APTC60DHM24T3G Asymmetrical Bridge Super Junction MOSFET Power Module 13 VDSS = 600V RDSon = 24mΩ max @ Tj = 25°C ID = 95A @ Tc = 25°C Application 14 • • • Q1 CR3 Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives 18 Features 22 7 23 8 • 19 Q4 CR2 4 3 29 30 • • 32 31 15 16 • • R1 28 27 26 25 23 22 20 19 18 29 16 30 15 Benefits • 14 31 13 32 2 3 4 7 - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23… • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 95 70 260 ±20 24 462 15 3 1900 Unit V A August, 2009 ID Parameter Drain - Source Breakdown Voltage V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTC60DHM24T3G – Rev 1 Symbol VDSS APTC60DHM24T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 47.5A VGS = VDS, ID = 5mA VGS = ±20 V, VDS = 0V 2.1 3 Min Typ 14.4 17 Max 350 600 24 3.9 200 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 25V f = 1MHz nF 300 VGS = 10V VBus = 300V ID = 95A nC 68 102 21 Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 95A RG = 2.5Ω 30 ns 100 45 Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5Ω Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5Ω 1350 µJ 1040 2200 µJ 1270 Diode ratings and characteristics IRM Min IF DC Forward Current VF Diode Forward Voltage VR=600V Reverse Recovery Time Qrr Reverse Recovery Charge IF = 60A VR = 400V di/dt =200A/µs www.microsemi.com 25 500 Tj = 125°C 60 1.7 2 1.4 Tj = 25°C 70 Tj = 125°C Tj = 25°C 140 100 Tj = 125°C 690 IF = 60A IF = 120A Unit V Tj = 25°C Tj = 125°C Tc = 80°C IF = 60A trr Max 600 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ µA A 2.3 V August, 2009 VRRM Test Conditions ns nC 2-7 APTC60DHM24T3G – Rev 1 Symbol Characteristic APTC60DHM24T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ CoolMOS diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 4000 -40 -40 -40 2.5 Max 0.27 0.85 Unit °C/W V 150 125 100 4.7 110 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = Typ 50 5 3952 4 Max Unit kΩ % K % R25 T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T − ⎟⎟⎥ exp ⎢ B25 / 85 ⎜⎜ ⎝ T25 T ⎠⎦⎥ ⎣⎢ 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-7 APTC60DHM24T3G – Rev 1 28 17 1 August, 2009 SP3 Package outline (dimensions in mm) APTC60DHM24T3G Typical CoolMOS Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 280 720 VGS=15&10V 6.5V 560 ID, Drain Current (A) 6V 480 400 5.5V 320 240 5V 160 4.5V 80 4V 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 240 200 160 120 80 TJ=125°C 40 TJ=25°C 0 0 5 10 15 20 25 0 Normalized to VGS=10V @ 95A 1.25 1.2 VGS=10V 1.15 1.1 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 100 RDS(on) vs Drain Current 1.3 VGS=20V 1.05 1 0.95 0.9 ID, DC Drain Current (A) 80 60 40 20 0 0 40 80 120 160 200 240 280 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 August, 2009 RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) 4-7 APTC60DHM24T3G – Rev 1 ID, Drain Current (A) 640 1.1 1.0 0.9 0.8 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.0 1.5 1.0 0.5 0.0 25 TJ, Junction Temperature (°C) 1000 1.0 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1.1 0.9 0.8 0.7 limited by RDSon 100 100 µs 1 ms Single pulse TJ=150°C TC=25°C 10 0.6 10 ms 1 25 50 75 100 125 150 1 100000 Coss Ciss 10000 1000 Crss 100 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) 1000 12 ID=95A TJ=25°C 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) August, 2009 0 100 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 1000000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) VGS=10V ID= 95A 2.5 www.microsemi.com 5-7 APTC60DHM24T3G – Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60DHM24T3G APTC60DHM24T3G Delay Times vs Current 140 Rise and Fall times vs Current 70 td(off) 100 VDS=400V RG=2.5Ω TJ=125°C L=100µH 80 60 40 VDS=400V RG=2.5Ω TJ=125°C L=100µH 60 tr and tf (ns) td(on) 20 50 40 30 tr 20 10 0 0 0 20 40 60 80 100 120 140 160 0 20 40 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy (mJ) Switching Energy (mJ) Eon Eoff 2 1 0 VDS=400V ID=95A TJ=125°C L=100µH 4 3 Eoff Eon 2 1 0 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) 0 ZVS 200 ZCS 150 IDR, Reverse Drain Current (A) 250 VDS=400V D=50% RG=2.5Ω TJ=125°C TC=75°C 100 hard switching 50 0 20 30 40 50 60 70 ID, Drain Current (A) 80 90 10 15 20 25 Source to Drain Diode Forward Voltage 1000 TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) August, 2009 10 5 Gate Resistance (Ohms) Operating Frequency vs Drain Current 300 Frequency (kHz) 80 100 120 140 160 5 VDS=400V RG=2.5Ω TJ=125°C L=100µH 3 60 ID, Drain Current (A) Switching Energy vs Current 4 tf www.microsemi.com 6-7 APTC60DHM24T3G – Rev 1 td(on) and td(off) (ns) 120 APTC60DHM24T3G Typical diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.9 0.9 0.8 0.7 0.7 0.6 0.5 0.5 0.4 0.3 0.3 0.2 0.1 0.05 0.1 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 160 TJ=125°C 80 TJ=25°C 40 0 0.0 0.5 1.0 1.5 2.0 2.5 125 30 A 100 60 A 75 50 3.0 0 200 400 600 800 -diF/dt (A/µs) QRR vs. Current Rate Charge TJ=125°C VR=400V 1.5 120 A 60 A 30 A 1.0 0.5 0.0 0 200 400 600 800 1000 1200 IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) VF, Anode to Cathode Voltage (V) 2.0 1000 1200 IRRM vs. Current Rate of Charge 40 TJ=125°C VR=400V 35 30 120 A 25 60 A 20 15 10 5 30 A 0 0 200 -diF/dt (A/µs) 400 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage DC Forward Current vs. Case Temp. 500 100 400 80 300 60 IF (A) C, Capacitance (pF) TJ=125°C VR=400V 120 A 200 40 100 20 0 Duty Cycle = 0.5 TJ=175°C August, 2009 120 150 0 1 10 100 1000 VR, Reverse Voltage (V) 25 50 75 100 125 150 175 Case Temperature (°C) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7-7 APTC60DHM24T3G – Rev 1 IF, Forward Current (A) Trr vs. Current Rate of Charge 175 200