APTGT35H120T1G Full – Bridge Fast Trench + Field Stop IGBT® Power Module 3 4 Q3 Q1 CR1 CR3 2 5 6 1 Q4 Q2 CR2 CR4 7 9 8 11 10 NTC 12 VCES = 1200V IC = 35A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS Compliant Pins 3/4 must be shorted together Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C Max ratings 1200 55 35 70 ±20 208 Tj = 125°C 70A@1150V TC = 25°C TC = 80°C TC = 25°C Reverse Bias Safe Operating Area Unit V A August, 2007 Parameter Collector - Emitter Breakdown Voltage V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–5 APTGT35H120T1G – Rev 0 Symbol VCES APTGT35H120T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min Tj = 25°C Tj = 125°C Tj = 25°C VGE = 15V IC = 35A Tj = 125°C VGE = VCE , IC = 1.5mA VGE = 20V, VCE = 0V Typ VGE = 0V VCE = 1200V 5.0 1.7 2.0 5.8 Max 250 500 2.1 Unit µA V 6.5 400 V nA Max Unit Dynamic Characteristics Symbol Cies Cres Td(on) Tr Td(off) Tf Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 35A RG = 27Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 35A RG = 27Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 35A Tj = 125°C RG = 27Ω Min Test Conditions Min 1200 Typ 2.5 0.15 90 30 420 nF ns 70 90 50 ns 520 90 3.5 mJ 4.1 Reverse diode ratings and characteristics IF Maximum Reverse Leakage Current VR=1200V Tj = 25°C Tj = 125°C IF = 35A Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C 35 1.6 1.6 170 Tj = 125°C Tj = 25°C 280 3.5 Tj = 125°C Tj = 25°C Tj = 125°C 7 1.4 2.7 DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy IF = 35A VR = 600V di/dt =1500A/µs www.microsemi.com Max 250 500 Unit V µA A 2.1 V ns August, 2007 IRM Typ µC mJ 2–5 APTGT35H120T1G – Rev 0 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT35H120T1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ IGBT Diode To heatsink M4 2500 -40 -40 -40 2.5 Max 0.60 0.95 Unit °C/W V 150 125 100 4.7 80 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = Min Typ 50 3952 Max Unit kΩ K R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 − T25 T See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3–5 APTGT35H120T1G – Rev 0 August, 2007 SP1 Package outline (dimensions in mm) APTGT35H120T1G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 70 70 TJ=25°C 60 VGE=17V 50 TJ=125°C IC (A) IC (A) 50 40 30 VGE=15V 30 20 10 10 VGE=9V 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 0 3.5 8 70 6 E (mJ) 50 40 TJ=125°C 30 2 VCE (V) 3 4 Eon VCE = 600V VGE = 15V RG = 27Ω TJ = 125°C 7 TJ=25°C 60 1 Energy losses vs Collector Current Transfert Characteristics 80 5 Eoff Eon 4 Er 3 2 20 10 1 TJ=25°C 0 0 5 6 7 8 9 10 0 11 10 20 Switching Energy Losses vs Gate Resistance 8 6 5 50 60 70 80 Reverse Bias Safe Operating Area Eon 60 IC (A) Eoff 4 Eon 3 40 80 VCE = 600V VGE =15V IC = 35A TJ = 125°C 7 30 IC (A) VGE (V) E (mJ) VGE=13V 40 20 0 IC (A) TJ = 125°C 60 40 Er 2 VGE=15V TJ=125°C RG=27Ω 20 1 0 0 20 40 60 80 Gate Resistance (ohms) 100 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.4 0.3 IGBT 0.9 August, 2007 0.6 0.7 0.5 0.3 0.2 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4–5 APTGT35H120T1G – Rev 0 Thermal Impedance (°C/W) 0.7 APTGT35H120T1G Forward Characteristic of diode 70 70 60 50 ZCS 40 VCE=600V D=50% RG=27Ω TJ=125°C TC=75°C 60 50 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 80 ZVS 30 TJ=125°C 40 30 20 20 hard switching 10 TJ=125°C 10 TJ=25°C 0 0 0 10 20 30 40 50 0 60 0.5 IC (A) 1 1.5 VF (V) 2 2.5 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1 0.9 0.8 0.6 Diode 0.7 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5–5 APTGT35H120T1G – Rev 0 August, 2007 rectangular Pulse Duration (Seconds)