)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
13.41 (.528)
13.51(.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022) {3 Plcs}
050-8160
Rev A
9-2007
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
Drain
Gate
Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated