APTGS25X120RTP2 APTGS25X120BTP2 Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module VCES = 1200V IC = 25A @ Tc = 80°C Application • AC Motor control Features Non Punch Through (NPT) Low Loss IGBT® - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Very low stray inductance High level of integration Internal thermistor for temperature monitoring • • • • APTGS25X120RTP2: Without Brake (Pin 7 & 14 not connected) 20 19 Benefits • • • • • • • • 14 13 12 11 10 18 17 16 15 21 22 9 8 23 7 24 1 2 3 4 5 Low conduction losses Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile 6 Symbol VRRM ID IFSM Parameter Repetitive Peak Reverse Voltage DC Forward Current Surge Forward Current tp = 10ms TC = 80°C Tj = 25°C Tj = 150°C Max ratings 1600 25 300 230 Unit V A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-4 APTGS25X120BTP2 – Rev 0 1. Absolute maximum ratings Diode rectifier Absolute maximum ratings July, 2003 All ratings @ Tj = 25°C unless otherwise specified APTGS25X120RTP2 APTGS25X120BTP2 Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD IF Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation DC Forward Current IGBT & Diode Inverter Symbol VCES IC ICM VGE PD SCSOA IF IFSM TC = 25°C TC = 80°C TC = 25°C TC = 25°C TC = 80°C Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Short circuit Safe Operating Area DC Forward Current Surge Forward Current 2. Electrical Characteristics Diodes Rectifier Electrical Characteristics Symbol Characteristic IR Reverse Current VF Forward Voltage RthJC Junction to Case tp = 1ms TC = 25°C Tj = 125°C TC = 80°C TC = 80°C Test Conditions VR = 1600V Tj = 150°C Tj = 25°C IF = 30A Tj = 150°C IF = 25A IGBT Brake & Diode (only for APTGS25X120BTP2) Electrical Characteristics Symbol Characteristic ICES Test Conditions Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Cies Input Capacitance VF Forward Voltage RthJC Junction to Case VGE = 0V VCE = 1200V Max ratings 1200 20 12.5 25 ±20 100 25 Unit V Max ratings 1200 45 25 50 ±20 230 160A @ 720V 25 50 Unit V Min 2 1.3 1.05 Min Tj = 25°C Tj = 125°C Tj = 25°C VGE =15V IC = 12.5A Tj = 125°C VGE = VCE , IC = 0.35 mA VGE = 20V, VCE = 0V VGE = 0V, VCE = 25V f = 1MHz VGE = 0V Tj = 25°C IF = 25A Tj = 125°C IGBT Diode APT website – http://www.advancedpower.com Typ Max V W A A V W A Unit mA 1.5 1.1 1 °C/W Typ Max Unit 0.5 500 µA 0.8 4.5 A 2.7 3.1 5.5 mA 3.15 6.5 300 600 2.05 1.9 V V V nA July, 2003 Symbol VCES pF 2.4 1.2 1.2 V °C/W 2-4 APTGS25X120BTP2 – Rev 0 IGBT & Diode Brake (only for APTGS25X120BTP2) Absolute maximum ratings APTGS25X120RTP2 APTGS25X120BTP2 IGBT & Diode Inverter Electrical Characteristics Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Cies Input Capacitance Td(on) Tr Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Td(off) Tf Eoff Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn off Energy VF Forward Voltage Qrr Reverse Recovery Charge RthJC VGE = 0V IF = 25A IF = 25A VR = 600V di/dt=800A/µs Min Typ Max 1.5 2 2.1 2.45 5.5 500 1200 4.5 RT = R25 exp B25 / 50 1 1 − T25 T V nA ns 290 60 45 45 340 80 3.2 2.05 1.9 ns mJ 2.5 2.1 Tj = 125°C Symbol Characteristic R25 Resistance @ 25°C B 25/50 T25 = 298.16 K V pF 45 45 Tj = 25°C Tj = 125°C Tj = 25°C Temperature sensor NTC 6.5 300 1500 V µC 4.5 IGBT Diode Junction to Case 2.55 Unit V µA mA 0.55 1.2 °C/W Min Typ 5 3375 Max Unit kΩ K Min Typ Max Unit T: Thermistor temperature RT: Thermistor value at T 3. Thermal and package characteristics Symbol Characteristic RMS Isolation Voltage, any terminal to case t =1 min, VISOL I isol<1mA, 50/60Hz TJ Operating junction temperature range TSTG Storage Temperature Range TC Operating Case Temperature To Heatsink Torque Mounting torque Wt Package Weight 2500 M5 APT website – http://www.advancedpower.com -40 -40 -40 V 150 125 125 3.3 185 July, 2003 ICES Test Conditions VGE = 0V, IC = 500µA Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C Tj = 25°C VGE =15V IC = 25A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 25A RG = 27Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 25A RG = 27Ω °C N.m g 3-4 APTGS25X120BTP2 – Rev 0 Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage APTGS25X120RTP2 APTGS25X120BTP2 4. Package outline PIN 1 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 4-4 APTGS25X120BTP2 – Rev 0 July, 2003 PIN 24