APTGT300A120 Phase leg Fast Trench + Field Stop IGBT® Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control VBUS Q1 G1 E1 OUT Q2 G2 E2 0/VBUS VBUS 0/VBUS Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration OUT E1 Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile G2 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1200 420 300 600 ±20 1380 Tj = 125°C 600A @ 1100V TC = 25°C TC = 80°C TC = 25°C Unit V A V W May, 2005 E2 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGT300A120 – Rev 0 G1 VCES = 1200V IC = 300A @ Tc = 80°C APTGT300A120 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Tf Eon Eoff Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 300A Tj = 125°C VGE = VCE , IC = 4 mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz 1.4 5.0 Min Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 300A R G = 1.8Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 300A R G = 1.8Ω Test Conditions Maximum Reverse Leakage Current VR=1200V IF(A V) Maximum Average Forward Current 50% duty cycle VF Diode Forward Voltage IF = 300A VGE = 0V trr Reverse Recovery Time IF = 300A VR = 600V Qrr Reverse Recovery Charge di/dt =3000A/µs 1.7 2.0 5.8 Typ 21 1.2 0.9 260 30 420 Max Unit 1 2.1 mA 6.5 600 V nA Max Unit V nF ns 70 290 50 ns 520 90 30 30 Min 1200 Typ Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C 300 1.6 1.6 Tj = 25°C 170 Tj = 125°C Tj = 25°C Tj = 125°C 280 27 54 mJ Max 500 750 Unit V µA A 2.1 V ns µC May, 2005 IRM Typ APT website – http://www.advancedpower.com 2-5 APTGT300A120 – Rev 0 Symbol Cies Coes Cres Td(on) Tr Td(off) Min APTGT300A120 Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.09 0.17 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g APT website – http://www.advancedpower.com 3-5 APTGT300A120 – Rev 0 May, 2005 Package outline (dimensions in mm) APTGT300A120 Typical Performance Curve Output Characteristics (VGE =15V) 600 V GE=17V TJ=125°C 300 VGE=15V 300 200 200 100 100 VGE =9V 0 0 1 2 VCE (V) 3 4 0 Transfert Characteristics 600 1 50 TJ=125°C E (mJ) 300 TJ=125°C 4 Eon Eoff Er 37.5 Eon 25 200 3 VCE = 600V VGE = 15V RG = 1.8Ω T J = 125°C 62.5 400 2 VCE (V) Energy losses vs Collector Current 75 TJ=25°C 500 12.5 100 0 0 5 6 7 8 9 V GE (V) 10 11 0 12 100 200 300 400 500 600 IC (A) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 70 700 VCE = 600V VGE =15V IC = 300A T J = 125°C 60 50 Eon 600 500 Eoff 40 30 IC (A) E (mJ) VGE =13V 400 400 0 IC (A) T J = 125°C 500 TJ=25°C IC (A) IC (A) 500 Output Characteristics 600 Er 400 300 20 200 10 100 0 VGE =15V T J=125°C RG=1.8 Ω 0 0 2 4 6 8 10 Gate Resistance (ohms) 12 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.08 0.9 IGBT 0.7 0.06 0.3 0.02 0.1 0.05 0 0.00001 May, 2005 0.5 0.04 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) APT website – http://www.advancedpower.com 4-5 APTGT300A120 – Rev 0 Thermal Impedance (°C/W) 0.1 APTGT300A120 Forward Characteristic of diode 600 50 ZCS 40 ZVS VCE=600V D=50% RG=1.8Ω TJ=125°C Tc=75°C TJ=25°C 500 400 IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 60 30 TJ=125°C 300 200 20 Hard switching 10 TJ =125°C 100 TJ =25°C 0 0 0 50 0 100 150 200 250 300 350 400 IC (A) 0.4 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Thermal Impedance (°C/W) 0.2 0.16 0.12 0.9 Diode 0.7 0.5 0.08 0.04 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5-5 APTGT300A120 – Rev 0 May, 2005 rectangular Pulse Duration (Seconds)