APTGF90DU60T Dual common source NPT IGBT Power Module VCES = 600V IC = 90A @ Tc = 80°C Application · AC Switches · Switched Mode Power Supplies · Uninterruptible Power Supplies C1 Features C2 · Q1 Q2 G1 G2 E1 E2 E NTC1 NTC2 · · G2 C2 E2 C1 C2 E E1 E2 NTC2 G1 G2 NTC1 Non Punch Through (NPT) THUNDERBOLT IGBT® - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration · · Benefits · Outstanding performance at high frequency operation · Stable temperature behavior · Very rugged · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Solderable terminals both for power and signal for easy PCB mounting · Easy paralleling due to positive TC of VCEsat · Low profile Absolute maximum ratings IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Max ratings 600 110 90 315 ±20 416 315A @ 600V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTGF90DU60T – Rev 1 March, 2004 Symbol VCES APTGF90DU60T All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, IC = 100µA Tj = 25°C VGE = 0V VCE = 600V Tj = 125°C Tj = 25°C VGE =15V IC = 90A Tj = 125°C VGE = VCE, IC = 1mA VGE = 20 V, VCE = 0V Min 600 Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Typ 2.0 2.2 3 Max 100 1000 2.5 Unit V µA V 5 ±150 V nA Max Unit Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Eon Eoff Td(on) Tr Td(off) Tf Eon Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Eoff Turn-off Switching Energy v VGS = 15V VBus = 300V IC = 90A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 90A RG = 5 W Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 90A RG = 5 W Typ 4300 470 400 330 290 200 26 25 150 30 3.35 2.85 26 25 170 40 4.3 pF nC ns mJ ns mJ 3.5 Reverse diode ratings and characteristics VF Reverse Recovery Time Qrr Reverse Recovery Charge 50% duty cycle IF = 60A IF = 120A IF = 60A IF = 60A VR = 400V di/dt =400A/µs IF = 60A VR = 400V di/dt =400A/µs Diode Forward Voltage trr Test Conditions Min Tj = 125°C Typ 60 1.6 1.9 1.4 Tj = 25°C 85 Tj = 125°C 160 Tj = 25°C 260 Tj = 125°C 1400 Tc = 70°C Max Unit A 1.8 V ns nC u Eon includes diode reverse recovery v In accordance with JEDEC standard JESD24-1 APT website – http://www.advancedpower.com 2-6 APTGF90DU60T – Rev 1 March, 2004 Symbol Characteristic Maximum Average Forward Current IF(AV) APTGF90DU60T Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque To Heatsink Package Weight Max 0.3 0.65 2500 Unit °C/W V -40 -40 -40 150 125 100 4.7 160 M5 °C N.m g Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K RT = Min Typ 68 4080 Max Unit kW K R25 T: Thermistor temperature é æ 1 1 öù RT: Thermistor value at T expê B25 / 85 çç - ÷÷ú è T25 T øû ë APT website – http://www.advancedpower.com 3-6 APTGF90DU60T – Rev 1 March, 2004 Package outline APTGF90DU60T Typical Performance Curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 300 Tc=-55°C 250µs Pulse Test < 0.5% Duty cycle 300 250 Ic, Collector Current (A) Tc=25°C 200 150 Tc=125°C 100 50 250µs Pulse Test < 0.5% Duty cycle 250 200 Tc=25°C 150 100 Tc=125°C 50 0 0 0 1 2 3 VCE, Collector to Emitter Voltage (V) 0 4 1 VGE, Gate to Emitter Voltage (V) 200 150 100 TJ=25°C 50 TJ=125°C TJ=-55°C 0 VCE, Collector to Emitter Voltage (V) 0 1 2 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. 