APTGT150A170 Phase leg Trench + Field Stop IGBT® Power Module VCES = 1700V IC = 150A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control VBUS Q1 G1 E1 OUT Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Q2 G2 E2 0/VBUS G1 VBUS 0/VBUS OUT E1 Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1700 250 150 300 ±20 890 Tj = 125°C 300A @ 1600V TC = 25°C TC = 80°C TC = 25°C Unit V A V W May, 2005 G2 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGT150A170 – Rev 0 E2 APTGT150A170 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Td(off) Tf Eon Eoff Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 150A Tj = 125°C VGE = VCE , IC = 3mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz 5.0 Min Inductive Switching (25°C) VGE = 15V VBus = 900V IC = 150A R G = 4.7Ω Inductive Switching (125°C) VGE = 15V VBus = 900V IC = 150A R G = 4.7Ω Test Conditions Typ 2.0 2.4 5.8 Typ 13.5 0.55 0.44 370 40 Max Unit 350 2.4 µA 6.5 600 V nA Max Unit nF ns 650 180 400 50 800 300 48 47 Min Typ ns mJ Max 1700 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current VR=1700V IF(A V) Maximum Average Forward Current 50% duty cycle VF Diode Forward Voltage IF = 150A trr Reverse Recovery Time IF = 150A VR = 900V Qrr Reverse Recovery Charge di/dt =1600A/µs Unit V Tj = 25°C Tj = 125°C 350 600 Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C 150 1.8 1.9 385 Tj = 125°C Tj = 25°C 490 40 Tj = 125°C 64 µA A 2.2 V ns µC May, 2005 IRM V APT website – http://www.advancedpower.com 2-5 APTGT150A170 – Rev 0 Symbol Cies Coes Cres Td(on) Tr Min APTGT150A170 Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 3400 -40 -40 -40 3 2 Typ Max 0.14 0.26 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g APT website – http://www.advancedpower.com 3-5 APTGT150A170 – Rev 0 May, 2005 Package outline (dimensions in mm) APTGT150A170 Typical Performance Curve Output Characteristics (V GE=15V) Output Characteristics 300 300 250 IC (A) IC (A) VGE=20V 200 200 T J=125°C 150 VGE =13V 150 VGE =15V 100 100 50 50 0 VGE=9V 0 0 1 2 VCE (V) 3 4 0 Transfert Characteristics TJ =25°C 250 80 E (mJ) TJ=125°C 150 3 VCE (V) 4 5 Eon Eoff 60 Er 40 100 T J=125°C 50 20 0 0 5 6 7 8 9 10 11 12 0 13 50 100 150 200 250 300 IC (A) V GE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 120 350 VCE = 900V VGE =15V IC = 150A TJ = 125°C 80 300 Eon 250 60 IC (A) 100 E (mJ) 2 VCE = 900V VGE = 15V RG = 4.7Ω TJ = 125°C 100 200 1 Energy losses vs Collector Current 120 300 IC (A) T J = 125°C 250 T J=25°C Eoff 40 Er 200 150 VGE=15V T J=125°C RG=4.7Ω 100 20 50 0 0 0 5 10 15 20 25 Gate Resistance (ohms) 0 30 400 800 1200 1600 2000 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.14 IGBT 0.9 0.12 0.08 0.06 0.7 May, 2005 0.1 0.5 0.3 0.04 0.1 0.05 0 0.00001 0.02 Single Pulse 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) APT website – http://www.advancedpower.com 1 10 4-5 APTGT150A170 – Rev 0 Thermal Impedance (°C/W) 0.16 APTGT150A170 Forward Characteristic of diode 300 VCE =900V D=50% RG=4.7Ω TJ=125°C TC=75°C 20 ZCS 15 250 TJ=25°C 200 IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 25 ZVS 10 150 TJ=125°C 100 5 hard switching TJ=125°C 50 0 0 0 40 80 120 160 200 240 0 0.5 1 IC (A) 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Thermal Impedance (°C/W) 0.3 Diode 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5-5 APTGT150A170 – Rev 0 May, 2005 rectangular Pulse Duration (Seconds)