Microsemi APT60DS10HJ Isotop schottky diode full bridge power module Datasheet

APT60DS10HJ
ISOTOP® Schottky Diode
Full Bridge Power Module
VRRM = 100V
IF = 60A @ Tc = 80°C
Application
•
•
•
Switch mode power supplies rectifier
Induction heating
Welding equipment
Features
•
•
•
•
•
•
+
~
~
Ultra fast recovery times
Soft recovery characteristics
High current
Very low stray inductance
High level of integration
ISOTOP® Package (SOT-227)
Benefits
•
•
•
•
•
•
-
Outstanding performance at high frequency operation
Low losses
Low noise switching
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
Symbol
VR
VRRM
IFAV
IFSM
Parameter
Maximum DC reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Rectangular, d=0.5
Non-Repetitive Forward Surge Current
t=10ms
TC = 80°C
TJ = 45°C
Max ratings
Unit
100
V
60
700
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-3
APT60DS10HJ – Rev 0 November, 2009
Absolute maximum ratings
APT60DS10HJ
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
IR
Reverse Current
VR = 100V
VF
Forward Voltage
IF = 60A
Min
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Typ
Max
2
20
0.91
0.74
Unit
mA
V
Thermal and package characteristics
Symbol
RthJC
RthJA
VISOL
TJ,TSTG
TL
Torque
Wt
Characteristic
Junction to Case Thermal resistance
Junction to Ambient
Min
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
-55
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
Typ
Max
0.8
20
Unit
°C/W
V
150
300
1.5
29.2
°C
N.m
g
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
25.2 (0.992)
25.4 (1.000)
3.30 (.130) 12.6 (.496)
4.57 (.180) 12.8 (.504)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
Dimensions in Millimeters and (Inches)
38.0 (1.496)
38.2 (1.504)
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2-3
APT60DS10HJ – Rev 0 November, 2009
30.1 (1.185)
30.3 (1.193)
APT60DS10HJ
Typical Performance Curve
Forward Characteristic
120
100
TJ=125°C
IF (A)
80
60
40
TJ=25°C
20
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1
0.8
0.9
0.6
0.7
0.5
0.4
0.3
0.2
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APT60DS10HJ – Rev 0 November, 2009
ISOTOP® is a registered trademark of ST Microelectronics NV
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