APT38F80B2 APT38F80L 800V, 41A, 0.24Ω Max, trr ≤300ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. T-Max® TO-264 APT38F80B2 APT38F80L D Single die FREDFET G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI • ZVS phase shifted and other full bridge • Low trr for high reliability • Half bridge • Ultra low Crss for improved noise immunity • PFC and other boost converter • Low gate charge • Buck converter • Avalanche energy rated • Single and two switch forward • RoHS compliant • Flyback Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 41 Continuous Drain Current @ TC = 100°C 26 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 1710 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 20 A 1 150 Thermal and Mechanical Characteristics Min Characteristic Typ Max Unit W PD Total Power Dissipation @ TC = 25°C 1040 RθJC Junction to Case Thermal Resistance 0.12 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range 150 °C Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight 300 0.22 oz 6.2 g 10 in·lbf 1.1 N·m Mounting Torque ( TO-264 Package), 4-40 or M3 screw MicrosemiWebsite-http://www.microsemi.com 04-2009 TL Torque -55 Rev C TJ,TSTG °C/W 0.11 050-8107 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter VBR(DSS) Drain-Source Breakdown Voltage ΔVBR(DSS)/ΔTJ Breakdown Voltage Temperature Coefficient RDS(on) Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ΔVGS(th)/ΔTJ Min 800 VGS = 10V, ID = 20A 3 Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics VDS = 800V TJ = 25°C VGS = 0V TJ = 125°C Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Typ Max 0.87 0.19 4 -10 0.24 5 250 1000 ±100 VGS = ±30V Unit V V/°C Ω V mV/°C µA nA TJ = 25°C unless otherwise specified Parameter gfs 2.5 VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient IDSS Symbol Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA APT38F80B2_L Min Test Conditions VDS = 50V, ID = 20A 4 Effective Output Capacitance, Charge Related Co(er) 5 Effective Output Capacitance, Energy Related Max 38 8070 140 805 VGS = 0V, VDS = 25V f = 1MHz Co(cr) Typ Unit S pF 380 VGS = 0V, VDS = 0V to 533V Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tr td(off) tf Current Rise Time Turn-Off Delay Time 190 260 44 135 46 65 200 60 VGS = 0 to 10V, ID = 20A, VDS = 400V Resistive Switching VDD = 533V, ID = 20A RG = 2.2Ω 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current dv/dt Peak Recovery dv/dt Test Conditions Min Typ D MOSFET symbol showing the integral reverse p-n junction diode (body diode) A 150 S TJ = 25°C TJ = 125°C TJ = 25°C VDD = 100V TJ = 125°C diSD/dt = 100A/µs TJ = 25°C Unit 41 G ISD = 20A, TJ = 25°C, VGS = 0V ISD = 20A 3 Max TJ = 125°C ISD ≤ 20A, di/dt ≤1000A/µs, VDD = 533V, TJ = 125°C 250 485 2 6.7 13 22 1.1 300 600 V ns µC A 20 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 8.55mH, RG = 25Ω, IAS = 20A. 050-8107 Rev C 04-2009 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -2.17E-7/VDS^2 + 2.63E-8/VDS + 3.74E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT38F80B2_L 50 100 V GS = 10V T = 125°C J 90 TJ = -55°C 70 TJ = 25°C 60 50 40 30 TJ = 125°C 20 30 20 5V 10 4.5V 4V 0 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics 150 NORMALIZED TO VDS> ID(ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE VGS = 10V @ 20A 125 2.5 ID, DRAIN CURRENT (A) 2.0 1.5 1.0 100 TJ = -55°C 75 TJ = 25°C 50 TJ = 125°C 25 0.5 0 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 20,000 Ciss 10,000 TJ = -55°C 50 C, CAPACITANCE (pF) TJ = 25°C 40 TJ = 125°C 30 20 1,000 Coss 100 Crss 10 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 200 400 600 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 0 150 ID = 20A 14 12 VDS = 160V 10 VDS = 400V 8 6 VDS = 640V 4 2 0 10 35 125 100 TJ = 25°C 75 TJ = 150°C 04-2009 16 5 50 25 0 0 50 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage Rev C 0 ISD, REVERSE DRAIN CURRENT (A) 0 050-8107 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 3.0 60 gfs, TRANSCONDUCTANCE = 6, & 6.5V 5.5V Figure 1, Output Characteristics VGS, GATE-TO-SOURCE VOLTAGE (V) GS TJ = 150°C 10 0 = 10, & 15V GS 40 ID, DRIAN CURRENT (A) ID, DRAIN CURRENT (A) 80 V V APT38F80B2_L 200 200 100 100 IDM 10 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) IDM 13µs 100µs Rds(on) 1 1ms 10ms 100ms 0.1 10 13µs 100µs 1ms 10ms 100ms TJ = 150°C TC = 25°C 1 DC line Scaling for Different Case & Junction Temperatures: ID = ID(T = 25°C)*(TJ - TC)/125 DC line TJ = 125°C TC = 75°C 1 Rds(on) 0.1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area C 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 0.12 D = 0.9 0.10 0.7 0.08 Note: 0.5 0.06 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.14 0.3 0.04 t2 t1 = Pulse Duration SINGLE PULSE 0.02 0 t1 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.1 0.05 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration T-MAX® (B2) Package Outline TO-264 (L) Package Outline e3 100% Sn Plated 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drain Drain 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 04-2009 Rev C 2.87 (.113) 3.12 (.123) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 050-8107 25.48 (1.003) 26.49 (1.043) 19.81 (.780) 21.39 (.842) Gate Drain Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 2.29 (.090) 2.69 (.106) Gate Drain Source 1.0