APTGT100DH60T3G Asymmetrical - Bridge Trench + Field Stop IGBT Power Module 13 14 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Q1 CR1 CR3 18 22 7 19 23 8 Q4 CR2 CR4 4 3 29 30 31 15 32 16 R1 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 VCES = 600V IC = 100A* @ Tc = 80°C 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Features • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Absolute maximum ratings Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C Reverse Bias Safe Operating Area Tj = 150°C 200A @ 550V TC = 25°C TC = 80°C TC = 25°C Unit V A April, 2009 IC Max ratings 600 150 * 100 * 200 ±20 340 RBSOA Parameter Collector - Emitter Breakdown Voltage V W * Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater than 30°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–5 APTGT100DH60T3G – Rev 0 Symbol VCES APTGT100DH60T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Test Conditions Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 100A Tj = 150°C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V Min Typ 5.0 1.5 1.7 5.8 Max Unit 250 1.9 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=±15V, IC=100A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 100A RG = 3.3Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 100A RG = 3.3Ω VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 100A Tj = 25°C RG = 3.3Ω Tj = 150°C Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy Isc Short Circuit data Min Typ 6100 390 190 pF 1.1 µC 115 45 225 ns 55 130 50 ns 300 70 0.4 0.875 2.5 3.5 VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C mJ mJ 500 A Diode ratings and characteristics (CR2 & CR3) Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy VR=600V IF = 100A VGE = 0V IF = 100A VR = 300V di/dt =2000A/µs Min 600 Typ Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 100 1.6 1.5 125 220 4.7 Tj = 150°C Tj = 25°C 9.9 1.1 Tj = 150°C 2.4 Max 250 500 Unit V µA A 2 V April, 2009 IRM Test Conditions ns µC mJ CR1 & CR4 are IGBT protection diodes only www.microsemi.com 2–5 APTGT100DH60T3G – Rev 0 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT100DH60T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ IGBT Diode To heatsink M4 2500 -40 -40 -40 2.5 Max 0.44 0.77 Unit °C/W V 175 125 100 4.7 110 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ T T ⎝ 25 ⎠⎦ ⎣ 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3–5 APTGT100DH60T3G – Rev 0 28 17 1 April, 2009 SP3 Package outline (dimensions in mm) APTGT100DH60T3G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 200 200 TJ=25°C 175 TJ=150°C 125 IC (A) IC (A) 150 TJ=125°C 150 100 75 50 25 25 0 0.5 1 1.5 VCE (V) VGE=9V 0 2 2.5 0 3 7 175 1 1.5 2 VCE (V) VCE = 300V VGE = 15V RG = 3.3Ω TJ = 150°C 6 TJ=25°C 150 5 E (mJ) 125 100 TJ=125°C 75 0.5 TJ=150°C TJ=25°C 4 Er 3 5 6 7 Eon 0 0 8 9 10 11 0 12 25 50 75 100 125 150 175 200 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 250 VCE = 300V VGE =15V IC = 100A TJ = 150°C 200 Eoff Eon IF (A) E (mJ) 3.5 Eoff 1 25 6 3 2 50 8 2.5 Energy losses vs Collector Current Transfert Characteristics 200 IC (A) VGE=15V 100 50 TJ=25°C VGE=13V 125 75 0 VGE=19V TJ = 150°C 175 4 150 100 2 Er VGE=15V TJ=150°C RG=3.3Ω 50 Eon 0 0 0 5 10 15 20 25 Gate Resistance (ohms) 30 0 100 200 300 400 VCE (V) 500 600 700 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration IGBT 0.9 April, 2009 0.4 0.7 0.3 0.5 0.2 0.1 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4–5 APTGT100DH60T3G – Rev 0 Thermal Impedance (°C/W) 0.5 APTGT100DH60T3G Forward Characteristic of diode 200 VCE=300V D=50% RG=3.3Ω TJ=150°C 100 ZCS 80 ZVS 60 175 150 125 Tc=85°C IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 100 TJ=125°C 75 40 50 Hard switching 20 TJ=150°C 25 TJ=25°C 0 0 0 25 50 75 IC (A) 100 125 0 150 0.4 0.8 1.2 1.6 VF (V) 2 2.4 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.9 Diode 0.7 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5–5 APTGT100DH60T3G – Rev 0 April, 2009 Rectangular Pulse Duration in Seconds