8 TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle 7 6 Ic=180A 5 4 3 Ic=90A 2 Ic=45A 1 0 6 8 10 12 14 VGE, Gate to Emitter Voltage (V) IC = 90A TJ = 25°C 16 14 4 VCE=120V VCE=300V 12 10 VCE=480V 8 6 4 2 0 0 10 VCE, Collector to Emitter Voltage (V) Ic, Collector Current (A) 250µs Pulse Test < 0.5% Duty cycle 3 Gate Charge 18 250 2 VCE, Collector to Emitter Voltage (V) Transfer Characteristics 300 50 100 150 200 250 Gate Charge (nC) 300 350 On state Voltage vs Junction Temperature 4 3.5 Ic=180A 3 2.5 Ic=90A 2 1.5 Ic=45A 1 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 0.5 0 16 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) Breakdown Voltage vs Junction Temp. DC Collector Current vs Case Temperature 160 1.20 Ic, DC Collector Current (A) Collector to Emitter Breakdown Voltage (Normalized) Tc=-55°C 1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 4-6 APTGF90DU60T – Rev 1 March, 2004 Ic, Collector Current (A) 350 APTGF90DU60T Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) 30 VGE = 15V 25 Tj = 25°C VCE = 400V RG = 5Ω 20 15 25 50 75 100 125 ICE, Collector to Emitter Current (A) 250 200 VGE=15V, TJ=125°C 150 100 50 150 25 Current Rise Time vs Collector Current 100 125 150 Current Fall Time vs Collector Current VCE = 400V RG = 5Ω 60 VCE = 400V, VGE = 15V, RG = 5Ω tf, Fall Time (ns) tr, Rise Time (ns) 75 80 VGE=15V, TJ=125°C 40 20 0 60 TJ = 125°C 40 20 TJ = 25°C 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150 25 Eoff, Turn-off Energy Loss (mJ) VCE = 400V RG = 5Ω TJ=125°C, VGE=15V 4 TJ=25°C, VGE=15V 2 0 0 25 50 75 100 125 4 Eoff, 90A 8 Eon, 90A Eoff, 45A 4 Eon, 45A 0 0 10 20 30 40 Gate Resistance (Ohms) 50 TJ = 25°C 3 2 1 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150 Switching Energy Losses vs Junction Temp. 10 Switching Energy Losses (mJ) 12 Eoff, 180A TJ = 125°C 0 150 Switching Energy Losses vs Gate Resistance 16 Eon, 180A VCE = 400V VGE = 15V RG = 5Ω 5 ICE, Collector to Emitter Current (A) VCE = 400V VGE = 15V TJ = 125°C 150 6 8 6 50 75 100 125 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current Turn-On Energy Loss vs Collector Current Eon, Turn-On Energy Loss (mJ) 50 ICE, Collector to Emitter Current (A) 80 Switching Energy Losses (mJ) VGE=15V, TJ=25°C VCE = 400V RG = 5Ω VCE = 400V VGE = 15V RG = 5Ω 8 Eon, 180A Eoff, 180A 6 Eon, 90A 4 Eoff, 90A 2 Eoff, 45A Eon, 45A 0 0 25 50 75 100 TJ, Junction Temperature (°C) APT website – http://www.advancedpower.com 125 5-6 APTGF90DU60T – Rev 1 March, 2004 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 35 APTGF90DU60T Capacitance vs Collector to Emitter Voltage Minimum Switching Safe Operating Area 10000 350 IC, Collector Current (A) C, Capacitance (pF) Cies 1000 Coes Cres 300 250 200 150 100 50 0 100 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 0 50 200 400 600 800 VCE, Collector to Emitter Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.25 0.9 0.7 0.2 0.1 0.5 0.3 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 120 1 10 Operating Frequency vs Collector Current VCE = 400V D = 50% RG = 5Ω TJ = 125°C 100 80 60 40 20 0 20 40 60 80 100 IC, Collector Current (A) 120 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6 APTGF90DU60T – Rev 1 March, 2004 0.15 Fmax, Operating Frequency (kHz) Thermal Impedance (°C/W) 0.35