1
3
TO
-24
7
2
1 - Anode 1
2 - Common Cathode
Back of Case - Cathode
3 - Anode 2
APT15D100BCT
1
2
1000V
2x15A
3
ULTRAFAST SOFT RECOVERY RECTIFIER DIODES
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Parallel Diode
• Ultrafast Recovery Times
• Low Losses
• Soft Recovery Characteristics
• Low Noise Switching
• Popular TO-247 Package
• Cooler Operation
• Low Forward Voltage
• Higher Reliability Systems
• High Blocking Voltage
• Increased System Power
•
•
•
•
•
-Switchmode Power Supply
-Inverters
Free Wheeling Diode
-Motor Controllers
-Converters
Snubber Diode
Uninterruptible Power Supply (UPS)
Induction Heating
High Speed Rectifiers
MAXIMUM RATINGS
Symbol
VR
Density
• Low Leakage Current
All Ratings Are Per Leg: TC = 25°C unless otherwise specified.
Characteristic / Test Conditions
APT15D100BCT
UNIT
1000
Volts
Maximum D.C. Reverse Voltage
VRRM
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 90°C, Duty Cycle = 0.5)
15
RMS Forward Current
25
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
80
IF(RMS)
IFSM
TJ,TSTG
TL
Amps
-55 to 150
Operating and StorageTemperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
MIN
TYP
IRM
2.4
IF = 30A
Maximum Forward Voltage
Maximum Reverse Leakage Current
UNIT
2.3
IF = 15A
VF
MAX
Volts
IF = 15A, TJ = 150°C
1.9
VR = VR Rated
250
VR = VR Rated, TJ = 125°C
500
µA
CT
Junction Capacitance, VR = 200V
12
pF
LS
Series Inductance (Lead to Lead 5mm from Base)
10
nH
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
053-0013 Rev -
Symbol
APT15D100BCT
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
75
trr1
Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/µs, VR = 30V, TJ = 25°C
60
trr2
Reverse Recovery Time
TJ = 25°C
60
trr3
IF = 15A, diF /dt = -100A/µs, VR = 540V
TJ = 100°C
120
tfr1
Forward Recovery Time
TJ = 25°C
180
tfr2
IF = 15A, diF /dt = 100A/µs, VR = 540V
TJ = 100°C
180
IRRM1
Reverse Recovery Current
TJ = 25°C
3.8
7
IRRM2
IF = 15A, diF /dt = -100A/µs, VR = 540V
TJ = 100°C
4.5
9
Qrr1
Recovery Charge
TJ = 25°C
114
Qrr2
IF = 15A, diF /dt = -100A/µs, VR = 540V
TJ = 100°C
270
Vfr1
Forward Recovery Voltage
TJ = 25°C
5.8
Vfr2
IF = 15A, diF /dt = 100A/µs, VR = 540V
TJ = 100°C
5.8
Rate of Fall of Recovery Current
TJ = 25°C
100
IF = 15A, diF /dt = -100A/µs, VR =540V (See Figure 10)
TJ = 100°C
50
diM/dt
UNIT
ns
Amps
nC
Volts
A/µs
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
RθJC
Junction-to-Case Thermal Resistance
1.7
RθJA
Junction-to-Ambient Thermal Resistance
80
WT
Torque
UNIT
MAX
°C/W
0.07
oz
1.9
gm
Package Weight
6.4
lb•in
0.7
N•m
Maximum Mounting Torque (Screw Type = 6-32 or 3.5mm Machine)
2.0
D=0.5
0.5
0.2
0.1
0.1
0.05
0.05
0.02
NOTE:
0.01
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
1.0
t1
SINGLE PULSE
DUTY FACTOR D = t1 / t2
053-0013 Rev -
0.01
0.005
10-5
t2
PEAK TJ =PDM x Z JC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
APT15D100BCT
60
Qrr, REVERSE RECOVERY CHARGE
(nano-COULOMBS)
2500
40
30
20
TJ = 25°C
TJ = 150°C
TJ = -55°C
TJ = 100°C
10
0
0
1
2
3
4
VF, ANODE-TO-CATHODE VOLTAGE (VOLTS)
Figure 2, Forward Voltage Drop vs Forward Current
2000
30A
1500
15A
1000
500
7.5A
0
10
50
100
500 1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 3, Reverse Recovery Charge vs Current Slew Rate
2.0
50
TJ = 100°C
VR = 540V
30A
40
Kf, DYNAMIC PARAMETERS
(NORMALIZED)
IRRM, REVERSE RECOVERY CURRENT
(AMPERES)
TJ = 100°C
VR = 540V
15A
30
7.5A
20
10
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 4, Reverse Recovery Current vs Current Slew Rate
1.6
Qrr
trr
1.2
0.8
0.4
0.0
Qrr
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5, Dynamic Parameters vs Junction Temperature
-50
TJ = 100°C
VR = 540V
IF = 15A
tfr, FORWARD RECOVERY TIME
(nano-SECONDS)
trr, REVERSE RECOVERY TIME
(nano-SECONDS)
TJ = 100°C
VR = 540V
30A
15A
120
80
400
200
160
IRRM
trr
7.5A
80
40
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 6, Reverse Recovery Time vs Current Slew Rate
60
300
Vfr
200
40
20
100
tfr
Vfr, FORWARD RECOVERY VOLTAGE
(VOLTS)
IF, FORWARD CURRENT
(AMPERES)
50
0
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 7, Forward Recovery Voltage/Time vs Current Slew Rate
100
50
10
0.01
0.05
0.1
Figure 8, Junction Capacitance vs Reverse Voltage
0.5
1
5
VR, REVERSE VOLTAGE (VOLTS)
10
50
100
200
053-0013 Rev -
CJ, JUNCTION CAPACITANCE
(pico-FARADS)
200
APT15D100BCT
Vr
D.U.T.
trr/Qrr
Waveform
30µH
PEARSON 411
CURRENT
TRANSFORMER
+15v
diF /dt Adjust
0v
-15v
Figure 9, Diode Reverse Recovery Test Circuit and Waveforms
1
IF - Forward Conduction Current
2
diF /dt - Current Slew Rate, Rate of Forward
Current Change Through Zero Crossing.
3
IRRM - Peak Reverse Recovery Current.
4
trr - Reverse Recovery Time Measured from Point of IF
1
4
6
Zero
5
3
Current Falling Through Zero to a Tangent Line { 6 diM/dt}
Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM.
0.5 IRRM
0.75 IRRM
2
5
Qrr - Area Under the Curve Defined by IRRM and trr.
6
diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
Qrr = 1/2 (trr . IRRM)
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247AD Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Common Cathode
20.80 (.819)
21.46 (.845)
3.55 (.140)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Anode 1
Common Cathode
Anode 2
053-0013 Rev -
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT Reserves the right to change, without notice, the specifications and information contained herein.