Microsemi APT30DQ120K Ultrafast soft recovery rectifier diode Datasheet

1200V 30A
APT30DQ120K
APT30DQ120KG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
(K)
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
-Inverters
• Snubber Diode
• Ultrafast Recovery Times
• Low Losses
• Soft Recovery Characteristics
• Low Noise Switching
• Popular TO-220 Package
• Cooler Operation
• Low Forward Voltage
• Higher Reliability Systems
• Low Leakage Current
• Increased System Power
Density
• PFC
1
2
2
1
• Avalanche Energy Rated
1 - Cathode
2 - Anode
Back of Case - Cathode
MAXIMUM RATINGS
Symbol
VR
All Ratings: TC = 25°C unless otherwise specified.
Characteristic / Test Conditions
APT30DQ120K(G)
UNIT
1200
Volts
Maximum D.C. Reverse Voltage
VRRM
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 103°C, Duty Cycle = 0.5)
30
RMS Forward Current (Square wave, 50% duty)
43
IF(RMS)
IFSM
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
EAVL
Avalanche Energy (1A, 40mH)
TJ,TSTG
TL
Amps
210
20
mJ
-55 to 175
Operating and StorageTemperature Range
°C
300
Lead Temperature for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
VF
Characteristic / Test Conditions
Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance, VR = 200V
MIN
TYP
MAX
IF = 30A
2.8
3.3
IF = 60A
3.4
IF = 30A, TJ = 125°C
2.1
Volts
VR = 1200V
100
VR = 1200V, TJ = 125°C
500
Microsemi Website - http://www.microsemi.com
36
UNIT
µA
pF
053-4246 Rev C 2-2010
Symbol
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Time
Qrr
Reverse Recovery Charge
trr
Qrr
IRRM
IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
VR = 667V, TC = 25°C
IF = 30A, diF/dt = -200A/µs
VR = 667V, TC = 125°C
Maximum Reverse Recovery Current
Reverse Recovery Time
IF = 30A, diF/dt = -1000A/µs
Reverse Recovery Charge
Maximum Reverse Recovery Current
MIN
TYP
MAX
UNIT
-
26
-
320
-
545
-
4
-
435
ns
-
2100
nC
-
9
-
180
ns
-
2975
nC
-
28
Amps
MIN
TYP
ns
IF = 30A, diF/dt = -200A/µs
Maximum Reverse Recovery Current
trr
IRRM
APT30DQ120K(G)
VR = 667V, TC = 125°C
nC
-
-
Amps
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
θJC
WT
Torque
Characteristic / Test Conditions
MAX
UNIT
.80
°C/W
Junction-to-Case Thermal Resistance
Package Weight
0.07
oz
9.9
g
Maximum Mounting Torque
10
lb•in
1.1
N•m
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.80
D = 0.9
0.70
0.60
0.7
0.50
0.5
0.40
0.30
0.3
t1
t2
0.20
t
SINGLE PULSE
0.1
0.10
0.05
0
10-5
053-4246 Rev C 2-2010
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
0.90
10-4
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TYPICAL PERFORMANCE CURVES
APT30DQ120K(G)
200
160
140
TJ = 175°C
120
100
80
TJ = 25°C
TJ = 125°C
60
40
TJ = -55°C
20
0
0
1
2
3
4
5
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
Qrr, REVERSE RECOVERY CHARGE
(nC)
5000
T = 125°C
J
V = 800V
R
60A
4000
3000
30A
2000
15A
1000
0
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
R
400
30A
300
15A
200
100
35
T = 125°C
J
V = 800V
R
30
60A
25
30A
20
15
15A
10
5
0
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
50
trr
1.0
60A
500
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
1.2
Qrr
Duty cycle = 0.5
T = 175°C
45
J
40
trr
0.8
IRRM
35
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/µs)
T = 125°C
J
V = 800V
0
IRRM, REVERSE RECOVERY CURRENT
(A)
IF, FORWARD CURRENT
(A)
180
trr, REVERSE RECOVERY TIME
(ns)
600
0.6
30
25
20
0.4
Qrr
15
10
0.2
5
0.0
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
0
25
50
75
100
125
150
175
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
200
160
140
120
100
80
60
40
20
0
1
10
100 200
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
053-4246 Rev C 2-2010
CJ, JUNCTION CAPACITANCE
(pF)
180
APT30DQ120K(G)
Vr
diF /dt Adjust
+18V
APT10035LLL
0V
D.U.T.
30μH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
0.25 IRRM
3
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-220 (K) Package Outline
e3 100% Sn
0.404 [10.26]
0.393 [9.98]
Cathode
0.114 [2.90]
0.102 [2.59]
0.186 [4.72]
0.174 [4.42]
0.058 [1.47]
0.047 [1.19]
ø0.153 [3.89]
ø0.149 [3.78]
0.508 [12.90]
0.492 [12.50]
0.362 [9.19]
0.354 [8.99]
0.154 [3.91]
0.134 [3.40]
0.531 [13.49]
0.515 [13.08]
0.110 [2.79]
0.099 [2.51]
0.057 [1.45]
0.047 [1.19]
053-4246 Rev C 2-2010
Cathode
Anode
0.100 [2.54] TYP
0.204 [5.18]
0.196 [4.98]
0.034 [0.86]
0.030 [0.76]
0.018 [0.46]
0.014 [0.36]
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
Similar pages