Microsemi APTGT400DA60D3G Boost chopper trench field stop igbt3 power module Datasheet

APTGT400DA60D3G
Boost chopper
Trench + Field Stop IGBT3
Power Module
3
Q2
1
6
7
2
VCES = 600V
IC = 400A @ Tc = 80°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Trench + Field Stop IGBT3 Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• High level of integration
• M6 power connectors
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
Absolute maximum ratings
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
600
500
400
800
±20
1250
Tj = 125°C
800A @ 520V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
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1-5
APTGT400DA60D3G – Rev 1 March, 2011
Symbol
VCES
APTGT400DA60D3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, VCE = 600V
Tj = 25°C
VGE = 15V
IC = 400A
Tj = 150°C
VGE = VCE , IC = 6.4 mA
VGE = 20V, VCE = 0V
Min
Typ
5.0
1.5
1.7
5.8
Max
Unit
500
1.9
µA
6.5
400
V
nA
Max
Unit
V
Dynamic Characteristics
Symbol
Cies
Coes
Cres
QG
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
Isc
Short Circuit data
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
VGE=±15V, IC=400A
VCE=300V
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 400A
RG = 1.5Ω
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 400A
RG = 1.5Ω
VGE = ±15V
Tj = 25°C
VBus = 300V
Tj = 150°C
IC = 400A
Tj = 25°C
RG = 1.5Ω
Tj = 150°C
VGE ≤15V ; VBus = 360V
tp ≤ 6µs ; Tj = 150°C
Typ
24
1.5
0.75
nF
4.2
µC
110
50
490
ns
50
130
60
ns
530
70
3.2
3.4
15
15.5
mJ
2000
A
Reverse diode ratings and characteristics
IRRM
IF
Maximum Reverse Leakage Current
Test Conditions
VR=600V
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 400A
VGE = 0V
IF = 400A
VR = 300V
di/dt =4800A/µs
Err
Reverse Recovery Energy
Min
600
Tj = 25°C
Tj = 150°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
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Typ
Max
500
750
400
1.6
1.5
125
180
18.8
39.5
4.4
9.6
Unit
V
µA
A
2
V
ns
µC
mJ
2-5
APTGT400DA60D3G – Rev 1 March, 2011
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APTGT400DA60D3G
Thermal and package characteristics
Symbol Characteristic
Min
IGBT
Diode
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
For terminals
To Heatsink
M6
M6
4000
-40
-40
-40
3
3
Typ
Max
0.12
0.20
Unit
°C/W
V
175
125
125
5
5
350
°C
N.m
g
D3 Package outline (dimensions in mm)
1°
A
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3-5
APTGT400DA60D3G – Rev 1 March, 2011
DÉTAIL A
APTGT400DA60D3G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
600
600
500
500
400
400
TJ=150°C
IC (A)
IC (A)
TJ = 150°C
300
VGE=13V
VGE=15V
300
VGE=9V
200
200
100
100
TJ=25°C
0
0
0
0.5
1
1.5
2
0
2.5
0.5
VCE (V)
35
TJ=25°C
25
E (mJ)
IC (A)
2.5
VCE = 300V
VGE = 15V
RG = 1.5Ω
TJ = 150°C
30
600
400
200
1.5
2
VCE (V)
3.5
Eoff
20
15
Err
10
TJ=150°C
5
Eon
0
0
5
6
7
8
9
10
0
11
200
Switching Energy Losses vs Gate Resistance
35
VCE = 300V
VGE =15V
IC = 400A
TJ = 150°C
30
25
400
600
800
IC (A)
VGE (V)
Reverse Bias Safe Operating Area
1000
Eon
800
Eoff
20
IC (A)
E (mJ)
3
Energy losses vs Collector Current
Transfert Characteristics
800
1
15
600
400
10
Err
5
VGE=15V
TJ=150°C
RG=1.5Ω
200
0
0
0
2.5
5
7.5
Gate Resistance (ohms)
10
0
100 200 300 400 500 600 700
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
0.1
0.08
0.06
0.04
0.02
IGBT
0.9
0.7
0.5
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
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4-5
APTGT400DA60D3G – Rev 1 March, 2011
Thermal Impedance (°C/W)
0.14
APTGT400DA60D3G
Forward Characteristic of diode
600
ZCS
60
VCE=300V
D=50%
RG=1.5Ω
TJ=150°C
500
400
Tc=85°C
ZVS
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
80
40
Hard
switching
20
300
200
TJ=150°C
100
TJ=25°C
0
0
0
100
200
300
IC (A)
400
0
500
0.4
0.8
1.2
1.6
VF (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.25
Diode
0.2
0.9
0.15
0.7
0.1
0.05
0.5
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
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5-5
APTGT400DA60D3G – Rev 1 March, 2011
Rectangular Pulse Duration in Seconds
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