APT17F100B
APT17F100S
1000V, 17A, 0.80Ω Max, trr ≤245ns
N-Channel FREDFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
TO
-2
47
D3PAK
APT17F100B
APT17F100S
D
Single die FREDFET
G
S
TYPICAL APPLICATIONS
FEATURES
• Fast switching with low EMI
• ZVS phase shifted and other full bridge
• Low trr for high reliability
• Half bridge
• Ultra low Crss for improved noise immunity
• PFC and other boost converter
• Low gate charge
• Buck converter
• Avalanche energy rated
• Single and two switch forward
• RoHS compliant
• Flyback
Absolute Maximum Ratings
Symbol
ID
Parameter
Unit
Ratings
Continuous Drain Current @ TC = 25°C
17
Continuous Drain Current @ TC = 100°C
11
A
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy 2
1070
mJ
IAR
Avalanche Current, Repetitive or Non-Repetitive
9
A
1
68
Thermal and Mechanical Characteristics
Min
Characteristic
Typ
Max
Unit
W
PD
Total Power Dissipation @ TC = 25°C
625
RθJC
Junction to Case Thermal Resistance
0.20
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
150
°C
Soldering Temperature for 10 Seconds (1.6mm from case)
WT
Package Weight
300
0.22
oz
6.2
g
10
in·lbf
1.1
N·m
Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Microsemi Website - http://www.microsemi.com
9-2007
TL
Torque
-55
Rev A
TJ,TSTG
°C/W
0.11
050-8159
Symbol
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol
Parameter
VBR(DSS)
Drain-Source Breakdown Voltage
∆VBR(DSS)/∆TJ
Breakdown Voltage Temperature Coefficient
RDS(on)
Drain-Source On Resistance
VGS(th)
Gate-Source Threshold Voltage
∆VGS(th)/∆TJ
VGS = 10V, ID = 9A
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
Dynamic Characteristics
VDS = 1000V
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Typ
Max
1.15
0.69
4
-10
0.80
5
TJ = 25°C
VGS = 0V
250
1000
±100
TJ = 125°C
VGS = ±30V
Unit
V
V/°C
Ω
V
mV/°C
µA
nA
TJ = 25°C unless otherwise specified
Parameter
Forward Transconductance
3
VGS = VDS, ID = 1mA
Threshold Voltage Temperature Coefficient
gfs
Min
1000
3
IDSS
Symbol
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 250µA
APT17F100B_S
Min
Test Conditions
VDS = 50V, ID = 9A
4
Effective Output Capacitance, Charge Related
Co(er)
5
Effective Output Capacitance, Energy Related
Max
19
4845
65
405
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr)
Typ
Unit
S
pF
165
VGS = 0V, VDS = 0V to 667V
85
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
Resistive Switching
Current Rise Time
VDD = 667V, ID = 9A
tr
td(off)
tf
Turn-Off Delay Time
150
26
70
29
31
105
28
VGS = 0 to 10V, ID = 9A,
VDS = 500V
RG = 4.7Ω 6 , VGG = 15V
Current Fall Time
nC
ns
Source-Drain Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irrm
Reverse Recovery Current
dv/dt
Peak Recovery dv/dt
Test Conditions
Min
Typ
D
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
A
68
S
TJ = 25°C
TJ = 125°C
TJ = 25°C
diSD/dt = 100A/µs
TJ = 125°C
VDD = 100V
TJ = 25°C
Unit
17
G
ISD = 9A, TJ = 25°C, VGS = 0V
ISD = 9A 3
Max
TJ = 125°C
ISD ≤ 9A, di/dt ≤1000A/µs, VDD = 400V,
TJ = 125°C
215
385
1.02
2.57
9.03
12.83
1.0
245
465
V
ns
µC
A
25
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 26.42mH, RG = 25Ω, IAS = 9A.
050-8159
Rev A
9-2007
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -1.41E-8/VDS^2 + 2.48E-9/VDS + 4.81E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT17F100B_S
14
40
V
GS
= 10V
T = 125°C
J
35
12
ID, DRIAN CURRENT (A)
ID, DRAIN CURRENT (A)
TJ = -55°C
30
25
20
TJ = 25°C
15
10
TJ = 125°C
5
0
V
8
6
5V
4
2
TJ = 150°C
0
0
5
10
15
20
25
30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
4.5V
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
60
NORMALIZED TO
VDS> ID(ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS = 10V @ 9A
50
2.5
ID, DRAIN CURRENT (A)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
Figure 1, Output Characteristics
3.0
= 6, 7, 8 & 9V
GS
10
2.0
1.5
1.0
40
TJ = -55°C
TJ = 25°C
30
TJ = 125°C
20
10
0.5
0
0
-55 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
10,000
25
20
TJ = -55°C
C, CAPACITANCE (pF)
gfs, TRANSCONDUCTANCE
Ciss
TJ = 25°C
15
TJ = 125°C
10
1,000
100
Coss
5
Crss
0
4
6
8
10
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
12
200
400
600
800
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
ID = 9A
VDS = 600V
8
6
VDS = 960V
4
2
40
TJ = 25°C
30
TJ = 150°C
20
9-2007
VDS = 240V
10
50
10
0
0
20 40 60 80 100 120 140 160 180 200
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
Rev A
12
050-8159
14
0
0
60
16
VGS, GATE-TO-SOURCE VOLTAGE (V)
2
10
ISD, REVERSE DRAIN CURRENT (A)
0
APT17F100B_S
100
100
IDM
ID, DRAIN CURRENT (A)
10
13µs
100µs
1ms
1
Rds(on)
10ms
10
Scaling for Different Case & Junction
Temperatures:
ID = ID(T = 25°C)*(TJ - TC)/125
DC line
1
1ms
10ms
100ms
DC line
TJ = 150°C
TC = 25°C
1
100ms
0.1
13µs
100µs
Rds(on)
0.1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
C
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
TJ (°C)
1
TC (°C)
0.0167
0.0688
0.114
Dissipated Power
(Watts)
0.00457
0.0176
ZEXT
ID, DRAIN CURRENT (A)
IDM
0.270
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Figure 11, Transient Thermal Impedance Model
0.20
D = 0.9
0.15
0.7
Note:
0.5
0.10
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
0.25
t1
t2
0.3
t1 = Pulse Duration
0.05
t
0
10-5
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
0.1
0.05
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (seconds)
Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
1.0
D3PAK Package Outline
TO-247 (B) Package Outline
15.49 (.610)
16.26 (.640)
Drain
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
e3 100% Sn Plated
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
13.79 (.543)
13.99(.551)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
13.41 (.528)
13.51(.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022) {3 Plcs}
050-8159
Rev A
9-2007
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated