APT5016BLL
APT5016SLL
500V 30A 0.160Ω
R
POWER MOS 7
MOSFET
D3PAK
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
D
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol
TO-247
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT5016BLL-SLL
UNIT
500
Volts
Drain-Source Voltage
30
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
329
Watts
Linear Derating Factor
2.63
W/°C
PD
TJ,TSTG
120
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
-55 to 150
°C
300
Amps
30
(Repetitive and Non-Repetitive)
1
30
4
mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, 15A)
TYP
MAX
Volts
0.160
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
11-2003
Characteristic / Test Conditions
050-7005 Rev C
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT5016BLL- SLL
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
600
Reverse Transfer Capacitance
f = 1 MHz
60
VGS = 10V
72
VDD = 250V
16
Crss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
ID = 30A @ 25°C
tf
10
VDD = 250V
ID = 30A @ 25°C
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
14
INDUCTIVE SWITCHING @ 25°C
6
256
VDD = 333V, VGS = 15V
ID = 30A, RG = 5Ω
172
INDUCTIVE SWITCHING @ 125°C
6
ns
27
RG = 1.6Ω
Fall Time
nC
10
VGS = 15V
Turn-off Delay Time
pF
42
RESISTIVE SWITCHING
Rise Time
td(off)
UNIT
2833
VGS = 0V
3
MAX
µJ
476
VDD = 333V, VGS = 15V
ID = 30A, RG = 5Ω
215
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
30
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -30A, dl S/dt = 100A/µs)
540
ns
Q
Reverse Recovery Charge (IS = -30A, dl S/dt = 100A/µs)
7.36
µC
rr
dv/
dt
Peak Diode Recovery
dv/
120
(Body Diode)
1.3
(VGS = 0V, IS = -30A)
dt
Amps
Volts
8
V/ns
MAX
UNIT
5
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.38
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 2.89mH, RG = 25Ω, Peak IL = 30A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -30A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.30
0.7
0.25
0.5
0.20
Note:
0.15
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7005 Rev C
11-2003
0.40
0.35
0.3
0.10
0.05
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.05
0
t1
t2
SINGLE PULSE
0.1
10-5
10-4
°C/W
40
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT5016BLL - SLL
80
8V
0.0174
Power
(watts)
0.00401F
0.143
0.00641F
0.219
0.158F
ID, DRAIN CURRENT (AMPERES)
RC MODEL
Junction
temp. (°C)
15 &10V
7.5V
60
7V
40
6.5V
20
6V
5.5V
Case temperature. (°C)
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
80
60
40
TJ = +125°C
20
TJ = -55°C
TJ = +25°C
0
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
25
20
15
10
5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
GS
1.15
1.1
VGS=10V
1.05
VGS=20V
1.0
0.95
0.9
0
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
D
1.00
0.95
0.90
0.85
-50
= 15A
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
1.05
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
11-2003
I
V
1.10
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
NORMALIZED TO
V
= 10V @ 15A
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
30
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.2
050-7005 Rev C
ID, DRAIN CURRENT (AMPERES)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
100
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
Typical Performance Curves
100µS
10
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
5,000
OPERATION HERE
LIMITED BY RDS (ON)
Ciss
1,000
Coss
100
Crss
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
10mS
10
16
I = 30
D
14
VDS=100V
12
10
VDS=250V
VDS=400V
8
6
4
2
0
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
1
5 10
50 100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
APT5016BLL - SLL
10,000
120
0
10 20 30 40 50 60 70 80 90 100
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
200
100
50
TJ =+150°C
TJ =+25°C
10
5
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
60
60
V
td(off)
G
50
50
= 333V
DD
R
= 5Ω
T = 125°C
J
40
V
DD
R
G
= 5Ω
T = 125°C
J
30
L = 100µH
td(on)
0
0
10
20
30
40
50
0
30
40
50
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
1000
V
DD
R
G
1200
= 333V
I
1000
J
800
10
V
= 5Ω
T = 125°C
L = 100µH
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
tr
10
0
11-2003
30
20
20
10
050-7005 Rev C
tf
40
= 333V
tr and tf (ns)
td(on) and td(off) (ns)
L = 100µH
EON includes
diode reverse recovery.
600
Eon
400
200
Eoff
DD
D
20
= 333V
= 30A
T = 125°C
J
Eoff
L = 100µH
EON includes
800
diode reverse recovery.
600
Eon
400
200
0
0
0
10
20
30
40
50
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT5016BLL - SLL
Gate Voltage
10 %
90%
TJ = 125 C
Gate Voltage
td(on)
d(off)
tr
Drain Voltage
Drain Current
90%
90%
5%
T = 125 C
J
td(off)
t
5%
tf
10 %
10%
0
Drain Voltage
Switching Energy
Drain Current
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60
IC
V DD
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
3
TO-247 Package Outline
15.49 (.610)
16.26 (.640)
Drain
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Gate
Drain
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
050-7005 Rev C
0.46 (.018)
0.56 (.022) {3 Plcs}
11-2003
3.50 (.138)
3.81 (.150)