Microsemi APTGF330SK60D3G Buck chopper npt igbt power module Datasheet

APTGF330SK60D3G
Buck Chopper
NPT IGBT Power Module
Q1
3
4
5
1
2
VCES = 600V
IC = 330A @ Tc = 80°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
Features
• Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• High level of integration
• M6 power connectors
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
Absolute maximum ratings
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
TC = 25°C
Reverse Bias Safe Operating Area
Tj = 125°C
800A @ 520V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
September, 2008
IC
Max ratings
600
520
330
800
±20
1560
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
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1-5
APTGF330SK60D3G – Rev 1
Symbol
VCES
APTGF330SK60D3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Min
VGE = 0V, VCE = 600V
Tj = 25°C
VGE = 15V
IC = 400A
Tj = 125°C
VGE = VCE , IC = 7.5 mA
VGE = 20V, VCE = 0V
5.0
Typ
1.95
2.2
5.8
Max
Unit
500
2.45
µA
6.5
1200
V
nA
Max
Unit
V
Dynamic Characteristics
Symbol Characteristic
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
QG
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Gate charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
Isc
Short Circuit data
Test Conditions
VGE = 0V ; VCE = 25V
f = 1MHz
VGE=15V, IC=400A
VCE=300V
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 400A
RG = 8Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 300V
IC = 400A
RG = 8Ω
VGE = ±15V
Tj = 125°C
VBus = 300V
IC = 400A
Tj = 125°C
RG = 8Ω
VGE ≤15V ; VBus = 360V
tp ≤ 10µs ; Tj = 125°C
Min
Test Conditions
Min
600
Typ
18
1.6
nF
1.3
µC
150
72
530
ns
40
160
75
ns
550
50
18
mJ
17
1800
A
Reverse diode ratings and characteristics
IF
Maximum Reverse Leakage Current
VR = 600V
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 400A
VGE = 0V
IF = 400A
VR = 300V
di/dt =4400A/µs
Err
Reverse Recovery Energy
Tj = 25°C
Tj = 125°C
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
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Max
750
1000
400
1.25
1.2
150
250
27
44
5.6
9.2
Unit
V
µA
A
1.6
V
September, 2008
IRRM
Typ
ns
µC
mJ
2-5
APTGF330SK60D3G – Rev 1
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APTGF330SK60D3G
Thermal and package characteristics
Symbol Characteristic
Min
IGBT
Diode
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
For terminals
To Heatsink
M6
M6
2500
-40
-40
-40
3
3
Typ
Max
0.08
0.15
Unit
°C/W
V
150
125
125
5
5
350
°C
N.m
g
D3 Package outline (dimensions in mm)
1°
A
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3-5
APTGF330SK60D3G – Rev 1
September, 2008
DÉTAIL A
APTGF330SK60D3G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
800
800
TJ = 125°C
VGE=15V
TJ=25°C
600
TJ=125°C
IC (A)
IC (A)
600
400
VGE=20V
VGE=12V
400
VGE=9V
200
200
0
0
0
0.5
1
1.5
2
VCE (V)
2.5
3
3.5
0
40
600
3
VCE (V)
VCE = 300V
VGE = 15V
RG = 8 Ω
TJ = 125°C
30
E (mJ)
IC (A)
2
4
5
Energy losses vs Collector Current
Transfert Characteristics
800
1
400
Eon
Eoff
20
TJ=125°C
Err
10
200
TJ=25°C
0
0
5
6
7
8
9
10
11
0
12
200
400
Switching Energy Losses vs Gate Resistance
50
30
Eon
800
Eoff
IC (A)
E (mJ)
40
800
Reverse Safe Operating Area
1000
VCE = 300V
VGE =15V
IC = 400A
TJ = 125°C
600
IC (A)
VGE (V)
20
600
400
VGE=15V
TJ=125°C
RG=8 Ω
200
10
Err
0
0
0
10
20
30
Gate Resistance (ohms)
40
0
100
200
300
400
500
600
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.07
0.06
0.05
0.04
0.03
0.02
0.9
September, 2008
0.08
IGBT
0.7
0.5
0.3
0.1
0.01
0
0.00001
Single Pulse
0.05
0.0001
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
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1
10
4-5
APTGF330SK60D3G – Rev 1
Thermal Impedance (°C/W)
0.09
APTGF330SK60D3G
VCE=300V
D=50%
RG=8Ω
TJ=125°C
TC=75°C
60
50
ZVS
40
600
ZCS
30
hard
switching
20
400
TJ=125°C
200
TJ=25°C
10
0
0
0
100
200
300
IC (A)
400
0
500
0.3
0.6
0.9
VF (V)
1.2
1.5
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.1
Diode
0.08
0.06
0.9
0.7
0.5
0.02
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
September, 2008
0.04
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGF330SK60D3G – Rev 1
Thermal Impedance (°C/W)
Forward Characteristic of diode
800
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
70
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