ADPOW APTGT200H120 Full - bridge fast trench field stop igbt power module Datasheet

APTGT200H120
VCES = 1200V
IC = 200A @ Tc = 80°C
Full - Bridge
Fast Trench + Field Stop IGBT®
Power Module
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
VBUS
Q3
G3
Q2
Features
• Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
E3
OUT1 OUT2
Q4
G2
G4
E2
E4
0/VBUS
OUT1
G1
VBUS
G2
0/VBUS
E1
E2
E3
E4
G3
G4
OUT2
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
1200
280
200
400
±20
890
Tj = 125°C
400A @ 1100V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
May, 2005
E1
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
APTGT200H120 – Rev 0
Q1
G1
APTGT200H120
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Turn-on Delay Time
Rise Time
Td(off)
Tf
Eon
Eoff
Turn-off Delay Time
Fall Time
Turn on Energy
Turn off Energy
Reverse diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE =15V
IC = 200A
Tj = 125°C
VGE = VCE , IC = 3 mA
VGE = 20V, VCE = 0V
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
1.4
5.0
Min
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 200A
R G = 2.7Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 200A
R G = 2.7Ω
Test Conditions
Maximum Reverse Leakage Current
VR=1200V
IF(A V)
Maximum Average Forward Current
50% duty cycle
VF
Diode Forward Voltage
IF = 200A
VGE = 0V
trr
Reverse Recovery Time
IF = 200A
VR = 600V
Qrr
Reverse Recovery Charge
di/dt =2500A/µs
1.7
2.0
5.8
Typ
14
0.8
0.6
260
30
420
Max
Unit
350
2.1
µA
6.5
500
V
nA
Max
Unit
V
nF
ns
70
290
50
ns
520
90
20
20
Min
1200
Typ
Tj = 25°C
Tj = 125°C
Tc = 80°C
Tj = 25°C
Tj = 125°C
200
1.6
1.6
Tj = 25°C
170
Tj = 125°C
Tj = 25°C
Tj = 125°C
280
18
36
mJ
Max
350
600
Unit
V
µA
A
2.1
V
ns
µC
May, 2005
IRM
Typ
APT website – http://www.advancedpower.com
2-5
APTGT200H120 – Rev 0
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Min
APTGT200H120
Thermal and package characteristics
Symbol Characteristic
Min
IGBT
Diode
RthJC
Junction to Case
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
To heatsink
For terminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
0.14
0.25
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
APT website – http://www.advancedpower.com
3-5
APTGT200H120 – Rev 0
May, 2005
Package outline (dimensions in mm)
APTGT200H120
Typical Performance Curve
Output Characteristics (VGE =15V)
400
VGE =17V
300
TJ=125°C
IC (A)
IC (A)
TJ = 125°C
TJ=25°C
300
Output Characteristics
400
200
V GE=13V
VGE =15V
200
VGE =9V
100
100
0
0
0
1
2
V CE (V)
3
4
0
Transfert Characteristics
350
T J=25°C
TJ=125°C
E (mJ)
IC (A)
250
200
150
100
VCE = 600V
VGE = 15V
RG = 2.7Ω
T J = 125°C
40
300
T J=125°C
2
V CE (V)
3
4
Energy losses vs Collector Current
50
400
1
30
Eon
Eoff
Er
20
Eon
10
50
0
0
5
6
7
8
9
10
11
0
12
50
100 150 200 250 300 350 400
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
50
450
VCE = 600V
V GE =15V
IC = 200A
T J = 125°C
30
Eon
400
350
300
IC (A)
E (mJ)
40
Eoff
20
Er
250
200
150
VGE=15V
T J=125°C
RG=2.7 Ω
100
10
50
0
0
0
4
8
12
16
Gate Resistance (ohms)
20
0
300
600
900
VCE (V)
1200
1500
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.12
0.1
0.7
0.08
0.5
0.06
0.3
0.04
0.02
IGBT
0.9
May, 2005
0.14
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
APT website – http://www.advancedpower.com
1
10
4-5
APTGT200H120 – Rev 0
Thermal Impedance (°C/W)
0.16
APTGT200H120
Forward Characteristic of diode
400
V CE=600V
D=50%
RG=2.7Ω
TJ=125°C
Tc=75°C
50
ZCS
40
ZVS
TJ =25°C
350
300
250
IC (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
60
30
TJ=125°C
200
150
20
100
Hard
switching
10
TJ=125°C
50
TJ=25°C
0
0
0
40
80
120
160
200
240
0
280
0.4
0.8
IC (A)
1.2
1.6
VF (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
Thermal Impedance (°C/W)
0.3
0.25
0.9
0.2
0.7
0.15
0.5
0.1
0.3
0.05
0.1
0.05
0
0.00001
Diode
Single Pulse
0.0001
0.001
0.01
0.1
1
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
5-5
APTGT200H120 – Rev 0
May, 2005
rectangular Pulse Duration (Seconds)
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