APT84F50B2 APT84F50L 500V, 84A, 0.065Ω Max, trr ≤320ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. T-MaxTM APT84F50B2 TO-264 APT84F50L Single die FREDFET D G S FEATURES TYPICAL APPLICATIONS • Fast switching with low EMI • ZVS phase shifted and other full bridge • Low trr for high reliability • Half bridge • Ultra low Crss for improved noise immunity • PFC and other boost converter • Low gate charge • Buck converter • Avalanche energy rated • Single and two switch forward • RoHS compliant • Flyback Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 84 Continuous Drain Current @ TC = 100°C 53 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 1845 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 42 A 1 270 Thermal and Mechanical Characteristics Max Unit W PD Total Power Dissipation @ TC = 25°C 1135 RθJC Junction to Case Thermal Resistance 0.11 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range TL Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw MicrosemiWebsite-http://www.microsemi.com 0.11 -55 150 300 °C/W °C 0.22 oz 6.2 g 10 in·lbf 1.1 N·m 05-2009 Typ Rev B Min Characteristic 050-8176 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA ∆VBR(DSS)/∆TJ Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics Symbol VGS = 10V, ID = 42A 3 Forward Transconductance TJ = 25°C VGS = 0V TJ = 125°C VGS = ±30V Min Test Conditions VDS = 50V, ID = 42A Typ Output Capacitance 65 13500 185 1455 845 425 340 75 155 60 70 155 50 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Max 0.065 5 Unit V V/°C Ω V mV/°C 250 1000 ±100 µA nA TJ = 25°C unless otherwise specified Parameter gfs VDS = 500V Typ 500 0.60 0.055 2.5 4 -10 Reference to 25°C, ID = 250µA Breakdown Voltage Temperature Coefficient RDS(on) Min APT84F50B2_L VGS = 0V, VDS = 25V f = 1MHz Co(cr) 4 Effective Output Capacitance, Charge Related Co(er) 5 Effective Output Capacitance, Energy Related Max Unit S pF VGS = 0V, VDS = 0V to 333V Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tr td(off) tf Current Rise Time Turn-Off Delay Time VGS = 0 to 10V, ID = 42A, VDS = 250V Resistive Switching VDD = 333V, ID = 42A RG = 2.2Ω 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current dv/dt Peak Recovery dv/dt Test Conditions Min D MOSFET symbol showing the integral reverse p-n junction diode (body diode) S ISD = 42A, TJ = 25°C, VGS = 0V TJ = 25°C TJ = 125°C TJ = 25°C diSD/dt = 100A/µs TJ = 125°C VDD = 100V TJ = 25°C Max Unit 84 A G ISD = 42A 3 Typ TJ = 125°C 270 282 499 1.67 4.36 12 17.8 1.0 320 600 ISD ≤ 42A, di/dt ≤1000A/µs, VDD = 333V, TJ = 125°C V ns µC A 20 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 050-8176 Rev B 05-2009 2 Starting at TJ = 25°C, L = 2.08mH, RG = 25Ω, IAS = 42A. 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -3.14E-7/VDS^2 + 7.31E-8/VDS + 2.09E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. 350 V GS = 10V T = 125°C 200 TJ = 25°C 150 100 TJ = 150°C = 7,8 & 10V GS 120 ID, DRIAN CURRENT (A) 6V 100 80 60 40 5V 20 TJ = 125°C 0 0 5 10 15 20 25 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 4.5V 0 Figure 1, Output Characteristics 2.5 Figure 2, Output Characteristics 280 NORMALIZED TO VGS = 10V @ 42A VDS> ID(ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 240 ID, DRAIN CURRENT (A) 2.0 1.5 1.0 0.5 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 200 TJ = -55°C 160 TJ = 25°C 120 TJ = 125°C 80 40 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 0 120 0 1 2 3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 20,000 Ciss 10,000 TJ = -55°C 80 C, CAPACITANCE (pF) TJ = 25°C TJ = 125°C 60 40 1000 Coss 100 Crss 20 16 10 20 30 40 50 60 70 80 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 12 VDS = 100V 10 VDS = 250V 8 6 VDS = 400V 4 2 0 0 280 ID = 42A 14 0 10 90 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 240 200 160 TJ = 25°C 120 TJ = 150°C 80 40 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 05-2009 0 Rev B 0 ISD, REVERSE DRAIN CURRENT (A) gfs, TRANSCONDUCTANCE 100 VGS, GATE-TO-SOURCE VOLTAGE (V) 8 050-8176 ID, DRAIN CURRENT (A) TJ = -55°C 250 50 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE V J 140 300 0 APT84F50B2_L 160 100 IDM ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 13µs 10 100µs 1ms 10ms Rds(on) 100ms DC line 1 0.1 APT84F50B2_L 300 300 TJ = 125°C TC = 75°C 1 13µs 10 100µs 1ms Rds(on) 10ms 100ms DC line TJ = 150°C TC = 25°C 1 0.1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area IDM Scaling for Different Case & Junction Temperatures: ID = ID(T = 25°C)*(TJ - TC)/125 C 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 0.10 D = 0.9 0.08 0.7 0.06 0.5 0.04 Note: t1 0.3 t2 t1 = Pulse Duration SINGLE PULSE 0.02 0 l PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.12 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.1 0.05 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 1.0 TO-264 (L) Package Outline T-MAX™ (B2) Package Outline e3 100% Sn Plated 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drain Drain 20.80 (.819) 21.46 (.845) 05-2009 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 25.48 (1.003) 26.49 (1.043) 2.87 (.113) 3.12 (.123) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 19.81 (.780) 21.39 (.842) Gate Drain 050-8176 Rev B Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 2.29 (.090) 2.69 (.106) Gate Drain Source