ADPOW APTC60DSKM35T3 Dual buck chopper super junction mosfet power module Datasheet

APTC60DSKM35T3
Dual buck chopper
VDSS = 600V
RDSon = 35mΩ max @ Tj = 25°C
ID = 72A @ Tc = 25°C
Super Junction MOSFET
Power Module
Application
• AC and DC motor control
• Switched Mode Power Supplies
13 14
Q1
Q2
11
18
22
Features
•
7
19
10
23
CR1
29
8
30
CR2
31
15
32
16
R1
28 27 26 25
23 22
•
•
•
•
20 19 18
29
16
30
15
31
14
13
32
2
3
4
7
8
10 11 12
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a single
buck of twice the current capability
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
600
72
54
200
±20
35
416
20
1
1800
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
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1-6
APTC60DSKM35T3 – Rev 0 September, 2004
Absolute maximum ratings
APTC60DSKM35T3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Test Conditions
VGS = 0V, ID = 375µA
VGS = 0V,VDS = 600V
VGS = 0V,VDS = 600V
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
VGS = 10V, ID = 72A
VGS = VDS, ID = 5.4mA
VGS = ±20 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Maximum Reverse Leakage Current
IF(A V)
Maximum Average Forward Current
50% duty cycle
Diode Forward Voltage
IF = 60A
IF = 120A
IF = 60A
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VR=600V
IF = 60A
VR = 400V
di/dt=200A/µs
1
40
375
35
3.9
±150
mΩ
V
nA
Max
Unit
Min
Typ
14
5.13
0.42
518
Unit
V
µA
nF
58
nC
222
Test Conditions
IRM
Max
3
21
30
84
1340
µJ
1960
2192
µJ
2412
Min
600
Tj = 25°C
Tj = 125°C
Tc = 70°C
ns
283
Inductive switching @ 25°C
VGS = 15V, VBus = 400V
ID = 72A, R G = 2.5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 400V
ID = 72A, R G = 2.5Ω
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
Typ
2.1
VGS = 10V
VBus = 300V
ID = 72A
Diode ratings and characteristics
trr
Tj = 25°C
Tj = 125°C
Inductive Switching @ 125°C
VGS = 15V
VBus = 400V
ID = 72A
R G = 2.5Ω
Tf
VF
Min
600
Typ
Max
250
750
Tj = 125°C
60
2.2
2.3
1.4
Tj = 25°C
55
Tj = 125°C
151
Tj = 25°C
121
Tj = 125°C
999
Unit
V
µA
A
2.7
V
ns
nC
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
APT website – http://www.advancedpower.com
2-6
APTC60DSKM35T3 – Rev 0 September, 2004
Symbol
BVDSS
APTC60DSKM35T3
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Typ
IGBT
Diode
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.16 K
Min
R 25

 1
1 
exp  B25 / 85 
− 
T
T

 25

Unit
°C/W
V
150
125
100
4.7
110
M4
Temperature sensor NTC
RT =
2500
-40
-40
-40
Max
0.3
0.9
Typ
68
4080
Max
°C
N.m
g
Unit
kΩ
K
T: Thermistor temperature
RT : Thermistor value at T
28
17
1
12
APT website – http://www.advancedpower.com
3-6
APTC60DSKM35T3 – Rev 0 September, 2004
Package outline
APTC60DSKM35T3
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.35
0.3
0.9
0.25
0.7
0.2
0.5
0.15
0.3
0.1
0.1
0.05
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
VGS=15&10V
6.5V
6V
5.5V
5V
4.5V
4V
VDS > ID(on)xRDS (on)MAX
250µs pulse test @ < 0.5 duty cycle
240
200
160
120
80
TJ=125°C
40
TJ=25°C
TJ=-55°C
0
0
5
10
15
20
VDS, Drain to Source Voltage (V)
25
0
Normalized to
VGS=10V @ 36A
1.05
VGS =10V
VGS=20V
1
7
DC Drain Current vs Case Temperature
80
RDS(on) vs Drain Current
1.1
1
2
3
4
5
6
VGS, Gate to Source Voltage (V)
0.95
0.9
70
60
50
40
30
20
10
0
0
20
40
60
80
I D, Drain Current (A)
100
120
25
50
75
100
125
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
150
4-6
APTC60DSKM35T3 – Rev 0 September, 2004
RDS(on) Drain to Source ON Resistance
I D, Drain Current (A)
280
I D, DC Drain Current (A)
ID, Drain Current (A)
Low Voltage Output Characteristics
400
360
320
280
240
200
160
120
80
40
0
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
ON resistance vs Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
1.1
I D, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
1.2
1.0
0.9
0.8
0.7
0.6
100 µs
limited by RDSon
100
1 ms
10
DC line
1
10 ms
Single pulse
TJ =150°C
0.1
-50 -25
0
25
50
75 100 125 150
1
Ciss
10000
Coss
1000
Crss
100
10
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
100
1000
Gate Charge vs Gate to Source Voltage
VGS , Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
10
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
C, Capacitance (pF)
V GS=10V
ID= 72A
14
ID=72A
TJ=25°C
12
10
V DS=120V
VDS=300V
8
V DS =480V
6
4
2
0
0
100
APT website – http://www.advancedpower.com
200 300 400
Gate Charge (nC)
500
600
5-6
APTC60DSKM35T3 – Rev 0 September, 2004
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.2
RDS(on), Drain to Source ON resistance
(Normalized)
APTC60DSKM35T3
APTC60DSKM35T3
Delay Times vs Current
350
td(off)
300
250
VDS=400V
RG=2.5Ω
TJ=125°C
L=100µH
200
150
100
50
80
40
40
60
80
100
tr
20
0
20
0
120
0
20
ID, Drain Current (A)
Switching Energy (mJ)
Eon
100
120
6
Eoff
Eon
4
2
0
40
60
80 100
ID, Drain Current (A)
120
ZCS
ZVS
100
80
VDS=400V
D=50%
RG=2.5Ω
TJ=125°C
TC=75°C
hard
switching
0
15 20 25 30 35 40 45 50 55 60 65
ID, Drain Current (A)
0
5
10
15
20
25
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
TJ=150°C
100
TJ =25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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6-6
APTC60DSKM35T3 – Rev 0 September, 2004
20
120
Frequency (kHz)
VDS=400V
ID=72A
T J=125°C
L=100µH
8
I DR, Reverse Drain Current (A)
Switching Energy (mJ)
Eoff
Operating Frequency vs Drain Current
20
80
Switching Energy vs Gate Resistance
140
40
60
10
VDS=400V
RG=2.5Ω
TJ=125°C
L=100µH
0
60
40
ID, Drain Current (A)
Switching Energy vs Current
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
tf
60
td(on)
0
VDS=400V
RG=2.5Ω
T J=125°C
L=100µH
100
tr and t f (ns)
td(on) and td(off) (ns)
Rise and Fall times vs Current
120
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