ADPOW APT2X61D100J Ultrafast soft recovery dual rectifier diode Datasheet

2
3
2
2
3
1
1
4
1
3
S
4
Anti-Parallel
Parallel
APT2X60D100J
APT2X61D100J
7
22
OT
4
APT2X60D100J
APT2X61D100J
1000V
1000V
60A
60A
DUAL DIE ISOTOP® PACKAGE
ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Anti-Parallel Diode
• Ultrafast Recovery Times
• Low Losses
• Soft Recovery Characteristics
• Low Noise Switching
• Popular SOT-227 Package
• Cooler Operation
• Low Forward Voltage
• Higher Reliability Systems
• High Blocking Voltage
• Increased System Power
•
•
•
•
•
-Switchmode Power Supply
-Inverters
Free Wheeling Diode
-Motor Controllers
-Converters
Snubber Diode
Uninterruptible Power Supply (UPS)
Induction Heating
High Speed Rectifiers
MAXIMUM RATINGS
Symbol
VR
Density
• Low Leakage Current
All Ratings: TC = 25°C unless otherwise specified.
Characteristic / Test Conditions
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 50°C, Duty Cycle = 0.5)
IFSM
TJ,TSTG
TL
UNIT
1000
Volts
Maximum D.C. Reverse Voltage
VRRM
IF(RMS)
APT2X60/2X61D100J
60
RMS Forward Current
100
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
540
Amps
-55 to 150
Operating and StorageTemperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
MIN
TYP
IRM
Maximum Forward Voltage
2.1
IF = 120A
Maximum Reverse Leakage Current
UNIT
2.5
IF = 60A
VF
MAX
Volts
IF = 60A, TJ = 150°C
2.0
VR = VR Rated
250
VR = VR Rated, TJ = 125°C
500
µA
CT
Junction Capacitance, VR = 200V
65
pF
LS
Series Inductance (Lead to Lead 5mm from Base)
10
nH
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
053-0005 Rev D
Symbol
APT2X60/2X61D100J
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
85
trr1
Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/µs, VR = 30V, TJ = 25°C
70
trr2
Reverse Recovery Time
TJ = 25°C
70
trr3
IF = 60A, diF /dt = -480A/µs, VR = 540V
TJ = 100°C
130
tfr1
Forward Recovery Time
TJ = 25°C
200
tfr2
IF = 60A, diF /dt = 480A/µs, VR = 540V
TJ = 100°C
200
IRRM1
Reverse Recovery Current
TJ = 25°C
14
26
IRRM2
IF = 60A, diF /dt = -480A/µs, VR = 540V
TJ = 100°C
26
36
Qrr1
Recovery Charge
TJ = 25°C
500
Qrr2
IF = 60A, diF /dt = -480A/µs, VR = 540V
TJ = 100°C
1700
Vfr1
Forward Recovery Voltage
TJ = 25°C
15.5
Vfr2
IF = 60A, diF /dt = 480A/µs, VR = 540V
TJ = 100°C
15.5
Rate of Fall of Recovery Current
TJ = 25°C
900
IF = 60A, diF /dt = -480A/µs, VR = 540V (See Figure 10)
TJ = 100°C
600
diM/dt
UNIT
ns
Amps
nC
Volts
A/µs
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
RθJC
Junction-to-Case Thermal Resistance
RθJA
Junction-to-Ambient Thermal Resistance
VIsolation
WT
Torque
RMS Voltage (50-60 Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
MIN
TYP
UNIT
MAX
0.66
°C/W
20
2500
Volts
1.03
oz
29.2
gm
Package Weight
13.6
lb•in
1.5
N•m
Maximum Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine)
1.0
D=0.5
0.2
0.1
0.05
0.1
0.05
0.02
0.01
0.01
0.005
Note:
SINGLE PULSE
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
0.5
t1
053-0005 Rev D
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
APT2X60/2X61D100J
5000
Qrr, REVERSE RECOVERY CHARGE
(nano-COULOMBS)
160
TJ = 25°C
120
TJ = 150°C
TJ = 100°C
TJ = -55°C
80
40
0
0
1
2
3
4
5
VF, ANODE-TO-CATHODE VOLTAGE (VOLTS)
Figure 2, Forward Voltage Drop vs Forward Current
4000
120A
3000
60A
2000
1000
30A
0
10
50
100
500 1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 3, Reverse Recovery Charge vs Current Slew Rate
60
2.0
TJ = 100°C
VR = 540V
120A
Kf, DYNAMIC PARAMETERS
(NORMALIZED)
IRRM, REVERSE RECOVERY CURRENT
(AMPERES)
TJ = 100°C
VR = 540V
45
60A
30A
30
15
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 4, Reverse Recovery Current vs Current Slew Rate
1.6
Qrr
trr
1.2
0.8
0.4
0.0
Qrr
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5, Dynamic Parameters vs Junction Temperature
300
-50
1400
tfr, FORWARD RECOVERY TIME
(nano-SECONDS)
trr, REVERSE RECOVERY TIME
(nano-SECONDS)
TJ = 100°C
VR = 540V
240
120A
60A
30A
180
120
60
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 6, Reverse Recovery Time vs Current Slew Rate
IRRM
trr
1200
35
TJ = 100°C
VR = 540V
IF = 60A
1000
30
25
Vfr
800
20
600
15
400
10
tfr
200
5
Vfr, FORWARD RECOVERY VOLTAGE
(VOLTS)
IF, FORWARD CURRENT
(AMPERES)
200
0
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 7, Forward Recovery Voltage/Time vs Current Slew Rate
1000
500
100
50
0.01
0.05
0.1
Figure 8, Junction Capacitance vs Reverse Voltage
0.5
1
5
VR, REVERSE VOLTAGE (VOLTS)
10
50
100
200
053-0005 Rev D
CJ, JUNCTION CAPACITANCE
(pico-FARADS)
2000
APT2X60/2X61D100J
Vr
D.U.T.
trr/Qrr
Waveform
30µH
PEARSON 411
CURRENT
TRANSFORMER
+15v
diF /dt Adjust
0v
-15v
Figure 9, Diode Reverse Recovery Test Circuit and Waveforms
1
IF - Forward Conduction Current
2
diF /dt - Current Slew Rate, Rate of Forward
Current Change Through Zero Crossing.
3
IRRM - Peak Reverse Recovery Current.
4
trr - Reverse Recovery Time Measured from Point of IF
1
4
6
Zero
5
3
Current Falling Through Zero to a Tangent Line { 6 diM/dt}
Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM.
0.5 IRRM
0.75 IRRM
2
5
Qrr - Area Under the Curve Defined by IRRM and trr.
6
diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
Qrr = 1/2 (trr . IRRM)
Figure 10, Diode Reverse Recovery Waveform and Definitions
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOT-227 Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4 H100
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
1.95 (.077)
2.14 (.084)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
Anti-parallel
Parallel
APT2X60D100J
APT2X61D100J
Anode 2
Cathode 1 Cathode 2
Anode 2
053-0005 Rev D
38.0 (1.496)
38.2 (1.504)
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
Cathode 2
Anode 1
Cathode 1
Anode 1
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