Microsemi APT84M50B2 N-channel mosfet Datasheet

APT84M50B2
APT84M50L
500V, 84A, 0.065Ω Max
N-Channel MOSFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
T-MaxTM
TO-264
APT84M50B2
APT84M50L
D
Single die MOSFET
G
S
TYPICAL APPLICATIONS
FEATURES
• Fast switching with low EMI/RFI
• PFC and other boost converter
• Low RDS(on)
• Buck converter
• Ultra low Crss for improved noise immunity
• Two switch forward (asymmetrical bridge)
• Low gate charge
• Single switch forward
• Avalanche energy rated
• Flyback
• RoHS compliant
• Inverters
Absolute Maximum Ratings
Symbol
ID
Parameter
Unit
Ratings
Continuous Drain Current @ TC = 25°C
84
Continuous Drain Current @ TC = 100°C
53
A
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy 2
1845
mJ
IAR
Avalanche Current, Repetitive or Non-Repetitive
42
A
1
270
Thermal and Mechanical Characteristics
Min
Characteristic
Typ
Max
Unit
W
PD
Total Power Dissipation @ TC = 25°C
1135
RθJC
Junction to Case Thermal Resistance
0.11
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
150
°C
TL
Soldering Temperature for 10 Seconds (1.6mm from case)
WT
Package Weight
Torque
-55
300
0.22
oz
6.2
g
10
in·lbf
1.1
N·m
Mounting Torque ( TO-264 Package), 4-40 or M3 screw
MicrosemiWebsite-http://www.microsemi.com
Rev D 5 -2009
TJ,TSTG
°C/W
0.11
050-8095
Symbol
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol
Parameter
VBR(DSS)
Drain-Source Breakdown Voltage
ΔVBR(DSS)/ΔTJ
Breakdown Voltage Temperature Coefficient
RDS(on)
Drain-Source On Resistance
VGS(th)
Gate-Source Threshold Voltage
ΔVGS(th)/ΔTJ
IGSS
Gate-Source Leakage Current
Dynamic Characteristics
Symbol
Forward Transconductance
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
3
VDS = 500V
TJ = 25°C
VGS = 0V
TJ = 125°C
Typ
Max
0.60
0.055
4
-10
0.065
5
100
500
±100
VGS = ±30V
Unit
V
V/°C
Ω
V
mV/°C
µA
nA
TJ = 25°C unless otherwise specified
Parameter
gfs
500
VGS = VDS, ID = 2.5mA
Threshold Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Min
VGS = 10V, ID = 42A
3
IDSS
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 250µA
APT84M50B2_L
Min
Test Conditions
VDS = 50V, ID = 42A
4
Effective Output Capacitance, Charge Related
Co(er)
5
Effective Output Capacitance, Energy Related
Max
65
13500
185
1455
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr)
Typ
Unit
S
pF
845
VGS = 0V, VDS = 0V to 333V
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
tr
td(off)
tf
Current Rise Time
Turn-Off Delay Time
425
340
75
155
60
70
155
50
VGS = 0 to 10V, ID = 42A,
VDS = 250V
Resistive Switching
VDD = 333V, ID = 42A
RG = 2.2Ω 6 , VGG = 15V
Current Fall Time
nC
ns
Source-Drain Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
dv/dt
Peak Recovery dv/dt
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
Min
Typ
D
Max
Unit
84
A
G
270
S
ISD = 42A, TJ = 25°C, VGS = 0V
ISD = 42A 3
diSD/dt = 100A/µs, TJ = 25°C
ISD ≤ 42A, di/dt ≤1000A/µs, VDD = 100V,
TJ = 125°C
1.0
720
20
V
ns
µC
8
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 2.08mH, RG = 25Ω, IAS = 42A.
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
050-8095
Rev D 5 -2009
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -3.14E-7/VDS^2 + 7.31E-8/VDS + 2.09E-10.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT84M50B2_L
160
350
V
GS
= 10V
T = 125°C
300
TJ = -55°C
ID, DRIAN CURRENT (A)
GS
= 7,8 & 10V
250
200
TJ = 25°C
150
100
TJ = 150°C
120
6V
100
80
60
40
5V
50
20
4.5V
TJ = 125°C
0
0
0
5
10
15
20
25
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
0
Figure 2, Output Characteristics
280
NORMALIZED TO
VDS> ID(ON) x RDS(ON) MAX.
VGS = 10V @ 42A
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
240
2.0
ID, DRAIN CURRENT (A)
1.5
1.0
0.5
200
TJ = -55°C
160
TJ = 25°C
120
TJ = 125°C
80
40
0
-55 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
0
120
0
1
2
3
4
5
6
7
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
20,000
Ciss
10,000
C, CAPACITANCE (pF)
TJ = -55°C
TJ = 25°C
80
TJ = 125°C
60
40
1000
Coss
100
Crss
20
0
0
16
10
20 30 40 50 60 70 80
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
100
200
300
400
500
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
12
VDS = 100V
10
VDS = 250V
8
6
VDS = 400V
4
2
0
0
280
ID = 42A
14
0
10
90
100
200
300
400
500
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
ISD, REVERSE DRAIN CURRENT (A)
gfs, TRANSCONDUCTANCE
100
VGS, GATE-TO-SOURCE VOLTAGE (V)
8
240
200
160
TJ = 25°C
120
TJ = 150°C
80
40
0
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
Rev D 5 -2009
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
Figure 1, Output Characteristics
2.5
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
050-8095
ID, DRAIN CURRENT (A)
V
J
140
APT84M50B2_L
300
300
100
IDM
13µs
10
100µs
1ms
10ms
Rds(on)
100ms
DC line
1
0.1
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
100
13µs
10
100µs
1ms
Rds(on)
10ms
100ms
DC line
TJ = 150°C
TC = 25°C
1
Scaling for Different Case & Junction
Temperatures:
ID = ID(T = 25°C)*(TJ - TC)/125
TJ = 125°C
TC = 75°C
1
IDM
0.1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
C
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
0.10
D = 0.9
0.08
0.7
0.06
0.5
Note:
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.12
0.04
t1
0.3
t2
t1 = Pulse Duration
SINGLE PULSE
0.02
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.1
0.05
0
10-5
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
1.0
TO-264 (L) Package Outline
T-MAX™ (B2) Package Outline
e3 100% Sn Plated
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
Drain
Drain
20.80 (.819)
21.46 (.845)
050-8095
Rev D 5 -2009
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Gate
Drain
Source
Source
2.21 (.087)
2.59 (.102)
2.29 (.090)
2.69 (.106)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Similar pages