APT50M65JFLL
500V
POWER MOS 7
R
0.065Ω
58A
FREDFET
S
S
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
27
2
T-
D
G
SO
"UL Recognized"
ISOTOP ®
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
D
G
S
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT50M65JFLL
UNIT
Drain-Source Voltage
500
Volts
ID
Continuous Drain Current @ TC = 25°C
58
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
520
Watts
Linear Derating Factor
4.16
W/°C
VDSS
PD
TJ,TSTG
1
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
1
Amps
232
-55 to 150
°C
300
Amps
58
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance
2
TYP
MAX
500
(VGS = 10V, 29A)
UNIT
Volts
0.065
Ohms
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
12-2003
BVDSS
Characteristic / Test Conditions
050-7032 Rev D
Symbol
APT50M65JFLL
DYNAMIC CHARACTERISTICS
Symbol
C iss
Coss
C rss
Qg
Qgs
Characteristic
Test Conditions
Input Capacitance
VGS = 0V
Output Capacitance
VDS = 25V
3
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
td(off)
tf
ID = 67A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
Rise Time
VDD = 250V
Turn-off Delay Time
ID = 67A @ 25°C
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
ns
1035
VDD = 333V, VGS = 15V
Eon
nC
30
RG = 0.6Ω
Eon
UNIT
pF
87
141
40
70
12
28
29
VGS = 10V
Gate-Source Charge
MAX
7010
1390
VDD = 250V
Qgd
tr
TYP
f = 1 MHz
Reverse Transfer Capacitance
Total Gate Charge
MIN
ID = 67A, RG = 3Ω
845
INDUCTIVE SWITCHING @ 125°C
1556
VDD = 333V VGS = 15V
ID = 67A, RG = 3Ω
µJ
1013
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
dv/
dt
Characteristic / Test Conditions
MIN
TYP
MAX
58
Continuous Source Current (Body Diode)
Amps
Pulsed Source Current
1
(Body Diode)
232
Diode Forward Voltage
2
(VGS = 0V, IS = -67A)
1.3
Volts
15
V/ns
Peak Diode Recovery
dv/
dt
5
Reverse Recovery Time
(IS = -67A, di/dt = 100A/µs)
Tj = 25°C
270
Tj = 125°C
540
Q rr
Reverse Recovery Charge
(IS = -67A, di/dt = 100A/µs)
Tj = 25°C
2.6
Tj = 125°C
9.6
IRRM
Peak Recovery Current
(IS = -67A, di/dt = 100A/µs)
Tj = 25°C
17
Tj = 125°C
31
t rr
UNIT
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
MAX
0.24
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.7
0.15
0.5
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
12-2003
050-7032 Rev D
0.9
0.20
0.3
t1
t2
0.05
0.1
0
SINGLE PULSE
0.05
10-5
10-4
°C/W
4 Starting Tj = +25°C, L = 1.78mH, RG = 25Ω, Peak IL = 58A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -58A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25
0.10
UNIT
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT50M65JFLL
180
Junction
temp. ( ”C)
0.0528
Power
(Watts)
0.0651
0.123
0.0203F
0.173F
0.490F
ID, DRAIN CURRENT (AMPERES)
RC MODEL
15 &10V
160
8V
140
120
7V
100
80
6.5V
60
6V
40
5.5V
20
Case temperature
5V
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
140
120
100
80
60
TJ = +125°C
40
TJ = +25°C
20
0
TJ = -55°C
0
1
2
3
4
5
6
7
8
9
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
GS
1.3
1.2
1.1
VGS=10V
1.00
VGS=20V
0.90
0.80
0
10
20
30
40
50
60
70
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
1.2
I
D
V
= 29A
GS
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
NORMALIZED TO
V
= 10V @ 29A
1.15
60
0.0
-50
1.4
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
12-2003
160
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
050-7032 Rev D
ID, DRAIN CURRENT (AMPERES)
180
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
10,000
100µS
10
1mS
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
100
16
= 67A
12
100
Crss
VDS=100V
VDS=250V
VDS=400V
8
4
0
40
80
120
160
200
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
10
100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
Coss
1,000
10
1
I
Ciss
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
0
APT50M65JFLL
30,000
232
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
160
80
V
td(off)
70
= 333V
DD
R
140
G
= 3Ω
T = 125°C
tf
J
120
V
50
DD
R
G
= 3Ω
T = 125°C
J
40
L = 100µH
30
20
30
V
DD
R
G
50
tr
70
90
110
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
5000
= 333V
I
T = 125°C
J
Eon
L = 100µH
EON includes
diode reverse recovery.
1500
1000
500
30
V
= 3Ω
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
12-2003
050-7032 Rev D
60
0
10
70
90
110
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
2000
80
20
0
10
2500
100
40
td(on)
10
3000
L = 100µH
= 333V
tr and tf (ns)
td(on) and td(off) (ns)
60
DD
D
50
= 333V
= 67A
Eoff
T = 125°C
J
4000
L = 100µH
E ON includes
diode reverse recovery.
3000
2000
Eon
1000
Eoff
0
10
0
30
50
70
90
110
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT50M65JFLL
90%
Gate Voltage
10 %
Gate Voltage
T = 125 C
J
TJ = 125 C
td(off)
td(on)
tr
Drain Voltage
Drain Current
90%
90%
5%
10%
10 %
Drain Voltage
tf
Switching Energy
Switching Energy
0
Drain Current
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT60DF60
V DD
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
12-2003
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7032 Rev D
7.8 (.307)
8.2 (.322)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)