Microsemi APT15DQ100KG Ultrafast soft recovery rectifier diode Datasheet

1000V 15A
APT15DQ100K
APT15DQ100KG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
(K)
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
-Inverters
• Snubber Diode
• Ultrafast Recovery Times
• Low Losses
• Soft Recovery Characteristics
• Low Noise Switching
• Popular TO-220 Package
• Cooler Operation
• Low Forward Voltage
• Higher Reliability Systems
• Low Leakage Current
• Increased System Power
Density
• PFC
• Avalanche Energy Rated
TO-220
1
2
2
1
1 - Cathode
2 - Anode
Back of Case - Cathode
MAXIMUM RATINGS
Symbol
VR
All Ratings: TC = 25°C unless otherwise specified.
Characteristic / Test Conditions
APT15DQ100K(G)
UNIT
1000
Volts
Maximum D.C. Reverse Voltage
VRRM
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 126°C, Duty Cycle = 0.5)
15
RMS Forward Current (Square wave, 50% duty)
29
IFSM
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
80
EAVL
Avalanche Energy (1A, 40mH)
20
IF(RMS)
TJ,TSTG
TL
Amps
mJ
-55 to 175
Operating and StorageTemperature Range
°C
300
Lead Temperature for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance, VR = 200V
MIN
TYP
MAX
IF = 15A
2.5
3.0
IF = 30A
3.06
IF = 15A, TJ = 125°C
1.92
Volts
VR = 1000V
100
VR = 1000V, TJ = 125°C
500
Microsemi Website - http://www.microsemi.com
12
UNIT
µA
pF
7-2006
VF
Characteristic / Test Conditions
053-4226 Rev B
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT15DQ100K(G)
Characteristic
Test Conditions
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 15A, diF/dt = -200A/µs
VR = 667V, TC = 125°C
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
VR = 667V, TC = 25°C
Maximum Reverse Recovery Current
trr
IRRM
IF = 15A, diF/dt = -200A/µs
IF = 15A, diF/dt = -1000A/µs
VR = 667V, TC = 125°C
Maximum Reverse Recovery Current
MIN
TYP
MAX
UNIT
-
20
-
235
-
185
-
3
-
300
ns
-
810
nC
-
6
-
125
ns
-
1150
nC
-
19
Amps
MIN
TYP
ns
nC
-
-
Amps
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
RθJC
WT
Torque
Characteristic / Test Conditions
MAX
UNIT
1.18
°C/W
Junction-to-Case Thermal Resistance
Package Weight
0.07
oz
1.9
g
Maximum Mounting Torque
10
lb•in
1.1
N•m
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
D = 0.9
1.00
0.7
0.60
0.5
0.40
0.3
Note:
PDM
0.80
0.20
0
t
0.1
0.05
10
-5
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
7-2006
TJ (°C)
053-4226 Rev B
t1
t2
TC (°C)
0.676
0.504
Dissipated Power
(Watts)
0.00147
0.0440
ZEXT
Z JC, THERMAL IMPEDANCE (°C/W)
θ
1.20
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
400
40
350
35
30
TJ = 175°C
25
20
TJ = 125°C
15
TJ = 25°C
10
TJ = -55°C
5
0
0
1
2
3
4
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
Qrr, REVERSE RECOVERY CHARGE
(nC)
2000
T = 125°C
J
V = 667V
1800
R
1600
30A
1400
1200
1000
15A
800
600
7.5A
400
200
0
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
trr
15A
250
200
7.5A
150
100
25
T = 125°C
J
V = 667V
R
30A
20
15
15A
10
7.5A
5
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
35
Duty cycle = 0.5
T = 175°C
J
30
25
Qrr
0.2
0.0
300
0
IRRM
0.6
0.4
R
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
trr
0.8
T = 125°C
J
V = 667V
30A
0
Qrr
1.0
APT15DQ100K(G)
50
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/µs)
1.2
trr, REVERSE RECOVERY TIME
(ns)
45
IRRM, REVERSE RECOVERY CURRENT
(A)
IF, FORWARD CURRENT
(A)
TYPICAL PERFORMANCE CURVES
20
15
10
5
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
0
25
50
75
100
125
150
175
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
70
60
50
40
7-2006
30
20
10
0
1
10
100 200
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
053-4226 Rev B
CJ, JUNCTION CAPACITANCE
(pF)
80
APT15DQ100K(G)
Vr
diF /dt Adjust
+18V
APT10035LLL
0V
D.U.T.
30µH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
3
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-220 (K) Package Outline
e3 100% Sn
10.66 (.420)
9.66 (.380)
1.39 (.055)
0.51 (.020)
12.192 (.480)
9.912 (.390)
Cathode
4.08 (.161) Dia.
3.54 (.139)
3.42 (.135)
2.54 (.100)
053-4226 Rev B
7-2006
0.080 (2.032)
MAX.
0.50 (.020)
0.41 (.016)
2.92 (.115)
2.04 (.080)
4.82 (.190)
3.56 (.140)
5.33 (.210)
4.83 (.190)
6.85 (.270)
5.85 (.230)
3.683 (.145)
MAX.
14.73 (.580)
12.70 (.500)
Cathode
Anode
1.01 (.040) 2-Plcs.
.83 (.033)
5.33 (.210)
4.83 (.190)
1.77 (.070) 2-Plcs.
1.15 (.045)
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
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0.25 IRRM
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