ADPOW APTGT150DU170 Dual common source trench field stop igbt power module Datasheet

APTGT150DU170
Dual common source
Trench + Field Stop IGBT®
Power Module
C2
Q2
G2
E1
E2
E
G1
C1
E
C2
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
E1
E2
G2
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
1700
250
150
300
±20
890
Tj = 125°C
300A @ 1600V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
V
W
May, 2005
Q1
G1
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
APTGT150DU170 – Rev 0
C1
VCES = 1700V
IC = 150A @ Tc = 80°C
APTGT150DU170
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Diode ratings and characteristics
Symbol Characteristic
VRRM
VGE = 0V, VCE = 1700V
Tj = 25°C
VGE = 15V
IC = 150A
Tj = 125°C
VGE = VCE , IC = 3mA
VGE = 20V, VCE = 0V
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
5.0
Min
Inductive Switching (25°C)
VGE = 15V
VBus = 900V
IC = 150A
R G = 4.7Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 900V
IC = 150A
R G = 4.7Ω
Test Conditions
Typ
2.0
2.4
5.8
Typ
13.5
0.55
0.44
370
40
Max
Unit
350
2.4
µA
6.5
600
V
nA
Max
Unit
nF
ns
650
180
400
50
800
300
48
47
Min
Typ
ns
mJ
Max
1700
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=1700V
IF(A V)
Maximum Average Forward Current
50% duty cycle
VF
Diode Forward Voltage
IF = 150A
trr
Reverse Recovery Time
IF = 150A
VR = 900V
Qrr
Reverse Recovery Charge
di/dt =1600A/µs
Unit
V
Tj = 25°C
Tj = 125°C
350
600
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
150
1.8
1.9
385
Tj = 125°C
Tj = 25°C
490
40
Tj = 125°C
64
µA
A
2.2
V
ns
µC
May, 2005
IRM
V
APT website – http://www.advancedpower.com
2-5
APTGT150DU170 – Rev 0
Symbol
Cies
Coes
Cres
Td(on)
Tr
Min
APTGT150DU170
Thermal and package characteristics
Symbol Characteristic
Min
IGBT
Diode
RthJC
Junction to Case
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
To heatsink
For terminals
M6
M5
3400
-40
-40
-40
3
2
Typ
Max
0.14
0.26
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
APT website – http://www.advancedpower.com
3-5
APTGT150DU170 – Rev 0
May, 2005
Package outline (dimensions in mm)
APTGT150DU170
Typical Performance Curve
Output Characteristics (V GE=15V)
Output Characteristics
300
300
250
IC (A)
IC (A)
VGE=20V
200
200
T J=125°C
150
VGE =13V
150
VGE =15V
100
100
50
50
0
VGE=9V
0
0
1
2
VCE (V)
3
4
0
Transfert Characteristics
TJ =25°C
250
80
E (mJ)
TJ=125°C
150
3
VCE (V)
4
5
Eon
Eoff
60
Er
40
100
T J=125°C
50
20
0
0
5
6
7
8
9
10
11
12
0
13
50
100
150
200
250
300
IC (A)
V GE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
120
350
VCE = 900V
VGE =15V
IC = 150A
TJ = 125°C
80
300
Eon
250
60
IC (A)
100
E (mJ)
2
VCE = 900V
VGE = 15V
RG = 4.7Ω
TJ = 125°C
100
200
1
Energy losses vs Collector Current
120
300
IC (A)
T J = 125°C
250
T J=25°C
Eoff
40
Er
200
150
VGE=15V
T J=125°C
RG=4.7Ω
100
20
50
0
0
0
5
10
15
20
25
Gate Resistance (ohms)
0
30
400
800
1200
1600
2000
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.14
IGBT
0.9
0.12
0.08
0.06
0.7
May, 2005
0.1
0.5
0.3
0.04
0.1
0.05
0
0.00001
0.02
Single Pulse
0.0001
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
APT website – http://www.advancedpower.com
1
10
4-5
APTGT150DU170 – Rev 0
Thermal Impedance (°C/W)
0.16
APTGT150DU170
Forward Characteristic of diode
300
VCE =900V
D=50%
RG=4.7Ω
TJ=125°C
TC=75°C
20
ZCS
15
250
TJ=25°C
200
IC (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
25
ZVS
10
150
TJ=125°C
100
5
hard
switching
TJ=125°C
50
0
0
0
40
80
120
160
200
240
0
0.5
1
IC (A)
1.5
VF (V)
2
2.5
3
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
Thermal Impedance (°C/W)
0.3
Diode
0.25
0.9
0.2
0.7
0.15
0.5
0.1
0.3
0.05
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
5-5
APTGT150DU170 – Rev 0
May, 2005
rectangular Pulse Duration (Seconds)
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