Microsemi APT15DQ60K Ultrafast soft recovery rectifier diode Datasheet

600V 15A
APT15DQ60K
APT15DQ60KG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
(K)
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
-Inverters
• Snubber Diode
• Ultrafast Recovery Times
• Low Losses
• Soft Recovery Characteristics
• Low Noise Switching
• Popular TO-220 Package
• Cooler Operation
• Low Forward Voltage
• Higher Reliability Systems
• Low Leakage Current
• Increased System Power
Density
• PFC
1
2
2
1
• Avalanche Energy Rated
1 - Cathode
2 - Anode
Back of Case - Cathode
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
VR
Characteristic / Test Conditions
APT15DQ60K(G)
UNIT
600
Volts
Maximum D.C. Reverse Voltage
VRRM
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 129°C, Duty Cycle = 0.5)
15
RMS Forward Current (Square wave, 50% duty)
30
IFSM
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
110
EAVL
Avalanche Energy (1A, 40mH)
20
IF(RMS)
TJ,TSTG
TL
Amps
mJ
-55 to 175
Operating and StorageTemperature Range
°C
300
Lead Temperature for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
VF
Characteristic / Test Conditions
Forward Voltage
MIN
TYP
MAX
IF = 15A
2.0
2.4
IF = 30A
2.5
IF = 15A, TJ = 125°C
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance, VR = 200V
Volts
1.56
VR = 600V
25
VR = 600V, TJ = 125°C
Microsemi Website - http://www.microsemi.com
UNIT
μA
500
25
pF
053-4205 Rev F 2-2010
Symbol
APT15DQ60K(G)
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Time
Qrr
Reverse Recovery Charge
trr
Qrr
IRRM
IF = 15A, diF/dt = -200A/μs
VR = 400V, TC = 25°C
Maximum Reverse Recovery Current
trr
IRRM
IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
IF = 15A, diF/dt = -200A/μs
Maximum Reverse Recovery Current
VR = 400V, TC = 125°C
Reverse Recovery Time
IF = 15A, diF/dt = -1000A/μs
Reverse Recovery Charge
Maximum Reverse Recovery Current
VR = 400V, TC = 125°C
MIN
TYP
MAX
UNIT
-
15
-
19
-
21
-
2
-
105
ns
-
250
nC
-
5
-
55
ns
-
420
nC
-
15
Amps
MIN
TYP
ns
nC
-
-
Amps
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R θJC
WT
Torque
Characteristic / Test Conditions
MAX
UNIT
1.35
°C/W
Junction-to-Case Thermal Resistance
Package Weight
0.07
oz
1.2
g
Maximum Mounting Torque
10
lb•in
1.1
N•m
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
1.00
0.7
0.80
0.5
Note:
0.60
0.3
0.40
t1
t2
0.20
0
053-4205 Rev F 2-2010
D = 0.9
1.20
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
1.40
t
0.1
SINGLE PULSE
0.05
10
-5
10-4
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
APT15DQ60K(G)
60
140
50
120
trr, REVERSE RECOVERY TIME
(ns)
IF, FORWARD CURRENT
(A)
TYPICAL PERFORMANCE CURVES
TJ = 175°C
40
TJ = 125°C
30
20
10
0
TJ = 25°C
TJ = -55°C
0
1
2
3
4
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
15A
80
7.5A
60
40
20
0 200 400 600 800 1000 1200 1400 1600
-diF /dt, CURRENT RATE OF CHANGE(A/μs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
30A
500
400
15A
300
7.5A
200
100
0 200 400 600 800 1000 1200 1400 1600
-diF /dt, CURRENT RATE OF CHANGE (A/μs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
1.2
IRRM, REVERSE RECOVERY CURRENT
(A)
Qrr, REVERSE RECOVERY CHARGE
(nC)
R
0
R
20
30A
15
10
15A
7.5A
5
0 200 400 600 800 1000 1200 1400 1600
-diF /dt, CURRENT RATE OF CHANGE (A/μs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
35
Qrr
trr
1.0
T =125°C
J
V =400V
0
Duty cycle = 0.5
T =175°C
J
30
25
0.8
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/μs)
30A
100
25
T =125°C
J
V =400V
IRRM
0.6
trr
0.4
Qrr
0.2
0.0
R
0
700
600
T =125°C
J
V =400V
20
15
10
5
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
0
25
50
75
100
125
150
175
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
80
70
60
50
40
30
20
10
0
1
10
100 200
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
053-4205 Rev F 2-2010
CJ, JUNCTION CAPACITANCE
(pF)
90
APT15DQ60K(G)
Vr
diF /dt Adjust
+18V
APT6017LLL
0V
D.U.T.
30μH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
0.25 IRRM
3
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-220 (K) Package Outline
e3 100% Sn
0.404 [10.26]
0.393 [9.98]
Cathode
0.114 [2.90]
0.102 [2.59]
0.186 [4.72]
0.174 [4.42]
0.058 [1.47]
0.047 [1.19]
ø0.153 [3.89]
ø0.149 [3.78]
0.508 [12.90]
0.492 [12.50]
0.362 [9.19]
0.354 [8.99]
0.154 [3.91]
0.134 [3.40]
0.531 [13.49]
0.515 [13.08]
0.110 [2.79]
0.099 [2.51]
0.057 [1.45]
0.047 [1.19]
053-4205 Rev F 2-2010
Cathode
Anode
0.100 [2.54] TYP
0.204 [5.18]
0.196 [4.98]
0.034 [0.86]
0.030 [0.76]
0.018 [0.46]
0.014 [0.36]
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
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and foreign patents. US and Foreign patents pending. All Rights Reserved.
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