APTGT200DH120 Asymmetrical - Bridge Fast Trench + Field Stop IGBT® Power Module Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives VBUS Q1 CR3 Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration OUT1 OUT2 Q4 G4 CR2 E4 0/VBUS OUT1 G1 VBUS 0/VBUS E1 E4 G4 OUT2 Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1200 280 200 400 ±20 890 Tj = 125°C 400A @ 1100V TC = 25°C TC = 80°C TC = 25°C Unit V A V W May, 2005 E1 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGT200DH120 – Rev 0 G1 VCES = 1200V IC = 200A @ Tc = 80°C APTGT200DH120 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Tf Eon Eoff Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 200A Tj = 125°C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz 1.4 5.0 Min Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7Ω Test Conditions Maximum Reverse Leakage Current VR=1200V IF(A V) Maximum Average Forward Current 50% duty cycle VF Diode Forward Voltage IF = 200A VGE = 0V trr Reverse Recovery Time IF = 200A VR = 600V Qrr Reverse Recovery Charge di/dt =2500A/µs 1.7 2.0 5.8 Typ 14 0.8 0.6 260 30 420 Max Unit 350 2.1 µA 6.5 500 V nA Max Unit V nF ns 70 290 50 ns 520 90 20 20 Min 1200 Typ Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C 200 1.6 1.6 Tj = 25°C 170 Tj = 125°C Tj = 25°C Tj = 125°C 280 18 36 mJ Max 350 600 Unit V µA A 2.1 V ns µC May, 2005 IRM Typ APT website – http://www.advancedpower.com 2-5 APTGT200DH120 – Rev 0 Symbol Cies Coes Cres Td(on) Tr Td(off) Min APTGT200DH120 Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.14 0.25 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g APT website – http://www.advancedpower.com 3-5 APTGT200DH120 – Rev 0 May, 2005 Package outline (dimensions in mm) APTGT200DH120 Typical Performance Curve Output Characteristics (VGE =15V) 400 VGE =17V 300 TJ=125°C IC (A) IC (A) TJ = 125°C TJ=25°C 300 Output Characteristics 400 200 V GE=13V VGE =15V 200 VGE =9V 100 100 0 0 0 1 2 V CE (V) 3 4 0 Transfert Characteristics 350 T J=25°C TJ=125°C E (mJ) IC (A) 250 200 150 100 VCE = 600V VGE = 15V RG = 2.7Ω T J = 125°C 40 300 T J=125°C 2 V CE (V) 3 4 Energy losses vs Collector Current 50 400 1 30 Eon Eoff Er 20 Eon 10 50 0 0 5 6 7 8 9 10 11 0 12 50 100 150 200 250 300 350 400 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 50 450 VCE = 600V V GE =15V IC = 200A T J = 125°C 30 Eon 400 350 300 IC (A) E (mJ) 40 Eoff 20 Er 250 200 150 VGE=15V T J=125°C RG=2.7 Ω 100 10 50 0 0 0 4 8 12 16 Gate Resistance (ohms) 20 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.12 0.1 0.7 0.08 0.5 0.06 0.3 0.04 0.02 IGBT 0.9 May, 2005 0.14 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) APT website – http://www.advancedpower.com 1 10 4-5 APTGT200DH120 – Rev 0 Thermal Impedance (°C/W) 0.16 APTGT200DH120 Forward Characteristic of diode 400 V CE=600V D=50% RG=2.7Ω TJ=125°C Tc=75°C 50 ZCS 40 ZVS TJ =25°C 350 300 250 IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 60 30 TJ=125°C 200 150 20 100 Hard switching 10 TJ=125°C 50 TJ=25°C 0 0 0 40 80 120 160 200 240 0 280 0.4 0.8 IC (A) 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Thermal Impedance (°C/W) 0.3 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 0.1 0.05 0 0.00001 Diode Single Pulse 0.0001 0.001 0.01 0.1 1 10 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5-5 APTGT200DH120 – Rev 0 May, 2005 rectangular Pulse Duration (Seconds)