APTGF50A120T1G Phase leg NPT IGBT Power Module 5 6 Q1 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 11 CR1 7 8 3 4 Q2 Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration NTC CR2 9 10 1 2 VCES = 1200V IC = 50A @ Tc = 80°C 12 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings ICM VGE PD RBSOA Tc = 25°C Tc = 80°C Tc = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tj = 150°C Max ratings 1200 75 50 150 ±20 312 100A @ 1200V Unit V A August, 2007 IC Parameter Collector - Emitter Breakdown Voltage V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTGF50A120T1G – Rev 0 Symbol VCES APTGF50A120T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C Tj = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE, IC = 1 mA VGE = 20 V, VCE = 0V Min Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Typ 3.2 4.0 4.5 Max 250 500 3.7 Unit 6.5 100 V nA Max Unit µA V Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time VGS = 15V VBus = 600V IC = 50A Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 50A RG = 5 Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A RG = 5 Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 50A Tj = 125°C RG = 5 Ω Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Fall Time Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Typ 3450 330 220 330 35 200 35 pF nC 65 ns 320 30 35 65 ns 360 40 6.9 mJ 3.05 Reverse diode ratings and characteristics IRM Min IF DC Forward Current VF Diode Forward Voltage VR=1200V IF = 60A IF = 120A Reverse Recovery Time Qrr Reverse Recovery Charge IF = 60A VR = 800V di/dt =400A/µs www.microsemi.com Unit V Tj = 25°C Tj = 125°C Tc = 80°C IF = 60A trr Max 1200 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ 150 600 60 2.6 3.2 Tj = 125°C 1.8 Tj = 25°C 300 Tj = 125°C Tj = 25°C 380 720 Tj = 125°C 3400 µA A 3.1 V August, 2007 VRRM Test Conditions ns nC 2–6 APTGF50A120T1G – Rev 0 Symbol Characteristic APTGF50A120T1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ IGBT Diode To heatsink M4 2500 -40 -40 -40 2.5 Max 0.4 0.65 Unit °C/W V 150 125 100 4.7 80 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = Min Typ 50 3952 Max Unit kΩ K R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 − T25 T See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTGF50A120T1G – Rev 0 August, 2007 SP1 Package outline (dimensions in mm) APTGF50A120T1G Typical Performance Curve Output characteristics (VGE=15V) 250µs Pulse Test < 0.5% Duty cycle 120 TJ=25°C TJ=125°C 80 40 2 4 6 VCE, Collector to Emitter Voltage (V) TJ=25°C 20 TJ=125°C 10 0 8 1 2 3 VCE, Collector to Emitter Voltage (V) VGE, Gate to Emitter Voltage (V) TJ=25°C 150 100 TJ=125°C 50 TJ=25°C 0 0 4 8 12 VGE, Gate to Emitter Voltage (V) 8 7 Ic=100A Ic=50A 4 3 2 Ic=25A 1 0 9 VCE=600V 12 10 VCE=960V 8 6 4 2 0 50 100 150 200 250 300 350 Gate Charge (nC) 6 5 14 0 VCE, Collector to Emitter Voltage (V) TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle VCE=240V IC = 50A TJ = 25°C 16 16 On state Voltage vs Gate to Emitter Volt. 9 18 10 11 12 13 14 15 VGE, Gate to Emitter Voltage (V) 6 Breakdown Voltage vs Junction Temp. 3 Ic, DC Collector Current (A) 1.00 0.95 0.90 0.85 Ic=25A 2 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 1 0 70 1.05 Ic=50A 4 25 1.20 1.10 Ic=100A 5 16 1.15 On state Voltage vs Junction Temperature 0.80 50 75 100 TJ, Junction Temperature (°C) 125 DC Collector Current vs Case Temperature 60 50 August, 2007 250µs Pulse Test < 0.5% Duty cycle 200 4 Gate Charge Transfer Characteristics 250 Ic, Collector Current (A) 30 40 30 20 10 0 25 50 75 100 125 TJ, Junction Temperature (°C) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 4–6 APTGF50A120T1G – Rev 0 0 VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle 0 0 Collector to Emitter Breakdown Voltage (Normalized) Output Characteristics (VGE=10V) 40 Ic, Collector Current (A) Ic, Collector Current (A) 160 APTGF50A120T1G Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 45 VCE = 600V RG = 5Ω 40 VGE = 15V 35 30 25 0 25 50 75 100 400 VGE=15V, TJ=125°C 350 300 VGE=15V, TJ=25°C 250 VCE = 600V RG = 5Ω 200 125 0 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 50 75 100 125 Current Fall Time vs Collector Current 50 180 VCE = 600V RG = 5Ω 140 tf, Fall Time (ns) tr, Rise Time (ns) 25 ICE, Collector to Emitter Current (A) 100 VGE=15V 60 TJ = 125°C 40 30 TJ = 25°C VCE = 600V, VGE = 15V, RG = 5Ω 20 20 125 TJ=125°C, VGE=15V 20 16 12 TJ=25°C, VGE=15V 8 4 0 25 50 75 100 ICE, Collector to Emitter Current (A) 12 Eon, 50A 10 Eoff, 50A 8 6 Eon, 25A 4 2 6 Eoff, 25A 0 TJ = 125°C 4 TJ = 25°C 2 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125 Switching Energy Losses vs Junction Temp. 8 Switching Energy Losses (mJ) 14 VCE = 600V VGE = 15V RG = 5Ω 0 Switching Energy Losses vs Gate Resistance 18 16 8 125 VCE = 600V VGE = 15V TJ= 125°C 125 VCE = 600V VGE = 15V RG = 5Ω 6 Eon, 50A August, 2007 VCE = 600V RG = 5Ω 24 25 50 75 100 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current Turn-On Energy Loss vs Collector Current 28 0 Switching Energy Losses (mJ) 0 4 Eoff, 50A Eon, 25A 2 Eoff, 25A 0 0 10 20 30 40 Gate Resistance (Ohms) 50 www.microsemi.com 25 50 75 100 TJ, Junction Temperature (°C) 125 5–6 APTGF50A120T1G – Rev 0 25 50 75 100 ICE, Collector to Emitter Current (A) Eoff, Turn-off Energy Loss (mJ) Eon, Turn-On Energy Loss (mJ) 0 APTGF50A120T1G Cies 1000 Coes 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 80 60 40 20 0 50 0 400 800 1200 VCE, Collector to Emitter Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.45 0.4 100 Cres 100 Thermal Impedance (°C/W) Reverse Bias Safe Operating Area 120 IC, Collector Current (A) C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage 10000 0.9 0.35 0.3 0.25 0.7 0.5 0.2 0.3 0.15 0.1 0.05 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Fmax, Operating Frequency (kHz) Rectangular Pulse Duration (Seconds) Operating Frequency vs Collector Current 120 100 80 ZVS VCE = 600V D = 50% RG = 5Ω TJ = 125°C TC= 75°C 60 ZCS 40 20 Hard switching 0 20 30 40 50 IC, Collector Current (A) 60 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTGF50A120T1G – Rev 0 August, 2007 10