APTDF100H120G Diode Full Bridge Power Module VRRM = 1200V IC = 100A @ Tc = 60°C Application + AC1 • • • • AC2 Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features • • • • • • - • Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Benefits - • • • • • • AC1 Absolute maximum ratings Symbol VR VRRM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage IF(A V) Maximum Average Forward Current IF(RMS) IFSM RMS Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 8.3ms Duty cycle = 50% TC = 25°C TC = 60°C TC = 45°C TC = 45°C Max ratings Unit 1200 V 120 100 135 500 A June, 2006 + Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APTDF100H120G – Rev 1 • AC2 APTDF100H120G All ratings @ Tj = 25°C unless otherwise specified Symbol Characteristic VF Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Dynamic Characteristics Symbol Characteristic trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Test Conditions IF = 100A IF = 150A IF = 100A Tj = 125°C Tj = 25°C VR = 1200V Tj = 125°C IF = 100A VR = 800V di/dt = 200A/µs IF = 100A VR = 800V di/dt=1000A/µs Min Typ Tj = 25°C 45 Tj = 25°C Tj = 125°C Tj = 25°C 385 480 1055 Tj = 125°C Tj = 25°C 5240 6 Tj = 125°C 19 Tj = 125°C Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 2.5 To Heatsink M5 Unit V µA pF Max Unit ns ns nC A 210 ns 9.4 µC 70 A Typ Max 0.55 175 125 100 4.7 160 Unit °C/W V °C N.m g June, 2006 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Max 3 110 Test Conditions IF=1A,VR=30V di/dt = 100A/µs Typ 2.4 2.7 1.8 100 500 VR = 1200V Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Min www.microsemi.com 2-4 APTDF100H120G – Rev 1 Electrical Characteristics APTDF100H120G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.9 0.5 0.7 0.4 0.5 0.3 0.3 0.2 0.1 0.05 0.1 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage Trr vs. Current Rate of Charge 250 trr, Reverse Recovery Time (ns) T J=175°C 200 TJ=125°C 150 100 T J=-55°C 50 TJ=25°C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 600 T J=125°C VR=800V 500 400 150 A 300 200 100 A 50 A 100 0 0 3.5 200 400 TJ=125°C VR=800V 10 150 A 100 A 8 6 50 A 4 2 0 200 400 600 800 1000 1200 80 TJ=125°C VR=800V 70 50 A 50 40 30 20 10 0 200 400 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage Max. Average Forward Current vs. Case Temp. 140 700 Duty Cycle = 0.5 T J=175°C 120 600 100 400 300 80 June, 2006 500 IF(AV) (A) C, Capacitance (pF) 100 A 150 A 60 -diF/dt (A/µs) 800 800 1000 1200 IRRM vs. Current Rate of Charge QRR vs. Current Rate Charge 12 600 -diF/dt (A/µs) IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) VF, Anode to Cathode Voltage (V) 60 40 200 20 100 0 0 1 10 100 VR, Reverse Voltage (V) 1000 0 25 50 75 100 125 150 175 Case Temperature (ºC) www.microsemi.com 3-4 APTDF100H120G – Rev 1 IF, Forward Current (A) 300 APTDF100H120G SP4 Package outline (dimensions in mm) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 APTDF100H120G – Rev 1 June, 2006 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :