Microsemi APTDF400AK100G Diode phase leg power module Datasheet

APTDF400AK100G
Diode Phase leg
Power Module
VRRM = 1000V
IC = 400A @ Tc = 70°C
Application
K1
•
•
•
•
•
A1/K2
Anti-Parallel diode
Uninterruptible Power Supply (UPS)
Induction heating
Welding equipment
High speed rectifiers
Features
•
•
•
•
•
•
A2
•
A1/K2
A2
Benefits
•
•
•
•
•
•
Outstanding performance at high frequency
operation
Low losses
Low noise switching
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
Absolute maximum ratings
Symbol
VR
VRRM
Parameter
Maximum DC reverse Voltage
Maximum Peak Repetitive Reverse Voltage
IF(A V)
Maximum Average Forward
Current
IF(RMS)
IFSM
RMS Forward Current
Duty cycle = 50%
Non-Repetitive Forward Surge Current
8.3ms
Duty cycle = 50%
TC = 25°C
TC = 70°C
TC = 45°C
TC = 45°C
Max ratings
Unit
1000
V
500
400
500
3000
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-4
APTDF400AK100G – Rev 1 June, 2006
K1
Ultra fast recovery times
Soft recovery characteristics
High blocking voltage
High current
Low leakage current
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
APTDF400AK100G
All ratings @ Tj = 25°C unless otherwise specified
Symbol Characteristic
VF
Diode Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance
Dynamic Characteristics
Symbol Characteristic
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Test Conditions
IF = 400A
IF = 600A
IF = 400A
Tj = 125°C
Tj = 25°C
VR = 1000V
Tj = 125°C
Min
IF = 400A
VR = 667V
Min
Tj = 25°C
45
Tj = 25°C
Tj = 125°C
Tj = 25°C
290
340
2.7
Tj = 125°C
Tj = 25°C
14.6
24
Tj = 125°C
72
Tj = 125°C
di/dt = 4000A/µs
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Characteristic
Junction to Case Thermal Resistance
Min
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Torque
Mounting torque
2500
-40
-40
-40
3
2
Wt
Package Weight
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
To heatsink
For terminals
www.microsemi.com
Typ
M6
M5
Unit
V
480
Test Conditions
IF = 400A
VR = 667V
di/dt = 800A/µs
Max
2.7
250
1000
VR = 1000V
IF=1A,VR=30V
di/dt = 400A/µs
Typ
2.1
2.3
1.7
µA
pF
Max
Unit
ns
ns
µC
A
160
ns
28.4
µC
280
A
Typ
Max
0.14
175
125
100
5
3.5
280
Unit
°C/W
V
°C
N.m
g
2-4
APTDF400AK100G – Rev 1 June, 2006
Electrical Characteristics
APTDF400AK100G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.16
0.14
0.9
0.12
0.7
0.1
0.08
0.5
0.06
0.3
0.04
0.1
0.05
0.02
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
Trr vs. Current Rate of Charge
trr, Reverse Recovery Time (ns)
T J=175°C
1000
800
T J=125°C
600
400
T J=-55°C
200
T J=25°C
0
0.0
0.5
1.0
1.5
2.0
2.5
400
T J=125°C
VR=667V
350
300
250
600 A
200
400 A
150
200 A
100
50
0
0
3.0
800 1600 2400 3200 4000 4800
-diF/dt (A/µs)
IRRM vs. Current Rate of Charge
QRR vs. Current Rate Charge
36
TJ=125°C
VR=667V
32
600 A
28
400 A
24
20
200 A
16
12
8
0
800
1600 2400 3200 4000 4800
320
IRRM, Reverse Recovery Current (A)
QRR, Reverse Recovery Charge (µC)
VF, Anode to Cathode Voltage (V)
T J=125°C
VR=667V
280
200 A
160
120
80
40
0
800 1600 2400 3200 4000 4800
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
Max. Average Forward Current vs. Case Temp.
600
2800
Duty Cycle = 0.5
T J=175°C
500
2400
2000
IF(AV) (A)
C, Capacitance (pF)
400 A
200
-diF/dt (A/µs)
3200
600 A
240
1600
1200
800
400
300
200
100
400
0
0
1
10
100
VR, Reverse Voltage (V)
1000
0
25
50
75
100 125 150 175
Case Temperature (ºC)
www.microsemi.com
3-4
APTDF400AK100G – Rev 1 June, 2006
IF, Forward Current (A)
1200
APTDF400AK100G
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
4-4
APTDF400AK100G – Rev 1 June, 2006
SP6 Package outline (dimensions in mm)
Similar pages