APTGF50X120E2 APTGF50X120P2 3 Phase bridge NPT IGBT Power Module VCES = 1200V IC = 50A @ Tc = 80°C Application • AC Motor control Features Non Punch Through (NPT) IGBT® - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration • Pin out: APTGF50X120E2 (Long pins) N- U V W P+ • • • 1 2 3 4 5 6 7 8 9 10 11 12 Benefits • • • • • • • Pin out: APTGF50X120P2 (Short pins) N- 1 2 U 3 4 V 5 6 W 7 8 9 10 P+ Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile 11 12 Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation SCSOA Short Circuit Safe Operating Area TC = 25°C Max ratings 1200 72 50 140 ±20 350 Tj = 125°C 500A@1200V TC = 25°C TC = 80°C TC = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-4 APTGF50X120E2(P2) – Rev 0 Absolute maximum ratings November, 2003 All ratings @ Tj = 25°C unless otherwise specified APTGF50X120E2 APTGF50X120P2 ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Reverse diode ratings and characteristics Symbol Characteristic VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions VGE = 0V, IC = 500µA Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C Tj = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V TJ TSTG TC Torque Wt RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque To Heatsink Package Weight 1 Unit V mA Typ 3300 500 220 44 Max Unit 56 100 380 70 500 100 Tj = 25°C Tj = 125°C Typ 2.3 1.8 Max 2.8 Tj = 125°C 0.2 Tj = 25°C 2.8 Tj = 125°C 8 4.5 Min Min Symbol Characteristic VISOL 0.8 4 2.5 3.1 5.5 1200 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A RG = 22Ω Junction to Case Max V nA Test Conditions VGE = 0V VCE = 25V f = 1MHz Test Conditions IF = 50A VGE = 0V IF = 50A VR = 600V di/dt =800A/µs IF = 50A VR = 600V di/dt =800A/µs Typ 3.0 3.7 6.5 200 Thermal and package characteristics RthJC Min Min IGBT Diode Typ pF 100 M5 APT website – http://www.advancedpower.com ns Unit V µs µC Max 0.35 0.7 2500 -40 -40 -40 2 V Unit °C/W V 150 125 125 3.5 185 °C November, 2003 Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage N.m g 2-4 APTGF50X120E2(P2) – Rev 0 Electrical Characteristics APTGF50X120E2 APTGF50X120P2 Package outline Pin out: APTGF50X120E2 (Long pins) ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : APT website – http://www.advancedpower.com 3-4 APTGF50X120E2(P2) – Rev 0 November, 2003 1 APTGF50X120E2 APTGF50X120P2 Package outline ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 4-4 APTGF50X120E2(P2) – Rev 0 November, 2003 Pin out: APTGF50X120P2 (Short pins)